Cache SRAM, 16KX4, 13ns, CMOS, CDIP28, DIP-28
| Parameter Name | Attribute value |
| Maker | IDT (Integrated Device Technology) |
| Parts packaging code | DIP |
| package instruction | DIP, |
| Contacts | 28 |
| Reach Compliance Code | unknown |
| ECCN code | 3A001.A.2.C |
| Maximum access time | 13 ns |
| JESD-30 code | R-CDIP-T28 |
| JESD-609 code | e0 |
| memory density | 65536 bit |
| Memory IC Type | CACHE SRAM |
| memory width | 4 |
| Number of functions | 1 |
| Number of ports | 1 |
| Number of terminals | 28 |
| word count | 16384 words |
| character code | 16000 |
| Operating mode | SYNCHRONOUS |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -55 °C |
| organize | 16KX4 |
| Output characteristics | 3-STATE |
| Exportable | NO |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| encapsulated code | DIP |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Parallel/Serial | PARALLEL |
| Certification status | Not Qualified |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | MILITARY |
| Terminal surface | TIN LEAD |
| Terminal form | THROUGH-HOLE |
| Terminal location | DUAL |
| IDT61593L30CB | IDT61593S25D | IDT61593S25P | IDT61593S25C | IDT61593L25C | IDT61593L25D | IDT61593L30DB | IDT61593S30CB | IDT61593S30DB | IDT61593L25P | |
|---|---|---|---|---|---|---|---|---|---|---|
| Description | Cache SRAM, 16KX4, 13ns, CMOS, CDIP28, DIP-28 | Cache SRAM, 16KX4, 10ns, CMOS, CDIP28, DIP-28 | Cache SRAM, 16KX4, 10ns, CMOS, PDIP28, DIP-28 | Cache SRAM, 16KX4, 10ns, CMOS, CDIP28, DIP-28 | Cache SRAM, 16KX4, 10ns, CMOS, CDIP28, DIP-28 | Cache SRAM, 16KX4, 10ns, CMOS, CDIP28, DIP-28 | Cache SRAM, 16KX4, 13ns, CMOS, CDIP28, DIP-28 | Cache SRAM, 16KX4, 13ns, CMOS, CDIP28, DIP-28 | Cache SRAM, 16KX4, 13ns, CMOS, CDIP28, DIP-28 | Cache SRAM, 16KX4, 10ns, CMOS, PDIP28, DIP-28 |
| Parts packaging code | DIP | DIP | DIP | DIP | DIP | DIP | DIP | DIP | DIP | DIP |
| package instruction | DIP, | DIP, | DIP, | DIP, | DIP, | DIP, | DIP, | DIP, | DIP, | DIP, |
| Contacts | 28 | 28 | 28 | 28 | 28 | 28 | 28 | 28 | 28 | 28 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
| ECCN code | 3A001.A.2.C | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | EAR99 |
| Maximum access time | 13 ns | 10 ns | 10 ns | 10 ns | 10 ns | 10 ns | 13 ns | 13 ns | 13 ns | 10 ns |
| JESD-30 code | R-CDIP-T28 | R-GDIP-T28 | R-PDIP-T28 | R-CDIP-T28 | R-CDIP-T28 | R-GDIP-T28 | R-GDIP-T28 | R-CDIP-T28 | R-GDIP-T28 | R-PDIP-T28 |
| JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| memory density | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit |
| Memory IC Type | CACHE SRAM | CACHE SRAM | CACHE SRAM | CACHE SRAM | CACHE SRAM | CACHE SRAM | CACHE SRAM | CACHE SRAM | CACHE SRAM | CACHE SRAM |
| memory width | 4 | 4 | 4 | 4 | 4 | 4 | 4 | 4 | 4 | 4 |
| Number of functions | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of ports | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 28 | 28 | 28 | 28 | 28 | 28 | 28 | 28 | 28 | 28 |
| word count | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words |
| character code | 16000 | 16000 | 16000 | 16000 | 16000 | 16000 | 16000 | 16000 | 16000 | 16000 |
| Operating mode | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| Maximum operating temperature | 125 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 125 °C | 125 °C | 125 °C | 70 °C |
| organize | 16KX4 | 16KX4 | 16KX4 | 16KX4 | 16KX4 | 16KX4 | 16KX4 | 16KX4 | 16KX4 | 16KX4 |
| Output characteristics | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| Exportable | NO | NO | NO | NO | NO | NO | NO | NO | NO | NO |
| Package body material | CERAMIC, METAL-SEALED COFIRED | CERAMIC, GLASS-SEALED | PLASTIC/EPOXY | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, GLASS-SEALED | PLASTIC/EPOXY |
| encapsulated code | DIP | DIP | DIP | DIP | DIP | DIP | DIP | DIP | DIP | DIP |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
| Parallel/Serial | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| surface mount | NO | NO | NO | NO | NO | NO | NO | NO | NO | NO |
| technology | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| Temperature level | MILITARY | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | MILITARY | MILITARY | MILITARY | COMMERCIAL |
| Terminal surface | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal location | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| Maker | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | - | - | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) |