without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. 00A
11/18/02
1
IS61LV10248
ISSI
48-pin Mini BGA (M ) (9mm x 11mm)
1
2
3
4
5
6
®
PIN CONFIGURATION
36 mini BGA (B) (9mm x 11mm)
1
2
3
4
5
6
A
B
C
D
E
F
G
H
A0
I/O4
I/O5
GND
Vcc
I/O6
I/O7
A9
A1
A2
NC
WE
A19
A3
A4
A5
A6
A7
A8
I/O0
I/O1
Vcc
GND
A
B
C
D
E
F
G
H
NC
NC
NC
GND
Vcc
NC
NC
A18
OE
NC
NC
NC
NC
NC
NC
A8
A0
A3
A5
A17
NC
A14
A12
A9
A1
A4
A6
A7
A16
A15
A13
A10
A2
CE
I/O1
I/O3
I/O4
I/O5
WE
A11
NC
I/O0
I/O2
Vcc
GND
I/O6
I/O7
A19
A18
OE
A10
CE
A11
A17
A16
A12
A15
A13
I/O2
I/O3
A14
PIN DESCRIPTIONS
A0-A19
CE
OE
WE
I/O0-I/O7
Vcc
GND
NC
Address Inputs
Chip Enable Input
Output Enable Input
Write Enable Input
Data Input / Output
Power
Ground
No Connection
44-pin TSOP (Type II )
NC
NC
A0
A1
A2
A3
A4
CE
I/O0
I/O1
Vcc
GND
I/O2
I/O3
WE
A5
A6
A7
A8
A9
NC
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
NC
NC
NC
A18
A17
A16
A15
OE
I/O7
I/O6
GND
Vcc
I/O5
I/O4
A14
A13
A12
A11
A10
A19
NC
NC
2
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. 00A
11/18/02
IS61LV10248
ISSI
CE
H
L
L
L
OE
X
H
L
X
I/O Operation Vcc Current
High-Z
High-Z
D
OUT
D
IN
I
SB
1
, I
SB
2
I
CC
I
CC
I
CC
®
TRUTH TABLE
Mode
WE
Not Selected
X
(Power-down)
Output Disabled H
Read
H
Write
L
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
Vcc
T
STG
P
T
Parameter
Terminal Voltage with Respect to GND
Vcc Relates to GND
Storage Temperature
Power Dissipation
Value
–0.5 to Vcc + 0.5
–.3 to 4.0
–65 to +150
1.0
Unit
V
V
°C
W
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage
to the device. This is a stress rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect reliability.
OPERATING RANGE
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
–40°C to +85°C
V
CC
3.3V +10%, -5%
3.3V +10%, -5%
CAPACITANCE
(1,2)
Symbol
C
IN
C
I/O
Parameter
Input Capacitance
Input/Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Max.
6
8
Unit
pF
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25°C, f = 1 MHz, Vcc = 3.3V.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. 00A
11/18/02
3
IS61LV10248
ISSI
Test Conditions
V
CC
= Min., I
OH
= –4.0 mA
V
CC
= Min., I
OL
= 8.0 mA
Min.
2.4
—
2.2
–0.3
GND
≤
V
IN
≤
V
CC
GND
≤
V
OUT
≤
V
CC
, Outputs Disabled
Com.
Ind.
Com.
Ind.
–1
–5
–1
–5
Max.
—
0.4
V
CC
+ 0.3
0.8
1
5
1
5
V
V
V
V
µA
µA
®
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol Parameter
V
OH
V
OL
V
IH
V
IL
I
LI
I
LO
Note:
1. V
IL
= –3.0V for pulse width less than 10 ns.
Unit
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
(1)
Input Leakage
Output Leakage
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
Symbol
I
CC
I
SB
1
Parameter
Vcc Dynamic Operating
Supply Current
TTL Standby Current
(TTL Inputs)
CMOS Standby
Current (CMOS Inputs)
Test Conditions
V
CC
= Max.,
Com.
I
OUT
= 0 mA, f = f
MAX
Ind.
V
CC
= Max.,
V
IN
= V
IH
or V
IL
CE
≥
V
IH
, f = 0
Com.
Ind.
-8
Min. Max.
—
—
—
—
—
—
110
120
30
35
20
25
-10
Min. Max.
—
—
—
—
—
—
100
110
30
35
20
25
-12
Min. Max.
—
—
—
—
—
—
90
100
30
35
20
25
Unit
mA
mA
I
SB
2
V
CC
= Max.,
Com.
CE
≥
V
CC
– 0.2V,
Ind.
V
IN
≥
V
CC
– 0.2V, or
V
IN
≤
0.2V, f = 0
mA
Note:
1.
At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
4
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. 00A
11/18/02
IS61LV10248
ISSI
-8
Min. Max.
8
—
3
—
—
—
0
—
3
0
—
—
8
—
8
3.5
3
—
3
—
—
8
-10
Min. Max.
10
—
3
—
—
—
0
0
3
0
—
—
10
—
10
4
4
—
4
—
—
10
-12
Min. Max.
12
—
3
—
—
—
0
0
3
0
—
—
12
—
12
5
5
—
6
—
—
12
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
®
READ CYCLE SWITCHING CHARACTERISTICS
(1)
(Over Operating Range)
Symbol
Parameter
Read Cycle Time
Address Access Time
Output Hold Time
CE
Access Time
OE
Access Time
OE
to High-Z Output
OE
to Low-Z Output
CE
to High-Z Output
CE
to Low-Z Output
Power Up Time
Power Down Time
t
RC
t
AA
t
OHA
t
ACE
t
DOE
t
HZOE
(2)
t
LZOE
(2)
t
HZCE
(2
t
LZCE
(2)
t
PU
t
PD
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of
1.5V, input pulse levels of 0V to 3.0V and output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-stat voltage.
Integrated Silicon Solution, Inc. — www.issi.com —
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