BAS16 series
High-speed switching diodes
Rev. 05 — 25 August 2008
Product data sheet
1. Product profile
1.1 General description
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)
plastic packages.
Table 1.
Product overview
Package
NXP
BAS16
BAS16H
BAS16J
BAS16L
BAS16T
BAS16VV
BAS16VY
BAS16W
BAS316
BAS516
SOT23
SOD123F
SOD323F
SOD882
SOT416
SOT666
SOT363
SOT323
SOD323
SOD523
JEITA
-
-
SC-90
-
SC-75
-
SC-88
SC-70
SC-76
SC-79
JEDEC
TO-236AB
-
-
-
-
-
-
-
-
-
single
single
single
single
single
triple isolated
triple isolated
single
single
single
Configuration
Package
configuration
small
small and flat lead
very small and flat
lead
leadless ultra
small
ultra small
ultra small and flat
lead
very small
very small
very small
ultra small and flat
lead
Type number
1.2 Features
I
High switching speed: t
rr
≤
4 ns
I
Low leakage current
I
Repetitive peak reverse voltage:
V
RRM
≤
100 V
I
Low capacitance
I
Reverse voltage: V
R
≤
100 V
I
Small SMD plastic packages
1.3 Applications
I
High-speed switching
I
General-purpose switching
NXP Semiconductors
BAS16 series
High-speed switching diodes
1.4 Quick reference data
Table 2.
Symbol
Per diode
V
R
I
R
t
rr
[1]
Quick reference data
Parameter
reverse voltage
reverse current
reverse recovery time
V
R
= 80 V
[1]
Conditions
Min
-
-
-
Typ
-
-
-
Max
100
0.5
4
Unit
V
µA
ns
When switched from I
F
= 10 mA to I
R
= 10 mA; R
L
= 100
Ω;
measured at I
R
= 1 mA.
2. Pinning information
Table 3.
Pin
1
2
3
Pinning
Description
anode
not connected
cathode
1
2
006aaa144
Simplified outline
Graphic symbol
BAS16; BAS16T; BAS16W
3
1
3
2
006aaa764
BAS16H; BAS16J; BAS316; BAS516
1
2
cathode
anode
[1]
1
001aab540
2
1
2
006aab040
BAS16L
1
2
cathode
anode
[1]
1
2
1
2
006aab040
Transparent
top view
BAS16VV; BAS16VY
1
2
3
4
5
6
anode (diode 1)
anode (diode 2)
anode (diode 3)
cathode (diode 3)
cathode (diode 2)
cathode (diode 1)
1
2
3
001aab555
6
5
4
6
5
4
1
2
3
006aab106
[1]
The marking bar indicates the cathode.
BAS16_SER_5
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 05 — 25 August 2008
2 of 20
NXP Semiconductors
BAS16 series
High-speed switching diodes
3. Ordering information
Table 4.
Ordering information
Package
Name
BAS16
BAS16H
BAS16J
BAS16L
BAS16T
BAS16VV
BAS16VY
BAS16W
BAS316
BAS516
-
-
SC-90
-
SC-75
-
SC-88
SC-70
SC-76
SC-79
Description
plastic surface-mounted package; 3 leads
plastic surface-mounted package; 2 leads
plastic surface-mounted package; 2 leads
leadless ultra small plastic package; 2 terminals;
body 1.0
×
0.6
×
0.5 mm
plastic surface-mounted package; 3 leads
plastic surface-mounted package; 6 leads
plastic surface-mounted package; 6 leads
plastic surface-mounted package; 3 leads
plastic surface-mounted package; 2 leads
plastic surface-mounted package; 2 leads
Version
SOT23
SOD123F
SOD323F
SOD882
SOT416
SOT666
SOT363
SOT323
SOD323
SOD523
Type number
4. Marking
Table 5.
BAS16
BAS16H
BAS16J
BAS16L
BAS16T
BAS16VV
BAS16VY
BAS16W
BAS316
BAS516
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Marking codes
Marking code
[1]
A6*
A1
AR
S2
A6
53
16*
A6*
A6
6
Type number
BAS16_SER_5
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 05 — 25 August 2008
3 of 20
NXP Semiconductors
BAS16 series
High-speed switching diodes
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
V
RRM
V
R
I
F
repetitive peak reverse
voltage
reverse voltage
forward current
BAS16
BAS16H
BAS16L
BAS16T
BAS16VV
BAS16VY
BAS16W
BAS16J
BAS316
BAS516
I
FRM
I
FSM
repetitive peak forward
current
non-repetitive peak forward
current
t
p
≤
0.5
µs;
δ ≤
0.25
square wave
t
p
= 1
µs
t
p
= 1 ms
t
p
= 1 s
P
tot
total power dissipation
BAS16
BAS16H
T
amb
≤
25
°C
T
amb
≤
25
°C
[1]
[2][5]
[6]
[5][6]
[7]
[4]
[1]
[2]
Parameter
Conditions
Min
-
-
-
-
-
-
-
-
Max
100
100
215
215
155
200
175
250
Unit
V
V
mA
mA
mA
mA
mA
mA
[1]
[1][3]
[1]
[1]
-
500
mA
-
-
-
-
-
-
-
-
-
-
-
-
-
-
4
1
0.5
250
380
830
550
250
170
180
250
200
400
500
A
A
A
mW
mW
mW
mW
mW
mW
mW
mW
mW
mW
mW
BAS16J
BAS16L
BAS16T
BAS16VV
BAS16VY
BAS16W
BAS316
BAS516
T
amb
≤
25
°C
T
amb
≤
25
°C
T
sp
≤
90
°C
T
amb
≤
25
°C
T
sp
≤
85
°C
T
amb
≤
25
°C
T
sp
≤
90
°C
T
sp
≤
90
°C
[5][6]
[7]
[2][5]
[6]
[1]
[1][3]
[5][8]
[1][3]
[8]
[1]
[1][6]
[1][5]
[6]
BAS16_SER_5
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 05 — 25 August 2008
4 of 20
NXP Semiconductors
BAS16 series
High-speed switching diodes
Table 6.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per device
T
j
T
amb
T
stg
[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
Parameter
junction temperature
ambient temperature
storage temperature
Conditions
Min
-
−65
−65
Max
150
+150
+150
Unit
°C
°C
°C
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB with 60
µm
copper strip line.
Single diode loaded.
T
j
= 25
°C
prior to surge.
Reflow soldering is the only recommended soldering method.
Soldering point of cathode tab.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
Soldering points at pins 4, 5 and 6.
6. Thermal characteristics
Table 7.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
BAS16
BAS16H
BAS16J
BAS16L
BAS16VV
Conditions
in free air
[1]
[2][3]
[3][4]
[3][4]
[2][3]
[2][3]
[5]
[3][4]
[5]
Min
Typ
Max
Unit
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
500
330
150
230
500
700
410
625
K/W
K/W
K/W
K/W
K/W
K/W
K/W
K/W
BAS16W
R
th(j-t)
thermal resistance from
junction to tie-point
BAS16
BAS16W
[1]
-
-
-
-
330
300
K/W
K/W
BAS16_SER_5
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 05 — 25 August 2008
5 of 20
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