PRELIMINARY DATA SHEET
GaAs INTEGRATED CIRCUIT
µ
PG2121TB
L-BAND UP/DOWN CONVERTER
DESCRIPTION
The
µ
PG2121TB is L-band up-converter or down-converter IC (LO Buff. Amp. + Passive Mixer). The device can
convert the RF frequency to IF frequency and operate low current. It housed in an original 6-pin super minimold
package that is smaller than usual 6-pin minimold easy to install and contributes to miniaturizing the system.
FEATURES
• +2.8 V single voltage
• Low distortion (IIP
3
= +23 dBm TYP.)
• Low current operation (I
DD
= 3.5 mA TYP.)
• LO buffer amplifier and passive mixer on a single chip
• 6-pin super minimold package (Size: 2.0
×
1.25
×
0.9 mm)
APPLICATION
• L-band digital cellular etc.
ORDERING INFORMATION
Part Number
Package
6-pin super minimold
Marking
G2E
Supplying Form
Embossed tape 8 mm wide.
Pin 1 face the tape perforation side.
Qty 3kpcs / reel.
µ
PG2121TB-E3
Remark
To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order:
µ
PG2121TB)
Caution
The IC must be handled with care to prevent static discharge because its circuit composed of
GaAS HJ-FET.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P15014EJ1V0DS00 (1st edition)
Date Published July 2000 NS CP(K)
Printed in Japan
©
2000
µ
PG2121TB
PIN CONNECTIONS
Pin No.
1
2
3
Connection
RF or IF
GND
V
DD
Pin No.
4
5
6
Connection
LO IN
GND
IF or RF
Top View
Bottom View
4
5
6
4
5
6
3
2
1
3
2
1
Top View
4
5
6
2
1
ABSOLUTE MAXIMUM RATINGS (T
A
= +25
°
C)
Parameter
Supply Voltage
LO Input Power
RF Input Power
Total Power Dissipation
Operating Ambient Temperature
Storage Temperature
Symbol
V
DD
P
LO
P
RF
P
tot
T
A
T
stg
Ratings
6.0
+10
+10
140
Note
G2E
3
Unit
V
dBm
dBm
mW
°C
°C
−30
to +90
−35
to +150
Note
Mounted on a 50
×
50
×
1.6 mm double copper clad epoxy glass PWB, T
A
= +85
°C
2
Preliminary Data Sheet P15014EJ1V0DS00
µ
PG2121TB
ELECTRICAL CHARACTERISTICS (T
A
= +25
°
C)
Parameter
Supply Voltage
RF Frequency
IF Frequency
LO Input Power
Symbol
V
DD
f
RF
f
IF
P
LO
MIN.
+2.7
810
50
−10
TYP.
+2.8
−
−
−5
MAX.
+3.0
960
400
0
Unit
V
MHz
MHz
dBm
ELECTRICAL CHARACTERISTICS
(Unless otherwise specified, T
A
= +25
°
C, V
DD
= 2.8 V, f
RF1
= 850 MHz, f
RF2
= 850.1 MHz, P
RF1
= P
RF2
=
−
3 dBm,
f
LO
= 940 MHz, P
LO
=
−
5 dBm, f
IF
= 90 MHz, f
IM3
= 90.1 MHz)
Parameter
Total Current
Conversion Loss
3rd Order Distortion Input Intercept
Note
Point
3rd Order Intermoduration Distortion
Local Leackage
Symbol
I
DD
L
C
IIP
3
Test Condition
MIN.
−
−
+18
−
−
TYP.
3.5
−6.0
+23
−52
−13
MAX.
4.5
−7.5
−
−42
−11
Unit
mA
dB
dBm
IM
3
L
LO
dBc
dBm
Note
IIP
3
is determined by comparing two method; theoretical calculation and cross point of IM
3
curve.
