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BDX33B

Description
10A, 80V, NPN, Si, POWER TRANSISTOR, TO-220, TO-220, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size128KB,7 Pages
ManufacturerJ.W. Miller ( Bourns )
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BDX33B Overview

10A, 80V, NPN, Si, POWER TRANSISTOR, TO-220, TO-220, 3 PIN

BDX33B Parametric

Parameter NameAttribute value
MakerJ.W. Miller ( Bourns )
Parts packaging codeSFM
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)10 A
Collector-emitter maximum voltage80 V
ConfigurationDARLINGTON
Minimum DC current gain (hFE)750
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
BDX33, BDX33A, BDX33B, BDX33C, BDX33D
NPN SILICON POWER DARLINGTONS
Copyright © 1997, Power Innovations Limited, UK
AUGUST 1993 - REVISED MARCH 1997
q
Designed for Complementary Use with
BDX34, BDX34A, BDX34B, BDX34C and
BDX34D
70 W at 25°C Case Temperature
B
TO-220 PACKAGE
(TOP VIEW)
q
q
q
1
2
3
10 A Continuous Collector Current
Minimum h
FE
of 750 at 3 V, 3 A
C
E
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings
at 25°C case temperature (unless otherwise noted)
RATING
BDX33
BDX33A
Collector-base voltage (I
E
= 0)
BDX33B
BDX33C
BDX33D
BDX33
BDX33A
Collector-emitter voltage (I
B
= 0)
BDX33B
BDX33C
BDX33D
Emitter-base voltage
Continuous collector current
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 1)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 2)
Operating free air temperature range
Storage temperature range
Operating free-air temperature range
NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.
2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
V
EBO
I
C
I
B
P
tot
P
tot
T
J
T
stg
T
A
V
CEO
V
CBO
SYMBOL
VALUE
45
60
80
100
120
45
60
80
100
120
5
10
0.3
70
2
-65 to +150
-65 to +150
-65 to +150
V
A
A
W
W
°C
°C
°C
V
V
UNIT
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1

BDX33B Related Products

BDX33B BDX33 BDX33D
Description 10A, 80V, NPN, Si, POWER TRANSISTOR, TO-220, TO-220, 3 PIN 10A, 45V, NPN, Si, POWER TRANSISTOR, TO-220, TO-220, 3 PIN 10A, 120V, NPN, Si, POWER TRANSISTOR, TO-220, TO-220, 3 PIN
Maker J.W. Miller ( Bourns ) J.W. Miller ( Bourns ) J.W. Miller ( Bourns )
Parts packaging code SFM SFM SFM
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3 3
Reach Compliance Code unknown unknow unknow
ECCN code EAR99 EAR99 EAR99
Shell connection COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 10 A 10 A 10 A
Collector-emitter maximum voltage 80 V 45 V 120 V
Configuration DARLINGTON DARLINGTON DARLINGTON
Minimum DC current gain (hFE) 750 750 750
JEDEC-95 code TO-220AB TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1
Number of terminals 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
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