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DTA143EUA

Description
RF SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size204KB,3 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
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DTA143EUA Overview

RF SMALL SIGNAL TRANSISTOR

DTA143EUA Parametric

Parameter NameAttribute value
MakerTaiwan Semiconductor
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
Other featuresBUILT IN BIAS RESISTANCE RATIO IS 1
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)30
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
Base Number Matches1
DTA143 EM/EE/EUA/ECA/ESA
PNP Small Signal Transistor
Small Signal Product
Features
Built-in bias resistors enable the configuration of an inverter
circuit without connecting external input resistor
(see equivalent circuit).
The bias resistors consist of thin-film resistors with
complete isolation to allow negative biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
Only the on/off conditions need to be set for
operation, marking device design easy.
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code.
Equivalent Circuit
Ordering Information (example)
Part No.
DTA143 EM
Package
SOT-723
Packing
8K / 7" Reel
Packing code
RM
Packing code
(Green)
RMG
Marking
13
Manufacture code
M0
Note : Detail please see "Ordering Information(detail, example)" below.
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Parameter
Power Dissipation
Supply Voltage
Input Voltage
Output Current
Junction and Storage Temperature Range
Symbol
P
D
V
CC
V
IN
I
O
T
J
, T
STG
Value
EM
100
EE
150
EUA / ECA
200
-50
-30 ~ +10
-100
-55 to + 150
ESA
300
Unit
mW
V
V
mA
°C
Notes : 1. Valid provided that electrodes are kept at ambient temperature
Electrical Characteristics
Parameter
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
R
1
R
2
/R
1
f
T
Min
-0.5
Typ
Max
-3
-0.3
-1.8
-0.5
Condtion
V
CC
= -5V, I
O
= -100μA
V
O
= -0.3V, I
O
= -20mA
I
O
/ I
I
= -10mA / -0.5mA
V
I
= -5V
V
CC
= -50V, V
I
=0
V
O
= -5V, I
O
= -10mA
Unit
V
V
mA
μA
KΩ
30
3.29
0.8
4.7
1
250
6.11
1.2
V
O
= -10V, I
O
= -5mA, f=100MHz
MHz
Version : B13

DTA143EUA Related Products

DTA143EUA DTA143ECA DTA143EE DTA143EM
Description RF SMALL SIGNAL TRANSISTOR RF SMALL SIGNAL TRANSISTOR RF SMALL SIGNAL TRANSISTOR RF SMALL SIGNAL TRANSISTOR
Maker Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor -
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 -
Reach Compliance Code unknown unknow unknow -
Other features BUILT IN BIAS RESISTANCE RATIO IS 1 BUILT IN BIAS RESISTANCE RATIO IS 1 BUILT IN BIAS RESISTANCE RATIO IS 1 -
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A -
Collector-emitter maximum voltage 50 V 50 V 50 V -
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR -
Minimum DC current gain (hFE) 30 30 30 -
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 -
Number of components 1 1 1 -
Number of terminals 3 3 3 -
Minimum operating temperature -55 °C -55 °C -55 °C -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR RECTANGULAR -
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE -
Polarity/channel type PNP PNP PNP -
surface mount YES YES YES -
Terminal form GULL WING GULL WING GULL WING -
Terminal location DUAL DUAL DUAL -
transistor applications SWITCHING SWITCHING SWITCHING -
Transistor component materials SILICON SILICON SILICON -
Nominal transition frequency (fT) 250 MHz 250 MHz 250 MHz -
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