DPS128M8N-12C datasheet, PDF - EEWORLD Datasheet

DPS128M8N-12C: DescriptionStandard SRAM, 128KX8, 120ns, CMOS, CDIP32, SIDE BRAZED, CERAMIC, DIP-32; Categorystorage storage; File Size162KB，7 Pages; ManufacturerTwilight Technology Inc.

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DPS128M8N-12C Overview

Standard SRAM, 128KX8, 120ns, CMOS, CDIP32, SIDE BRAZED, CERAMIC, DIP-32

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Twilight Technology Inc.
Parts packaging code	DIP
package instruction	DIP, DIP32,.6
Contacts	32
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum access time	120 ns
I/O type	COMMON
JESD-30 code	R-CDIP-T32
length	40.64 mm
memory density	1048576 bit
Memory IC Type	STANDARD SRAM
memory width	8
Number of functions	1
Number of terminals	32
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	128KX8
Output characteristics	3-STATE
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP
Encapsulate equivalent code	DIP32,.6
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
Maximum seat height	4.191 mm
Maximum standby current	0.00009 A
Minimum standby current	2 V
Maximum slew rate	0.075 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	15.24 mm

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