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SKN320/02

Description
Rectifier Diode, 1 Phase, 1 Element, 420A, 200V V(RRM), Silicon, HERMETIC SEALED, METAL, CASE E16, 1 PIN
CategoryDiscrete semiconductor    diode   
File Size149KB,4 Pages
ManufacturerSEMIKRON
Websitehttp://www.semikron.com
Environmental Compliance
Download Datasheet Parametric Compare View All

SKN320/02 Overview

Rectifier Diode, 1 Phase, 1 Element, 420A, 200V V(RRM), Silicon, HERMETIC SEALED, METAL, CASE E16, 1 PIN

SKN320/02 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSEMIKRON
package instructionO-MUPM-H1
Contacts1
Manufacturer packaging codeCASE E16
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLEAKAGE CURRENT IS TYPICAL
applicationPOWER
Shell connectionANODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.35 V
JESD-30 codeO-MUPM-H1
JESD-609 codee2
Maximum non-repetitive peak forward current9000 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature180 °C
Minimum operating temperature-40 °C
Maximum output current420 A
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage200 V
Maximum reverse current3000 µA
surface mountNO
Terminal surfaceTin/Silver (Sn/Ag)
Terminal formHIGH CURRENT CABLE
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED

SKN320/02 Preview

V
RSM
V
RRM
I
FRMS
(maximum values for continuous operation)
700 A
I
FAV
(sin. 180; T
case
= 100
°C)
420 A
400 A
Rectifier Diodes
SKN 320
SKN 400
SKR 320
V
200
400
800
1200
1400
1600
1800
2400
2700
3000
SKN 320/02
SKN 320/04
SKN 320/08
SKN 320/12
SKN 320/14
SKN 320/16
SKR 320/02
SKR 320/04
SKR 320/08
SKR 320/12
SKR 320/14
SKR 320/16
SKN 400/18
SKN 400/24
SKN 400/27
SKN 400/30
Symbol Conditions
I
FAV
sin. 180; T
case
= 87
°C
= 100
°C
= 125
°C
T
vj
= 25
°C;
10 ms
T
vj max.
; 10 ms
T
vj
= 25
°C;
8,3 ... 10 ms
T
vj max.
; 8,3 ... 10 ms
T
vj
= 160
°C;
SKN 320
SKR 320
420 A
320 A
9 000 A
8 000 A
400 000 A
2
s
300 000 A
2
s
typ. 300
µC
3 mA
100 mA
1,35 V (1000 A)
0,8 V
0,45 mΩ
0,16
°C/W
0,015
°C/W
– 40 ... + 180
°C
– 55 ... + 180
°C
SKN 400
450 A
400 A
9 000 A
7 500 A
400 000 A
2
s
280 000 A
2
s
typ. 400
µC
3 mA
60 mA
1,45 V (1200 A)
0,9 V
0,5 mΩ
0,11
°C/W
0,01
°C/W
– 40 ... + 160
°C
– 55 ... + 160
°C
I
FSM
i
2
t
Q
rr
I
R
V
F
V
(TO)
r
T
R
thjc
R
thch
T
vj
T
stg
M
a
w
RC
R
p
Case
di
F
A
= 10
dt
µ
s
T
vj
= 25
°C;V
R
= V
RRM
T
vj max.
;V
R
= V
RRM
T
vj
= 25
°C;
(I
F
= . . .); max.
T
vj max.
T
vj max.
Features
Reverse voltages up to 3000 V
Hermetic metal cases with
glass insulators; SKN 400
ceramic insulator with extra
long creepage distances
Threaded studs ISO M24 x 1,5
SKN:
anode to stud
SKR:
cathode to stud
Typical Applications
SKN/SKR 320: all-purpose high
power rectifier diodes
SKN 400: high voltage rectifier
diode, especially for traction
applications
Cooling via heatsinks
Non-controllable and
half-controllable rectifiers,
free-wheeling diodes
SI units/US units
approx.
P
R
= 2 W
P
R
= 20 W
60 Nm/530 lb. in.
5 . 9,81 m/s
2
500 g
1
µF
+ 20
25 kΩ
E 16
E 17
© by SEMIKRON
B 8 – 25
B 8 – 26
© by SEMIKRON
© by SEMIKRON
B 8 – 27
B 8 – 28
0895
© by SEMIKRON

SKN320/02 Related Products

SKN320/02 SKN400/30 SKN400/24
Description Rectifier Diode, 1 Phase, 1 Element, 420A, 200V V(RRM), Silicon, HERMETIC SEALED, METAL, CASE E16, 1 PIN Rectifier Diode, 1 Phase, 1 Element, 445A, 3000V V(RRM), Silicon, HERMETIC SEALED, METAL, CASE E 17, 1 PIN Rectifier Diode, 1 Phase, 1 Element, 445A, 2400V V(RRM), Silicon, HERMETIC SEALED, METAL, CASE E 17, 1 PIN
Is it Rohs certified? conform to conform to conform to
Maker SEMIKRON SEMIKRON SEMIKRON
package instruction O-MUPM-H1 O-MUPM-H1 HERMETIC SEALED, METAL, CASE E 17, 1 PIN
Contacts 1 1 1
Manufacturer packaging code CASE E16 CASE E 17 CASE E 17
Reach Compliance Code compliant compliant compli
ECCN code EAR99 EAR99 EAR99
Other features LEAKAGE CURRENT IS TYPICAL FREE WHEELING DIODE FREE WHEELING DIODE
application POWER HIGH VOLTAGE HIGH VOLTAGE
Shell connection ANODE ANODE ANODE
Configuration SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.35 V 1.45 V 1.45 V
JESD-30 code O-MUPM-H1 O-MUPM-H1 O-MUPM-H1
JESD-609 code e2 e2 e2
Maximum non-repetitive peak forward current 9000 A 7500 A 7500 A
Number of components 1 1 1
Phase 1 1 1
Number of terminals 1 1 1
Maximum operating temperature 180 °C 160 °C 160 °C
Minimum operating temperature -40 °C -40 °C -40 °C
Maximum output current 420 A 445 A 445 A
Package body material METAL METAL METAL
Package shape ROUND ROUND ROUND
Package form POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 200 V 3000 V 2400 V
Maximum reverse current 3000 µA 3000 µA 3000 µA
surface mount NO NO NO
Terminal surface Tin/Silver (Sn/Ag) Tin/Silver (Sn/Ag) Tin/Silver (Sn/Ag)
Terminal form HIGH CURRENT CABLE HIGH CURRENT CABLE HIGH CURRENT CABLE
Terminal location UPPER UPPER UPPER
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Is it lead-free? - Lead free Lead free

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Index Files: 1557  817  2101  2135  1960  32  17  43  40  23 
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