UPD4482182GF-A50Y-A datasheet, PDF

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UPD4482182GF-A50Y-A: DescriptionIC,SYNC SRAM,512KX18,CMOS,QFP,100PIN,PLASTIC; Categorystorage storage; File Size267KB，28 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/; Environmental Compliance

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UPD4482182GF-A50Y-A Overview

IC,SYNC SRAM,512KX18,CMOS,QFP,100PIN,PLASTIC

UPD4482182GF-A50Y-A Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Renesas Electronics Corporation
Reach Compliance Code	unknown

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DATA SHEET

MOS INTEGRATED CIRCUIT

PD4482162, 4482182, 4482322, 4482362

8M-BIT CMOS SYNCHRONOUS FAST SRAM

PIPELINED OPERATION

SINGLE CYCLE DESELECT

Description

The

PD4482162 is a 524,288-word by 16-bit, the

PD4482182 is a 524,288-word by 18-bit,

PD4482322 is a 262,144-

word by 32-bit and the

PD4482362 is a 262,144-word by 36-bit synchronous static RAM fabricated with advanced CMOS

technology using Full-CMOS six-transistor memory cell.

The

PD4482162,

PD4482182,

PD4482322 and

PD4482362 integrates unique synchronous peripheral circuitry, 2-bit

burst counter and output buffer as well as SRAM core. All input registers are controlled by a positive edge of the single

clock input (CLK).

The

PD4482162,

PD4482182,

PD4482322 and

PD4482362 are suitable for applications which require synchronous

operation, high speed, low voltage, high density and wide bit configuration, such as cache and buffer memory.

ZZ has to be set LOW at the normal operation. When ZZ is set HIGH, the SRAM enters Power Down State (“Sleep”). In

the “Sleep” state, the SRAM internal state is preserved. When ZZ is set LOW again, the SRAM resumes normal operation.

The

PD4482162,

PD4482182,

PD4482322 and

PD4482362 are packaged in 100-pin PLASTIC LQFP with a 1.4 mm

package thickness for high density and low capacitive loading.

Features

•

3.3 V or 2.5 V core supply

•

Synchronous operation

•

Operating temperature : T

= 0 to 70

°C

(-A44, -A50, -A60, -C60)

−40

+85 °C

(-A44Y, -A50Y, -A60Y, -C60Y)

•

Internally self-timed write control

•

Burst read / write : Interleaved burst and linear burst sequence

•

Fully registered inputs and outputs for pipelined operation

•

Single-Cycle deselect timing

•

All registers triggered off positive clock edge

•

3.3 V or 2.5 V LVTTL Compatible : All inputs and outputs

•

Fast clock access time : 2.8 ns (225 MHz), 3.1 ns (200 MHz), 3.5 ns (167 MHz)

•

Asynchronous output enable : /G

•

Burst sequence selectable : MODE

•

Sleep mode : ZZ (ZZ = Open or Low : Normal operation)

•

Separate byte write enable : /BW1 to /BW4, /BWE (

PD4482322,

PD4482362)

/BW1, /BW2, /BWE (

PD4482162,

PD4482182)

Global write enable : /GW

•

Three chip enables for easy depth expansion

•

Common I/O using three state outputs

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. M14522EJ4V0DS00 (4th edition)

Date Published February 2006 NS CP(K)

Printed in Japan

The mark <R> shows major revised points.

2000

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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