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HS1ML

Description
SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size351KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
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HS1ML Overview

SIGNAL DIODE

HS1ML Parametric

Parameter NameAttribute value
stateACTIVE
Diode typeSignal diode
creat by ART
HS1AL - HS1ML
1.0AMP High Efficient Surface Mount Rectifiers
Sub SMA
Features
Glass passivated junction chip.
For surface mounted application
Low forward voltage drop
Low profile package
Built-in stain relief, ideal for automatic
placement
Fast switching for high efficiency
High temperature soldering:
260℃/10 seconds at terminals
Meet MSL level 1, per J-STD-020D,
lead free maximum peak of 260℃
Plastic material used carries Underwriters
Laboratory Classification 94V-0
Green compound with suffix "G" on packing
code & prefix "G" on datecode
Mechanical Data
Cases: Molded plastic
Terminal: Pure tin plated, lead free
Polarity: Indicated by cathode band
Weight: 0.0196 grams
Ordering Information (example)
Part No.
HS1AL
Package
Sub-SMA
Packing
3K / 7" REEL
Packing
code
RV
Green Compound
Packing code
RVG
Maximum Ratings and Electrical Characteristics
Rating at 25
ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Marking Code
Maximum Average Forward Rectified Current
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method)
Maximum Instantaneous Forward Voltage (Note 1)
@1A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@ T
A
=25
@ T
A
=125
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Trr
Cj
R
θJA
T
J
T
STG
HS
1AL
50
35
50
HAL
HS
1BL
100
70
100
HBL
HS
1DL
200
140
200
HDL
HS
1FL
300
210
300
HFL
1
30
HS
1GL
400
280
400
HGL
HS
1JL
600
420
600
HJL
HS
1KL
800
560
800
HKL
HS
1ML
1000
700
1000
HML
Units
V
V
V
A
A
1.0
5
150
50
20
100
1.3
1.7
V
uA
Maximum Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 3)
Typical Thermal Resistance
Operating Junction Temperature Range
Storage Temperature Range
Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle
75
15
O
nS
pF
C/W
O
O
- 55 to + 150
- 55 to + 150
C
C
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0Volts.
Version:A12

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HS1ML HS1AL HS1BL HS1DL HS1FL HS1GL HS1JL HS1KL
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state ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE - ACTIVE ACTIVE
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