Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use
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(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via
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Thank you for your cooperation and
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Kind regards,
Team Nexperia
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
FEATURES
•
Low current (max. 50 mA)
•
High voltage (max. 300 V).
APPLICATIONS
•
Video output stages.
DESCRIPTION
NPN high-voltage transistor in a SOT89 plastic package.
PNP complements: BF621 and BF623.
PINNING
PIN
1
2
3
emitter
collector
base
BF620; BF622
DESCRIPTION
2
MARKING
TYPE NUMBER
BF620
BF622
MARKING CODE
DC
DA
3
2
1
3
1
sym042
Fig.1 Simplified outline (SOT89) and symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
BF620
BF622
SC-62
DESCRIPTION
plastic surface mounted package; collector pad for good heat
transfer; 3 leads
VERSION
SOT89
2004 Dec 14
2
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
BF620
BF622
V
CEO
collector-emitter voltage
BF620
BF622
V
EBO
I
C
I
CM
I
BM
P
tot
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
T
amb
≤
25
°C
note 1
note 2
note 3
T
stg
T
j
T
amb
Notes
storage temperature
junction temperature
ambient temperature
−
−
−
open collector
open base
−
−
−
−
−
−
PARAMETER
collector-base voltage
CONDITIONS
open emitter
−
−
BF620; BF622
MIN.
MAX.
300
250
300
250
5
50
100
50
0.5
0.8
1.1
+150
150
+150
UNIT
V
V
V
V
V
mA
mA
mA
W
W
W
°C
°C
°C
−65
−
−65
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint.
2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm
2
.
3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm
2
.
2004 Dec 14
3
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
BF620; BF622
1600
P
tot
(mW)
1200
(1)
006aaa238
800
(2)
(3)
400
0
−75
−25
25
75
125
175
T
amb
(°C)
(1) FR4 PCB; 6 cm
2
mounting pad for collector.
(2) FR4 PCB; 1 cm
2
mounting pad for collector.
(3) FR4 PCB; standard footprint.
Fig.2 Power derating curves.
2004 Dec 14
4
51mcu
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