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SYS81000RKXP-70

Description
SRAM Module, 1MX8, 70ns, CMOS, PSMA35, PLASTIC, MODULE, SIP-35
Categorystorage    storage   
File Size444KB,2 Pages
ManufacturerAPTA Group Inc
Download Datasheet Parametric View All

SYS81000RKXP-70 Overview

SRAM Module, 1MX8, 70ns, CMOS, PSMA35, PLASTIC, MODULE, SIP-35

SYS81000RKXP-70 Parametric

Parameter NameAttribute value
MakerAPTA Group Inc
Parts packaging codeSIP
package instruction,
Contacts35
Reach Compliance Codeunknown
ECCN code3A991.B.2.A
Maximum access time70 ns
JESD-30 codeR-PSMA-T35
memory density8388608 bit
Memory IC TypeSRAM MODULE
memory width8
Number of functions1
Number of terminals35
word count1048576 words
character code1000000
Operating modeASYNCHRONOUS
organize1MX8
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Parallel/SerialPARALLEL
Certification statusNot Qualified
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
TRAILING EDGE PRODUCT - MINIMUM ORDER APPLIES
1M x 8 SRAM MODULE
SYS81000RKX-70/85/10/12
Elm Road, West Chirton Industrial Estate, North Shields,
NE29 8SE, ENGLAND. TEL +44 191 2930519. FAX +44 191 2590997
Issue 1.2 : May 1996
Features
Access Times of 70/85/100/120 ns.
35 Pin Single-In-Line (SIL) package.
5 Volt Supply ± 10%.
Low Power Standby
-L Version
80uW (typ).
Low Power Operation
140mW (typ).
Completely Static Operation.
Equal Access and Cycle Times.
All Inputs and Outputs Directly TTL compatible
Low Voltage V
CC
Data Retention.
On-board decoding & capacitors.
Battery back-up capability.
Pin Definition
Vcc
A0
A1
A2
A3
D0
D1
A4
A5
A6
A7
A8
A13
D2
CS
A15
A16
A17
A9
GND
OE
A14
D3
D4
D5
WE
A10
A11
A12
D6
D7
GND
A18
A19
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
Description
The SYS81000RKX is plastic 8M Static RAM
Module housed in a 35 pin Single-In-Line package,
organised as 1M x 8.
The module utilises fast SRAMs housed in SOP
packages, and uses double sided surface mount
techniques on an FR4 epoxy substrate, to achieve
a very high density module.
The SYS81000RKX is offered in standard and low
power versions, with the -L module having a low
voltage data retention mode for battery backed
applications.
Block Diagram
A0 - A16
WE
OE
128K x 8
SRAM
CS
CS
CS
CS
A17
A18
A19
D0 - D7
DECODER
CS
CS
CS
128K x 8
SRAM
CS
CS
Pin Functions
Address Inputs
Data Input/Output
Chip Select
Write Enable
Output Enable
No Connect
Power (+5V)
Ground
A0 - A19
D0 - D7
CS
WE
OE
NC
V
CC
GND
Package Details
Plastic 35 Pin Single-in-line (SIL)

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