CREAT BY ART
MBR1635 - MBR16150
16.0 AMPS. Schottky Barrier Rectifiers
TO-220AC
Features
Plastic material used carriers Underwriters
Laboratory Classification 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Guard-ring for overvoltage protection
High temperature soldering guaranteed:
260℃/10 seconds, 0.25"(6.35mm) from case
Green compound with suffix "G" on packing
code & prefix "G" on datecode
Mechanical Data
Cases: JEDEC TO-220AC molded plastic body
Terminals: Pure tin plated, lead free, solderable
per MIL-STD-750, Method 2026
Polarity: As marked
Mounting position:Any
Mounting torque: 5 in. - lbs, max
Weight: 1.86 grams
Ordering Information(example)
Part No.
MBR1635
Package
Packing
Packing
code
D0
Green Compound
Packing code
D0G
TO-220AC 50 / TUBE
Maximum Ratings and Electrical Characteristics
Rating at 25
℃
ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20KHz)
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method)
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage at: (Note 2)
IF=16A, T
A
=25℃
IF=16A, T
A
=125℃
Maximum Ilstantaneous Reverse Current @ T
A
=25
℃
at Rated DC Blocking Voltage
@ T
A
=125
℃
Voltage Rate of Change (Rated V
R
)
Typical Junction Capacitance
Maximum Typical Thermal Resistance
Operating Junction Temperature Range
Storage Temperature Range
Note 1: 2.0uS Pulse Width, f=1.0KHz
Note 2: Pulse Test : 300uS Pulse Width, 1% Duty Cycle
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FRM
I
FSM
I
RRM
V
F
MBR
1635
35
24
35
MBR
1645
45
31
45
MBR
1650
50
35
50
MBR
1660
60
42
60
16
32
150
MBR
1690
90
63
90
MBR MBR
16100 16150
100
150
70
100
105
150
Units
V
V
V
A
A
A
1.0
0.63
0.57
0.5
15
0.75
0.65
0.5
10
10,000
500
3
- 65 to + 150
- 65 to + 175
0.5
0.85
0.75
0.3
7.5
0.95
0.92
0.1
5
A
V
mA
mA
V/uS
pF
O
I
R
dV/dt
Cj
R
θJC
T
J
T
STG
C/W
O
O
C
C
Version:H12
RATINGS AND CHARACTERISTIC CURVES (MBR1635 THRU MBR16150)
FIG.1- FORWARD CURRENT DERATING CURVE
PEAK FORWARD SURGE CURRENT (A)
20
16
12
8
4
0
0
50
100
150
CASE TEMPERATURE (
o
C)
RESISTIVE OR
INDUCTIVELOAD
WITH HEATSINK
350
300
250
200
150
100
50
1
10
NUMBER OF CYCLES AT 60 Hz
100
8.3mS Single Half Sine Wave
JEDEC Method
FIG. 2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
AVERAGE FORWARD
A
CURRENT (A)
FIG. 3- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
100
FIG. 4- TYPICAL REVERSE CHARACTERISTICS
100
INSTANTANEOUS FORWARD CURRENT (A)
10
TA=125℃
Pulse Width=300us
1% Duty Cycle
INSTANTANEOUS REVERSE CURRENT (mA)
10
TA=125℃
1
TA=25℃
0.1
1
TA=25℃
0.1
MBR1635-MBR1645
MBR1650-MBR1660
MBR1690-MBR16150
0.01
MBR1635-MBR1645
MBR1650-MBR16150
0.001
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 6- TYPICAL TRANSIENT THERMAL
CHARACTERISTICS
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
FORWARD VOLTAGE (V)
FIG. 5- TYPICAL JUNCTION CAPACITANCE
1
1.1 1.2
10000
JUNCTION CAPACITANCE (pF)
A
TA=25℃
f=1.0MHz
Vsig=50mVp-p
100
1000
TRANSIENT THERMAL
IMPEDANCE (℃/W)
10
1
100
0.1
1
10
100
REVERSE VOLTAGE (V)
0.1
0.01
0.1
1
10
100
T-PULSE DURATION. (sec)
Version:H12
MCU
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