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MT48LC2M32B2P-5

Description
Synchronous DRAM, 2MX32, 4.5ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-86
Categorystorage    storage   
File Size2MB,69 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
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MT48LC2M32B2P-5 Overview

Synchronous DRAM, 2MX32, 4.5ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-86

MT48LC2M32B2P-5 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicron Technology
Parts packaging codeTSOP
package instructionTSOP2, TSSOP86,.46,20
Contacts86
Reach Compliance Codecompliant
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time4.5 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)200 MHz
I/O typeCOMMON
interleaved burst length1,2,4,8
JESD-30 codeR-PDSO-G86
JESD-609 codee3
length22.22 mm
memory density67108864 bit
Memory IC TypeSYNCHRONOUS DRAM
memory width32
Number of functions1
Number of ports1
Number of terminals86
word count2097152 words
character code2000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize2MX32
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Encapsulate equivalent codeTSSOP86,.46,20
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)260
power supply3.3 V
Certification statusNot Qualified
refresh cycle4096
Maximum seat height1.2 mm
self refreshYES
Continuous burst length1,2,4,8,FP
Maximum standby current0.002 A
Maximum slew rate0.28 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperature30
width10.16 mm
64Mb: x32 SDRAM
Features
Synchronous DRAM
MT48LC2M32B2 – 512K x 32 x 4 banks
For the latest data sheet, refer to Micron’s Web site
Features
• PC100 functionality
• Fully synchronous; all signals registered on positive
edge of system clock
• Internal pipelined operation; column address can be
changed every clock cycle
• Internal banks for hiding row access/precharge
• Programmable burst lengths: 1, 2, 4, 8, or full page
• Auto precharge, includes concurrent auto precharge,
and auto refresh modes
• Self refresh mode (not available on AT devices)
• Refresh
64ms, 4,096-cycle refresh (15.6µs/row)
(commercial, industrial)
16ms, 4,096-cycle refresh (3.9µs/row)
(automotive)
• LVTTL-compatible inputs and outputs
• Single +3.3V ±0.3V power supply
• Supports CAS latency (CL) of 1, 2, and 3
Table 1:
Address Table
2 Meg x 32
Configuration
Refresh count
Row addressing
Bank addressing
Column addressing
512K x 32 x 4 banks
4K
2K (A0–A10)
4 (BA0, BA1)
256 (A0–A7)
Table 2:
Key Timing Parameters
CL = CAS (READ) latency
Access
Time
CL = 3
4.5ns
5ns
5.5ns
5.5ns
Speed
Grade
-5
-55
-6
-7
Clock
Frequency
200 MHz
183 MHz
166 MHz
143 MHz
Setup
Time
1.5ns
1.5ns
1.5ns
2ns
Hold
Time
1ns
1ns
1ns
1ns
Options
Marking
Table 3:
64Mb (x32) SDRAM Part Number
Architecture
2 Meg x 32
2 Meg x 32
2 Meg x 32
Part Number
MT48LC2M32B2TG
MT48LC2M32B2P
MT48LC2M32B2B5
1
• Configuration
2 Meg x 32 (512K x 32 x 4 banks)
2M32B2
1
• Plastic package – OCPL
86-pin TSOP II (400 mil)
TG
86-pin TSOP II (400 mil) Pb-free
P
90-ball VFBGA (8mm x 13mm) Pb-free
B5
• Timing (cycle time)
5ns (200 MHz)
-5
5.5ns (183 MHz)
-55
6ns (166 MHz)
-6
7ns (143 MHz)
-7
• Die revision
:G
• Operating temperature range
Commercial (0° to +70°C)
None
Industrial (–40°C to +85°C)
IT
2
Automotive (–40°C to +105°C)
AT
3
Notes: 1. Off-center parting line.
2. Available on -6 and -7.
3. Contact Micron for product availability.
Notes: 1. FBGA Device Decode: http://
www.micron.com/support/FBGA/FBGA.asp
Part Number Example:
MT48LC2M32B2P-7:G
PDF: 09005aef811ce1fe/Source: 09005aef811ce1d5
64MSDRAMx32_1.fm - Rev. J 12/08 EN
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2001 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.

