TLP785,TLP785F
TOSHIBA Photocoupler
GaAs IRED & Photo−Transistor
TLP785,TLP785F
Office Equipment
Household Appliances
Solid State Relays
Switching Power Supplies
Various Controllers
Signal Transmission Between Different Voltage
Circuits
The TOSHIBA TLP785 consists of a silicone phototransistor optically
coupled to a gallium arsenide (GaAs) infrared emitting diode in a four
lead plastic DIP (DIP4) with having high isolation voltage
(AC: 5kV
RMS
(min)).
TLP785F is a lead forming type for the long creepage surface mounting
of TLP785.
TLP785
Unit: mm
TOSHIBA
Weight: 0.32 g (typ.)
11-5L1
•
•
•
•
•
•
•
•
•
TLP785: 7.62mm pitch type DIP4
TLP785F: 10.16mm pitch type DIP4
Collector-emitter voltage: 80V (min.)
Current transfer ratio: 50% (min.)
Rank GB: 100% (min.)
Isolation voltage: 5000V
rms
(min.)
UL approved: UL1577, file No. E67349
BSI under application: BS EN60065:2002
BS EN60950-1:2006
SEMKO under application:EN60065:2002
EN60950-1:2001, EN60335-1:2002
Option(D4)type
VDE approved: DIN EN60747-5-2
(Note): When an EN60747-5-2 approved type is needed,
Please designate “Option (D4)”
TLP785F
Unit: mm
TOSHIBA
.
•
Construction mechanical rating
7.62mm Pitch
Standard Type
Creepage distance
Clearance
Insulation thickness
Inner creepage distance
7.0mm(min)
7.0mm(min)
0.4mm(min)
4.0mm(min)
10.16mm Pitch
TLPxxxF Type
8.0mm(min)
8.0mm(min)
0.4mm(min)
4.0mm(min)
11-5L102
Weight: 0.32g (typ.)
Pin Configurations
(top view)
1
2
1 : Anode
2 : Cathode
3 : Emitter
4 : Collector
4
3
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2012-02-20
TLP785,TLP785F
Current Transfer Ratio
Type
Classification
(Note 1)
None
Rank Y
Rank GR
Rank BL
TLP785
Rank GB
Rank YH
Rank GRL
Rank GRH
Rank BLL
Current Transfer Ratio (%)
(I
C
/ I
F
)
I
F
= 5mA, V
CE
= 5V, Ta = 25°C
Min
Max
50
50
100
200
100
75
100
150
200
600
150
300
600
600
150
200
300
400
Blank
YE
GR
BL
GB
Y+
G
G+
B
Marking of Classification
(Note 1): Ex. rank GB: TLP785 (GB)
(Note 2): Application type name for certification test, please use standard product type name, i. e.
TLP785 (GB): TLP785
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Forward current
Forward current derating (Ta
≥
39°C)
Pulse forward current
LED
Power dissipation
Power dissipation derating
Reverse voltage
Junction temperature
Collector−emitter voltage
Emitter−collector voltage
Detector
Collector current
Power dissipation (single circuit)
Power dissipation derating
(Ta
≥
25°C)
Junction temperature
Operating temperature range
Storage temperature range
Lead soldering temperature (10s)
Total package power dissipation
Total package power dissipation derating
(Ta
≥
25°C)
Isolation voltage
(Note 4)
(Note 3)
Symbol
I
F
ΔI
F
/ °C
I
FP
P
D
ΔP
D
/ °C
V
R
T
j
V
CEO
V
ECO
I
C
P
C
ΔP
C
/ °C
T
j
T
opr
T
stg
T
sol
P
T
ΔP
T
/ °C
BV
S
Rating
60
−0.7
1
90
−0.9
5
125
80
7
50
150
−1.5
125
−55
to 110
−55
to 125
260
240
−2.4
5000
Unit
mA
mA / °C
A
mW
mW / °C
V
°C
V
V
mA
mW
mW / °C
°C
°C
°C
°C
mW
mW / °C
V
rms
(Note): Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 3): 100
μs
pulse, 100 Hz frequency
(Note 4): AC, 1 min., R.H.≤ 60%. Apply voltage to LED pin and detector pin together.
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2012-02-20
TLP785,TLP785F
Recommended Operating Conditions (Note)
Characteristic
Supply voltage
Forward current
Collector current
Operating temperature
Symbol
V
CC
I
F
I
C
T
opr
Min
―
―
―
−25
Typ.
5
16
1
―
Max
24
25
10
85
Unit
V
mA
mA
°C
(Note): Recommended operating conditions are given as a design guideline
to obtain expected performance of the device.
Additionally, each item is an independent guideline respectively.
