IDT61593L30DB datasheet, PDF - EEWORLD Datasheet

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IDT61593L30DB: DescriptionCache SRAM, 16KX4, 13ns, CMOS, CDIP28, DIP-28; Categorystorage storage; File Size44KB，2 Pages; ManufacturerIDT (Integrated Device Technology)

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IDT61593L30DB Overview

Cache SRAM, 16KX4, 13ns, CMOS, CDIP28, DIP-28

IDT61593L30DB Parametric

Parameter Name	Attribute value
Maker	IDT (Integrated Device Technology)
Parts packaging code	DIP
package instruction	DIP,
Contacts	28
Reach Compliance Code	unknown
ECCN code	3A001.A.2.C
Maximum access time	13 ns
JESD-30 code	R-GDIP-T28
JESD-609 code	e0
memory density	65536 bit
Memory IC Type	CACHE SRAM
memory width	4
Number of functions	1
Number of ports	1
Number of terminals	28
word count	16384 words
character code	16000
Operating mode	SYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	16KX4
Output characteristics	3-STATE
Exportable	NO
Package body material	CERAMIC, GLASS-SEALED
encapsulated code	DIP
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal surface	TIN LEAD
Terminal form	THROUGH-HOLE
Terminal location	DUAL

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IDT61593L30DB Related Products

	IDT61593L30DB	IDT61593S25D	IDT61593S25P	IDT61593S25C	IDT61593L25C	IDT61593L25D	IDT61593S30CB	IDT61593S30DB	IDT61593L30CB	IDT61593L25P
Description	Cache SRAM, 16KX4, 13ns, CMOS, CDIP28, DIP-28	Cache SRAM, 16KX4, 10ns, CMOS, CDIP28, DIP-28	Cache SRAM, 16KX4, 10ns, CMOS, PDIP28, DIP-28	Cache SRAM, 16KX4, 10ns, CMOS, CDIP28, DIP-28	Cache SRAM, 16KX4, 10ns, CMOS, CDIP28, DIP-28	Cache SRAM, 16KX4, 10ns, CMOS, CDIP28, DIP-28	Cache SRAM, 16KX4, 13ns, CMOS, CDIP28, DIP-28	Cache SRAM, 16KX4, 13ns, CMOS, CDIP28, DIP-28	Cache SRAM, 16KX4, 13ns, CMOS, CDIP28, DIP-28	Cache SRAM, 16KX4, 10ns, CMOS, PDIP28, DIP-28
Parts packaging code	DIP	DIP	DIP	DIP	DIP	DIP	DIP	DIP	DIP	DIP
package instruction	DIP,	DIP,	DIP,	DIP,	DIP,	DIP,	DIP,	DIP,	DIP,	DIP,
Contacts	28	28	28	28	28	28	28	28	28	28
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	3A001.A.2.C	EAR99	EAR99	EAR99	EAR99	EAR99	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	EAR99
Maximum access time	13 ns	10 ns	10 ns	10 ns	10 ns	10 ns	13 ns	13 ns	13 ns	10 ns
JESD-30 code	R-GDIP-T28	R-GDIP-T28	R-PDIP-T28	R-CDIP-T28	R-CDIP-T28	R-GDIP-T28	R-CDIP-T28	R-GDIP-T28	R-CDIP-T28	R-PDIP-T28
JESD-609 code	e0	e0	e0	e0	e0	e0	e0	e0	e0	e0
memory density	65536 bit	65536 bit	65536 bit	65536 bit	65536 bit	65536 bit	65536 bit	65536 bit	65536 bit	65536 bit
Memory IC Type	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM
memory width	4	4	4	4	4	4	4	4	4	4
Number of functions	1	1	1	1	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1	1	1	1	1
Number of terminals	28	28	28	28	28	28	28	28	28	28
word count	16384 words	16384 words	16384 words	16384 words	16384 words	16384 words	16384 words	16384 words	16384 words	16384 words
character code	16000	16000	16000	16000	16000	16000	16000	16000	16000	16000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	125 °C	70 °C	70 °C	70 °C	70 °C	70 °C	125 °C	125 °C	125 °C	70 °C
organize	16KX4	16KX4	16KX4	16KX4	16KX4	16KX4	16KX4	16KX4	16KX4	16KX4
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Exportable	NO	NO	NO	NO	NO	NO	NO	NO	NO	NO
Package body material	CERAMIC, GLASS-SEALED	CERAMIC, GLASS-SEALED	PLASTIC/EPOXY	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, GLASS-SEALED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, GLASS-SEALED	CERAMIC, METAL-SEALED COFIRED	PLASTIC/EPOXY
encapsulated code	DIP	DIP	DIP	DIP	DIP	DIP	DIP	DIP	DIP	DIP
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	MILITARY	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	MILITARY	MILITARY	MILITARY	COMMERCIAL
Terminal surface	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maker	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	-	-	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)

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