∆
IM
3
×
P
RF
+ CG
−
P
IM3
IIP
3
=
[dBm]
∆
IM
3
: P
IM3
gradient
∆
IM
3
−
1
Calculated as
∆
IM
3
= 3
Preliminary Data Sheet P15014EJ1V0DS00
3
µ
PG2121TB
EVALUATION CIRCUIT
T
A
= +25
°C,
V
DD
= +2.8 V, f = 850 MHz
L
1
IF
L
2
C
2
C
1
1
2
3
C
3
V
DD
G2E
6
RF
L
4
C
4
5
4
L
3
LO
EVALUATION BOARD
V
DD
USING THE NEC EVALUATION BOARD
Values
C
1
C
2
5 pF
33 pF
1 000 pF
5 pF
6.8 nH
15 nH
27 nH
6.8 nH
Part Number
GRM39CH 050 C50
GRM36CH 330 J50
GRM39B 102 K50
GRM39CH 050 C50
TFL0510 6N8
TFL0816 15N
TFL0816 27N
TFL0816 6N8
Maker
muRata
muRata
muRata
muRata
susumu
susumu
susumu
susumu
IF
C
3
C
3
C
2
C
1
L
1
L
2
C
4
L
1
L
2
L
3
L
4
C
4
L
4
L
3
RF
LO
4
Preliminary Data Sheet P15014EJ1V0DS00
µ
PG2121TB
TYPICAL CHARACTERISTICS (Unless otherwise specified, T
A
= +25
°
C)
IF OUTPUT POWER, IM
3
,
TOTAL CURRENT vs. RF INPUT POWER
IF Output Power P
IF
(dBm), 3rd Order
Intermoduration Distortion IM
3
(dBc)
V
DD
= 2.8 V, f
RF
= 850 MHz,
0
f
LO
= 940 MHz, f
IF
= 90 MHz,
P
LO
= –5 dBm
–10
10
10
9
Total Current I
DD
(mA), Conversion Loss L
C
(dB),
3rd Order Distortion Input Intercept Point IIP
3
(dBm),
Noise Figure NF (dB)
30
0
L
LO
25
20
P
IF
–20
–30
–40
–50
–60
–70
–80
–90
–25
–20
–15
–10
–5
0
5
10
15
7
Total Current I
DD
(mA)
8
IIP
3
–20
–40
IM
3
6
5
IM
3
15
–60
V
DD
= 2.8 V, f
RF
= 850 MHz,
f
LO
= 940 MHz, f
IF
= 90 MHz,
–80
P
RF
= –3 dBm
–100
–120
15
I
DD
4
3
2
1
0
10
NF
5
0
–25
L
C
I
DD
–20
–15
–10
–5
0
5
10
RF Input Power P
RF
(dBm)
Local Input Power P
LO
(dBm)
Total Current I
DD
(mA), Conversion Loss L
C
(dB),
3rd Order Distortio Input Intercept Point IIP
3
(dBm)
30
0
L
LO
25
–20
IIP
3
20
15
IM
3
V
DD
= 2.8 V, f
LO
= 895 to 985 MHz,
f
RF1
= 850 MHz, f
RF2
= 850.1 MHz,
–40
f
IF
= 90 MHz, P
RF
= –3 dBm,
P
LO
= –5 dBm
–60
10
–80
L
C
5
–100
I
DD
0
–120
800 810 820 830 840 850 860 870 880 890 900
RF Frequency f
RF
(MHz)
Remark
The graphs indicate nominal characteristics.
3rd Order Intermoduration Distortion IM
3
(dBc),
Local Leackage L
LO
(dBm)
TOTAL CURRENT, CONVERSION
LOSS, IIP
3
, IM
3
, LOCAL LEAKAGE,
vs. RF FREQUENCY
Preliminary Data Sheet P15014EJ1V0DS00
3rd Order Intermoduration Distortion IM
3
(dBc),
Local Leackage L
LO
(dBm)
TOTAL CURRENT, CONVERSION LOSS,
IIP
3
, NOISE FIGURE, IM
3
, LOCAL LEAKAGE
vs. LOCAL INPUT POWER
5
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