DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D109
BSS87
N-channel enhancement mode
vertical D-MOS transistor
Product specification
Supersedes data of 1997 June 23
2001 May 18
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
FEATURES
•
Direct interface to C-MOS, TTL, etc.
•
High-speed switching
•
No secondary breakdown
•
Low R
DSon
.
APPLICATIONS
•
Line current interruptor in telephone sets
•
Applications in relay, high-speed and line transformer
drivers.
DESCRIPTION
N-channel enhancement mode vertical D-MOS transistor
in a SOT89 package.
1
Bottom view
2
3
MAM355
BSS87
PINNING - SOT89
PIN
1
2
3
source
drain
gate
DESCRIPTION
handbook, halfpage
d
g
s
Fig.1 Simplified outline (SOT89) and symbol.
QUICK REFERENCE DATA
SYMBOL
V
DS
V
GSO
I
D
P
tot
R
DSon
y
fs
PARAMETER
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
total power dissipation
drain-source on-state resistance
forward transfer admittance
T
amb
≤
25
°C
I
D
= 400 mA; V
GS
= 10 V
I
D
= 400 mA; V
DS
= 25 V
open drain
CONDITIONS
MIN.
−
−
−
−
−
140
TYP.
−
−
−
−
1.6
750
MAX.
200
±20
400
1
3
−
UNIT
V
V
mA
W
Ω
mS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
DS
V
GSO
I
D
I
DM
P
tot
T
stg
T
j
Note
1. Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead minimum
10
×
10 mm
PARAMETER
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
junction temperature
T
amb
≤
25
°C;
note 1
open drain
CONDITIONS
−
−
−
−
−
−55
−
MIN.
MAX.
200
±20
400
1.6
1
+150
150
V
V
mA
A
W
°C
°C
UNIT
2001 May 18
2
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
125
BSS87
UNIT
K/W
1. Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead minimum
10
×
10 mm
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)DSS
I
DSS
I
GSS
V
GSth
R
DSon
Y
fs
C
iss
C
oss
C
rss
PARAMETER
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
drain-source on-state resistance
transfer admittance
input capacitance
output capacitance
reverse transfer capacitance
CONDITIONS
I
D
= 250
µA;
V
GS
= 0
V
DS
= 60 V; V
GS
= 0
V
DS
= 200 V; V
GS
= 0
V
GS
=
±20
V; V
DS
= 0
I
D
= 1 mA; V
GS
= V
DS
I
D
= 400 mA; V
GS
= 10 V
I
D
= 400 mA; V
DS
= 25 V
V
DS
= 25 V; V
GS
= 0;
f = 1 MHz
V
DS
= 25 V; V
GS
= 0;
f = 1 MHz
V
DS
= 25 V; V
GS
= 0;
f = 1 MHz
MIN.
200
−
−
−
0.8
−
140
−
−
−
TYP.
−
−
0.1
−
−
1.6
750
100
20
10
MAX.
−
200
60
±100
2.8
3
−
120
30
15
UNIT
V
nA
µA
nA
V
Ω
mS
pF
pF
pF
Switching times (see Figs
2
and
3)
t
on
t
off
turn-on time
turn-off time
I
D
= 250 mA; V
DD
= 50 V;
V
GS
= 0 to 10 V
I
D
= 250 mA; V
DD
= 50 V;
V
GS
= 0 to 10 V
−
−
6
49
10
60
ns
ns
2001 May 18
3
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSS87
handbook, halfpage
handbook, halfpage
90 %
VDD = 50 V
INPUT
10 %
90 %
10 V
0V
ID
50
Ω
MSA631
OUTPUT
10 %
ton
toff
MBB692
V
DD
= 50 V.
Fig.2 Switching times test circuit.
Fig.3 Input and output waveforms.
2001 May 18
4
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 3 leads
BSS87
SOT89
D
B
A
b3
E
HE
L
1
2
b2
3
c
w
M
b1
e
1
e
0
2
scale
4 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.6
1.4
b1
0.48
0.35
b2
0.53
0.40
b3
1.8
1.4
c
0.44
0.37
D
4.6
4.4
E
2.6
2.4
e
3.0
e1
1.5
HE
4.25
3.75
L
min.
0.8
w
0.13
OUTLINE
VERSION
SOT89
REFERENCES
IEC
JEDEC
TO-243
EIAJ
SC-62
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
2001 May 18
5
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