In developing designs using this product, please confirm
specified characteristics shown in this document.
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
LED
Reverse current
Capacitance
Collector−emitter
breakdown voltage
Detector
Emitter−collector
breakdown voltage
Collector dark current
Capacitance
(collector to emitter)
Symbol
V
F
I
R
C
T
V
(BR) CEO
V
(BR) ECO
I
D
(I
CEO
)
C
CE
Test Condition
I
F
= 10 mA
V
R
= 5 V
V = 0V, f = 1 MHz
I
C
= 0.5 mA
I
E
= 0.1 mA
V
CE
= 24 V
V
CE
= 24 V ,Ta = 85°C
V = 0V, f = 1 MHz
Min
1.0
―
―
80
7
―
―
―
Typ.
1.15
―
30
―
―
0.01
0.6
6
Max
1.3
10
―
―
―
0.1
50
―
Unit
V
μA
pF
V
V
μA
μA
pF
Coupled Electrical Characteristics
(Ta = 25°C)
Characteristic
Current transfer ratio
Symbol
I
C
/ I
F
Test Condition
I
F
= 5 mA, V
CE
= 5 V
Min
50
Rank GB
100
―
Rank GB
30
―
―
Rank GB
―
Typ.
―
―
60
―
―
0.2
―
Max
600
600
―
―
0.4
―
0.4
V
Unit
%
Saturated CTR
I
C
/ I
F (sat)
IF = 1 mA, V
CE
= 0.4 V
I
C
= 2.4 mA, I
F
= 8 mA
%
Collector−emitter saturation
voltage
V
CE (sat)
I
C
= 0.2 mA, I
F
= 1 mA
Isolation Characteristics
(Ta = 25°C)
Characteristic
Capacitance
(input to output)
Isolation resistance
Symbol
C
S
R
S
Test Condition
V
S
= 0V, f = 1 MHz
V
S
= 500 V
AC, 1 minute
Isolation voltage
BV
S
AC, 1 second, in oil
DC, 1 minute, in oil
Min
―
1×10
12
Typ.
0.8
10
14
Max
―
―
―
―
―
Unit
pF
Ω
V
rms
Vdc
5000
―
―
―
10000
10000
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2012-02-20
TLP785,TLP785F
Switching Characteristics
(Ta = 25°C)
Characteristics
Rise time
Fall time
Turn−on time
Turn−off time
Turn−on time
Storage time
Turn−off time
Symbol
t
r
t
f
t
on
t
off
t
on
t
s
t
off
R
L
= 1.9 kΩ
V
CC
= 5 V, I
F
= 16 mA
(fig. 1)
V
CC
= 10 V, I
C
= 2 mA
R
L
= 100Ω
Test Condition
Min
―
―
―
―
―
―
―
Typ.
2
3
3
3
1.5
25
50
Max
―
―
―
―
―
―
―
μs
μs
Unit
I
F
I
F
R
L
V
CC
V
CE
V
CE
t
s
V
CC
4.5V
0.5V
t
on
t
off
(fig. 1): Switching time test circuit
Surface-Mount Lead Form Option
TLP785(LF6)
Unit: mm
TLP785F(LF7)
Unit: mm
TOSHIBA
11-5L106
0.31g (typ.)
TOSHIBA
11-5L107
0.31g (typ.)
Weight:
Weight:
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2012-02-20
TLP785,TLP785F
Option: Specifications for Embossed-Tape Packing; (TP6)/(TP7)
1. Applicable Package
Package Name
DIP4LF6
DIP4LF7
Product Type
TLP785
TLP785F
2. Product Naming System
Type of package used for shipment is denoted by a symbol suffix after a product number. The method of
classification is as below.
(Example)
TLP785 (BL−TP6,F
[[G]]/RoHS COMPATIBLE
Tape type
CTR Rank
Device name
(Example2)
TLP785F (BL−TP7,F
[[G]]/RoHS COMPATIBLE
Tape type
CTR Rank
Device name
3. Tape Dimensions
3.1 Orientation of Device in Relation to Direction of Tape Movement
Device orientation in the recesses is as shown in Figure 2.
Tape feed
P
1pin indication
Figure2 Device Orientation
3.2 Tape Packing Quantity:2000 devices per reel
3.3 Empty Device Recesses Are as Shown in Table 1.
Table1 Empty Device Recesses
Standard
Occurrences of 2 or more
successive empty device
recesses
Single empty
recesses
device
Remarks
Within any given 40-mm section of
tape, not including leader and trailer
Not including leader and trailer
0
6 devices (max.) per reel
3.4 Start and End of Tape
The start of the tape has 30 or more empty holes. The end of the tape has 50 or more empty holes.
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2012-02-20
MCU
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