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SDF4N90JABEHSB

Description
Power Field-Effect Transistor, 4A I(D), 900V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254Z, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size66KB,1 Pages
ManufacturerSolitron Devices Inc.
Download Datasheet Parametric View All

SDF4N90JABEHSB Overview

Power Field-Effect Transistor, 4A I(D), 900V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254Z, 3 PIN

SDF4N90JABEHSB Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerSolitron Devices Inc.
Parts packaging codeTO-254Z
package instructionFLANGE MOUNT, S-MSFM-T3
Contacts3
Reach Compliance Codeunknown
Other featuresCUSTOM BENT LEAD OPTIONS ARE AVAILABLE
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage900 V
Maximum drain current (ID)4 A
Maximum drain-source on-resistance2.4 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeS-MSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeSQUARE
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power consumption environment100 W
Maximum pulsed drain current (IDM)16 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Maximum off time (toff)160 ns
Maximum opening time (tons)100 ns
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