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DTA143ZE

Description
PNP Small Signal Transistor
CategoryDiscrete semiconductor    The transistor   
File Size327KB,5 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
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DTA143ZE Overview

PNP Small Signal Transistor

DTA143ZE Parametric

Parameter NameAttribute value
MakerTaiwan Semiconductor
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknow
Other featuresBUILT IN BIAS RESISTANCE RATIO IS 10
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)80
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
DTA143 ZM/ZE/ZUA/ZCA/ZSA
Taiwan Semiconductor
Small Signal Product
PNP Small Signal Transistor
FEATURES
- Built-in bias resistors enable the configuration of an inverter
circuit without connecting external input resistor
(see equivalent circuit).
- The bias resistors consist of thin-film resistors with
complete isolation to allow negative biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
- Only the on/off conditions need to be set for
operation, marking device design easy.
- Packing code with suffix "G" means
green compound (halogen-free)
Equivalent Circuit
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Power Dissipation
Supply Voltage
Input Voltage
Output Current
Junction and Storage Temperature Range
SYMBOL
P
D
V
CC
V
IN
I
O
T
J
, T
STG
ZM
100
ZE
150
VALUE
ZUA / ZCA
200
-50
-30 ~ +5
-100
-55 to + 150
ZSA
300
UNIT
mW
V
V
mA
°C
Notes: Valid provided that electrodes are kept at ambient temperature
PARAMETER
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
SYMBOL
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
R
1
R
2
/R
1
f
T
80
3.29
8
4.7
10
250
6.11
12
V
O
= -10V, I
O
= 5mA, f=100MHz
MHz
MIN
-0.5
-1.3
-0.3
-1.8
-0.5
TYP
MAX
CONDITION
V
CC
= -5V, I
O
= -100μA
V
O
= -0.3V, I
O
= -5mA
I
O
/ I
I
= -5mA / -0.25mA
V
I
= -5V
V
CC
= -50V, V
I
=0
V
O
= -5V, I
O
= -10mA
kΩ
UNIT
V
V
mA
μA
Document Number: DS_S1412026
Version: C14

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