BSP250 datasheet, PDF - EEWORLD Datasheet

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BSP250: DescriptionPower Field-Effect Transistor; CategoryDiscrete semiconductor The transistor; File Size208KB，13 Pages; ManufacturerNexperia; Websitehttps://www.nexperia.com; Environmental Compliance

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BSP250 Overview

Power Field-Effect Transistor

BSP250 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Nexperia
package instruction	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (ID)	3 A
Maximum drain-source on-resistance	0.4 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G4
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	P-CHANNEL
Maximum pulsed drain current (IDM)	12 A
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON

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Important notice

Dear Customer,

On 7 February 2017 the former NXP Standard Product business became a new company with the

tradename

Nexperia.

Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS

semiconductors with its focus on the automotive, industrial, computing, consumer and wearable

application markets

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use

the references to Nexperia, as shown below.

Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,

use

http://www.nexperia.com

Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use

salesaddresses@nexperia.com

(email)

Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on

the version, as shown below:

reserved

Should be replaced with:

If you have any questions related to the data sheet, please contact our nearest sales office via e-mail

or telephone (details via

salesaddresses@nexperia.com).

Thank you for your cooperation and

understanding,

Kind regards,

Team Nexperia

BSP250 Related Products

	BSP250	934033450135	934033450115	BSP250/T3	BSP250T/R	BSP250-T
Description	Power Field-Effect Transistor	Power Field-Effect Transistor	Power Field-Effect Transistor	Power Field-Effect Transistor	Power Field-Effect Transistor	Power Field-Effect Transistor
Maker	Nexperia	Nexperia	Nexperia	Nexperia	Nexperia	Nexperia
package instruction	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant
Shell connection	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V	30 V	30 V	30 V	30 V	30 V
Maximum drain current (ID)	3 A	3 A	3 A	3 A	3 A	3 A
Maximum drain-source on-resistance	0.4 Ω	0.4 Ω	0.4 Ω	0.4 Ω	0.4 Ω	0.4 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4
Number of components	1	1	1	1	1	1
Number of terminals	4	4	4	4	4	4
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL
Maximum pulsed drain current (IDM)	12 A	12 A	12 A	12 A	12 A	12 A
surface mount	YES	YES	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	-
JESD-609 code	e3	e3	e3	-	e3	-
Humidity sensitivity level	1	1	1	-	1	-
Terminal surface	Tin (Sn)	Tin (Sn)	Tin (Sn)	-	Tin (Sn)	-
Peak Reflow Temperature (Celsius)	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-
Maximum time at peak reflow temperature	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-

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