PRELIMINARY DATA SHEET
µ
PG2106TB,
µ
PG2110TB
L-BAND PA DRIVER AMPLIFIER
GaAs INTEGRATED CIRCUIT
DESCRIPTION
The
µ
PG2106TB and
µ
PG2110TB are GaAs MMIC for PA driver amplifier with variable gain function which were
developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with
3.0 V, having the high gain and low distortion.
The
µ
PG2106TB is for 800 MHz band application, and the
µ
PG2110TB is for 1.5 GHz band application.
FEATURES
•
•
•
•
•
•
: V
DD1
= V
DD2
= 3.0 V
: 889 to 960 MHz, 1429 to 1453 MHz@P
out
= +8 dBm
: P
adj1
=
−60
dBc TYP. @V
DD
= 3.0 V, P
out
= +8 dBm, V
AGC
= 2.5 V
External input and output matching
Low operation current
: I
DD
= 25 mA TYP. @V
DD
= 3.0 V, P
out
= +8 dBm, V
AGC
= 2.5 V
External input and output matching
Variable gain control function :
∆G
= 40 dB TYP. @V
AGC
= 0.5 to 2.5 V
External input and output matching
6-pin super minimold package
Low operation voltage
f
RF
Low distortion
APPLICATION
•
Digital Cellular : PDC, IS-136 etc.
ORDERING INFORMATION (PLAN)
Part Number
Package
6-pin super minimold
Supplying Form
Carrier tape width is 8 mm.
Qty 3 kp/reel.
µ
PG2106TB-E3
µ
PG2110TB-E3
Remark
To order evaluation samples, please contact your local NEC sales office. (Part number for sample
order:
µ
PG2106TB,
µ
PG2110TB)
ABSOLUTE MAXIMUM RATINGS (T
A
= +25
°
C)
Parameter
Supply Voltage
AGC Control Voltage
Input Power
Total Power Dissipation
Operating Ambient Temperature
Storage Temperature
Symbol
V
DD1
, V
DD2
V
AGC
P
in
P
tot
T
A
T
stg
Ratings
6.0
6.0
−8
140
Note
Unit
V
V
dBm
mW
°C
°C
−30
to +90
−35
to +150
Note
Mounted on a 50
×
50
×
1.6 mm double copper clad epoxy glass PWB, T
A
= +85
°C
Caution
The IC must be handled with care to prevent static discharge because its circuit composed of
GaAs HJ-FET.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P14318EJ1V0DS00 (1st edition)
Date Published October 1999 N CP(K)
Printed in Japan
©
1999
µ
PG2106TB,
µ
PG2110TB
[
µ
PG2106TB]
PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM
Pin No.
1
2
3
Connection
V
DD1
GND
V
DD2
& OUT
Pin No.
4
5
6
Connection
V
AGC
GND
IN
1
2
3
G1V
6
5
4
Top View
3
2
1
4
5
6
4
5
6
Bottom View
3
2
1
3
2
1
Top View
4
5
6
RECOMMENDED OPERATING CONDITIONS (T
A
= +25
°
C)
Parameter
Supply Voltage
Input Power
AGC Control Voltage
Symbol
V
DD1
, V
DD2
P
in
V
AGC
MIN.
+2.7
−
0
TYP.
+3.0
−18
−
MAX.
+3.3
−10
2.5
Unit
V
dBm
V
ELECTRICAL CHARACTERISTICS
(Unless otherwise specified, T
A
= +25
°
C, V
DD1
= V
DD2
= +3.0 V,
π
/4DQPSK modulated signal input, External
input and output matching)
Parameter
Operating Frequency
Power Gain
Total Current
Adjacent Channel
Power Leakage 1
Adjacent Channel
Power Leakage 2
Variable Gain Range
AGC Control Current
Symbol
f
G
p
I
DD
P
adj1
P
in
=
−18
dBm, V
AGC
= 2.5 V
P
out
= +8 dBm, V
AGC
= 2.5 V
P
out
= +8 dBm, V
AGC
= 2.5 V
∆f
=
±50
kHz, 21 kHz Band Width
P
out
= +8 dBm, V
AGC
= 2.5 V
∆f
=
±100
kHz, 21 kHz Band Width
P
in
=
−18
dBm, V
AGC
= 0.5 to 2.5 V
V
AGC
= 0.5 to 2.5 V
Test Conditions
MIN.
889
26
−
−
−
TYP.
−
30
25
−60
−70
MAX.
960
−
35
−55
−65
−
500
Unit
MHz
dB
mA
dBc
P
adj2
∆G
I
AGC
35
−
40
200
dB
µ
A
2
Preliminary Data Sheet P14318EJ1V0DS00
µ
PG2106TB,
µ
PG2110TB
[
µ
PG2110TB]
PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM
1
2
3
Pin No.
1
2
3
Connection
V
DD1
GND
V
DD2
& OUT
Pin No.
4
5
6
Connection
V
AGC
GND
IN
6
G1Y
5
4
Top View
3
2
1
4
5
6
4
5
6
Bottom View
3
2
1
3
2
1
Top View
4
5
6
RECOMMENDED OPERATING CONDITIONS (T
A
= +25
°
C)
Parameter
Supply Voltage
Input Power
AGC Control Voltage
Symbol
V
DD1
, V
DD2
P
in
V
AGC
MIN.
+2.7
−
0
TYP.
+3.0
−18
−
MAX.
+3.3
−10
2.5
Unit
V
dBm
V
ELECTRICAL CHARACTERISTICS
(Unless otherwise specified, T
A
= +25
°
C, V
DD1
= V
DD2
= +3.0 V,
π
/4DQPSK modulated signal input, External
input and output matching)
Parameter
Operating Frequency
Power Gain
Total Current
Adjacent Channel
Power Leakage 1
Adjacent Channel
Power Leakage 2
Variable Gain Range
AGC Control Current
Symbol
f
G
p
I
DD
P
adj1
P
in
=
−18
dBm, V
AGC
= 2.5 V
P
out
= +8 dBm, V
AGC
= 2.5 V
P
out
= +8 dBm, V
AGC
= 2.5 V
∆f
=
±50
kHz, 21 kHz Band Width
P
out
= +8 dBm, V
AGC
= 2.5 V
∆f
=
±100
kHz, 21 kHz Band Width
P
in
=
−18
dBm, V
AGC
= 0.5 to 2.5 V
V
AGC
= 0.5 to 2.5 V
Test Conditions
MIN.
1429
24
−
−
−
TYP.
−
27
25
−60
−70
MAX.
1453
−
35
−55
−65
−
500
Unit
MHz
dB
mA
dBc
P
adj2
∆G
I
AGC
35
−
40
200
dB
µ
A
Preliminary Data Sheet P14318EJ1V0DS00
3
Microcontroller MCU
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