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K6T0808U1D-RD85

Description
Standard SRAM, 32KX8, 85ns, CMOS, PDSO28, 8 X 13.40 MM, REVERSE, TSOP1-28
Categorystorage    storage   
File Size153KB,9 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

K6T0808U1D-RD85 Overview

Standard SRAM, 32KX8, 85ns, CMOS, PDSO28, 8 X 13.40 MM, REVERSE, TSOP1-28

K6T0808U1D-RD85 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSAMSUNG
Parts packaging codeTSOP
package instructionTSOP1-R, TSSOP28,.53,22
Contacts28
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum access time85 ns
I/O typeCOMMON
JESD-30 codeR-PDSO-G28
JESD-609 codee0
length11.8 mm
memory density262144 bit
Memory IC TypeSTANDARD SRAM
memory width8
Number of functions1
Number of terminals28
word count32768 words
character code32000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-25 °C
organize32KX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP1-R
Encapsulate equivalent codeTSSOP28,.53,22
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3 V
Certification statusNot Qualified
reverse pinoutYES
Maximum seat height1.2 mm
Minimum standby current2 V
Maximum slew rate0.035 mA
Maximum supply voltage (Vsup)3.3 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.55 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width8 mm
K6T0808V1D, K6T0808U1D Family
Document Title
32Kx8 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0
1.0
History
Initial draft
Finalize
- Add 70ns part in KM62U256D Family
- Show I
CC
read only, and increased value
I
CC
= 2mA
→I
CC
Read = 5mA
- Seperate I
CC1
read and write
I
CC1
= 5mA→I
CC1
Read = 5mA, I
CC1
Write = 10mA
- Improved standby current(I
SB1
)
Commercial part: 10µA→5µA
Extended and Industrial part: 20µA→5µA
- Improved V
IL
(Min.): 0.4V→0.6V
- Improved power dissipation: 0.7W→1W
Errata correction
- Removed TTL Compatible’from Features
- Errata correction from 4.5V to 3.0/2.7V for
DATA RETENTION WAVE FORM
Draft Data
April 1, 1997
November 12, 1997
Remark
Preliminary
Final
1.01
October 24, 2001
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO, LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 1.01
October 2001
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