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CMLD6263TR

Description
Rectifier Diode, Schottky, 2 Element, 0.015A, 70V V(RRM), Silicon, PICOMINI-6
CategoryDiscrete semiconductor    diode   
File Size577KB,2 Pages
ManufacturerCentral Semiconductor
Download Datasheet Parametric Compare View All

CMLD6263TR Overview

Rectifier Diode, Schottky, 2 Element, 0.015A, 70V V(RRM), Silicon, PICOMINI-6

CMLD6263TR Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerCentral Semiconductor
package instructionPICOMINI-6
Contacts6
Reach Compliance Codenot_compliant
ECCN codeEAR99
ConfigurationSEPARATE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.41 V
JESD-30 codeR-PDSO-F6
JESD-609 codee0
Number of components2
Number of terminals6
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current0.015 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation0.25 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage70 V
Maximum reverse current0.2 µA
Maximum reverse recovery time0.005 µs
Reverse test voltage50 V
surface mountYES
technologySCHOTTKY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formFLAT
Terminal locationDUAL

CMLD6263TR Preview

CMLD6263
SURFACE MOUNT
DUAL, ISOLATED
HIGH VOLTAGE
SILICON SCHOTTKY DIODES
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLD6263 Series
incorporates two galvanically isolated, high voltage,
low VF Silicon Diodes in a space saving SOT-563
surface mount package. These diodes are designed
for fast switching applications requiring a low forward
voltage drop.
MARKING CODE: 63D
SOT-563 CASE
FEATURES:
• High Voltage (70V)
• Low Forward Voltage
• Galvanically Isolated
MAXIMUM RATINGS:
(TA=25°C)
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Forward Surge Current, tp=1.0s
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VRRM
IF
IFSM
PD
TJ, Tstg
Θ
JA
70
15
50
250
-65 to +150
500
UNITS
V
mA
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
MAX
IR
BVR
VF
CT
trr
VR=50V
IR=10μA
IF=1.0mA
VR=0, f=1.0MHz
IR=IF=10mA, Irr=1.0mA, RL=100Ω
70
395
410
2.0
5.0
98
200
UNITS
nA
V
mV
pF
ns
R3 (18-January 2010)
CMLD6263
SURFACE MOUNT
DUAL, ISOLATED
HIGH VOLTAGE
SILICON SCHOTTKY DIODES
SOT-563 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
LEAD CODE:
1) Anode D1
2) NC
3) Anode D2
4) Cathode D2
5) NC
6) Cathode D1
MARKING CODE: 63D
R3 (18-January 2010)
w w w. c e n t r a l s e m i . c o m

CMLD6263TR Related Products

CMLD6263TR CMLD6263BK
Description Rectifier Diode, Schottky, 2 Element, 0.015A, 70V V(RRM), Silicon, PICOMINI-6 Rectifier Diode, Schottky, 2 Element, 0.015A, 70V V(RRM), Silicon, PICOMINI-6
Is it Rohs certified? incompatible incompatible
Maker Central Semiconductor Central Semiconductor
package instruction PICOMINI-6 PICOMINI-6
Contacts 6 6
Reach Compliance Code not_compliant not_compliant
ECCN code EAR99 EAR99
Configuration SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.41 V 0.41 V
JESD-30 code R-PDSO-F6 R-PDSO-F6
JESD-609 code e0 e0
Number of components 2 2
Number of terminals 6 6
Maximum operating temperature 150 °C 150 °C
Minimum operating temperature -65 °C -65 °C
Maximum output current 0.015 A 0.015 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Maximum power dissipation 0.25 W 0.25 W
Certification status Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 70 V 70 V
Maximum reverse current 0.2 µA 0.2 µA
Maximum reverse recovery time 0.005 µs 0.005 µs
Reverse test voltage 50 V 50 V
surface mount YES YES
technology SCHOTTKY SCHOTTKY
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form FLAT FLAT
Terminal location DUAL DUAL

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