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Description Synchronous DRAM, 2MX32, 4.5ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-86 Synchronous DRAM, 2MX32, 5.5ns, CMOS, PBGA90 Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-86 Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-86 Synchronous DRAM, 2MX32, 5ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-86 Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 INCH, PLASTIC, TSOP-86
Is it Rohs certified? conform to conform to conform to conform to conform to incompatible
package instruction TSOP2, TSSOP86,.46,20 FBGA, BGA90,9X15,32 TSOP2, TSSOP86,.46,20 TSOP2, TSSOP86,.46,20 TSOP2, TSSOP86,.46,20 0.400 INCH, PLASTIC, TSOP-86
Reach Compliance Code compliant compliant compliant unknown compliant not_compliant
Maximum access time 4.5 ns 5.5 ns 5.5 ns 5.5 ns 5 ns 5.5 ns
Maximum clock frequency (fCLK) 200 MHz 166 MHz 143 MHz 166 MHz 182 MHz 166 MHz
I/O type COMMON COMMON COMMON COMMON COMMON COMMON
interleaved burst length 1,2,4,8 1,2,4,8 1,2,4,8 1,2,4,8 1,2,4,8 1,2,4,8
JESD-30 code R-PDSO-G86 R-PBGA-B90 R-PDSO-G86 R-PDSO-G86 R-PDSO-G86 R-PDSO-G86
memory density 67108864 bit 67108864 bit 67108864 bit 67108864 bit 67108864 bit 67108864 bit
Memory IC Type SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM
memory width 32 32 32 32 32 32
Number of terminals 86 90 86 86 86 86
word count 2097152 words 2097152 words 2097152 words 2097152 words 2097152 words 2097152 words
character code 2000000 2000000 2000000 2000000 2000000 2000000
Maximum operating temperature 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
organize 2MX32 2MX32 2MX32 2MX32 2MX32 2MX32
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code TSOP2 FBGA TSOP2 TSOP2 TSOP2 TSOP2
Encapsulate equivalent code TSSOP86,.46,20 BGA90,9X15,32 TSSOP86,.46,20 TSSOP86,.46,20 TSSOP86,.46,20 TSSOP86,.46,20
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE, THIN PROFILE GRID ARRAY, FINE PITCH SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE
power supply 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
refresh cycle 4096 4096 4096 4096 4096 4096
Continuous burst length 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP
Maximum standby current 0.002 A 0.002 A 0.002 A 0.002 A 0.002 A 0.002 A
Maximum slew rate 0.28 mA 0.225 mA 0.225 mA 0.225 mA 0.26 mA 0.225 mA
Nominal supply voltage (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
surface mount YES YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal form GULL WING BALL GULL WING GULL WING GULL WING GULL WING
Terminal pitch 0.5 mm 0.8 mm 0.5 mm 0.5 mm 0.5 mm 0.5 mm
Terminal location DUAL BOTTOM DUAL DUAL DUAL DUAL
Maker Micron Technology - Micron Technology Micron Technology Micron Technology Micron Technology
Parts packaging code TSOP - TSOP TSOP TSOP TSOP
Contacts 86 - 86 86 86 86
ECCN code EAR99 - EAR99 EAR99 EAR99 EAR99
access mode FOUR BANK PAGE BURST - FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Other features AUTO/SELF REFRESH - AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH
JESD-609 code e3 - e3 e3 e3 e0
length 22.22 mm - 22.22 mm 22.22 mm 22.22 mm 22.22 mm
Number of functions 1 - 1 1 1 1
Number of ports 1 - 1 1 1 1
Operating mode SYNCHRONOUS - SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Peak Reflow Temperature (Celsius) 260 - 260 260 260 235
Maximum seat height 1.2 mm - 1.2 mm 1.2 mm 1.2 mm 1.2 mm
self refresh YES - YES YES YES YES
Maximum supply voltage (Vsup) 3.6 V - 3.6 V 3.6 V 3.6 V 3.6 V
Minimum supply voltage (Vsup) 3 V - 3 V 3 V 3 V 3 V
Terminal surface Matte Tin (Sn) - Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Tin/Lead (Sn/Pb)
Maximum time at peak reflow temperature 30 - 30 30 30 30
width 10.16 mm - 10.16 mm 10.16 mm 10.16 mm 10.16 mm

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