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BDX34CBU

Description
10A, 100V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size360KB,61 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

BDX34CBU Overview

10A, 100V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

BDX34CBU Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerON Semiconductor
Parts packaging codeTO-220AB
package instructionPLASTIC, TO-220AB, 3 PIN
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)10 A
Collector-emitter maximum voltage100 V
ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)750
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)3 MHz
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Darlington Complementary
Silicon Power Transistors
. . . designed for general purpose and low speed switching applications.
High DC Current Gain — hFE = 2500 (typ.) at IC = 4.0
Collector–Emitter Sustaining Voltage at 100 mAdc
VCEO(sus) = 80 Vdc (min.) — BDX33B, 34B
VCEO(sus) =
100 Vdc (min.) — BDX33C, 34C
Low Collector–Emitter Saturation Voltage
VCE(sat) = 2.5 Vdc (max.) at IC = 3.0 Adc — BDX33B, 33C/34B, 34C
Monolithic Construction with Build–In Base–Emitter Shunt resistors
TO–220AB Compact Package
BDX33B
BDX33C*
BDX34B
BDX34C*
*Motorola Preferred Device
NPN
PNP
MAXIMUM RATINGS
Rating
Symbol
VCEO
VCB
VEB
IC
IB
BDX33B
BDX34B
80
80
BDX33C
BDX34C
100
100
Unit
Vdc
Vdc
Vdc
Adc
Adc
DARLINGTON
10 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
80 – 100 VOLTS
70 WATTS
PD, POWER DISSIPATION (WATTS)
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Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
5.0
10
15
Collector Current — Continuous
Peak
Base Current
0.25
Total Device Dissipation
@ TC = 25
_
C
Derate above 25
_
C
PD
70
0.56
Watts
W/
_
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to + 150
_
C
THERMAL CHARACTERISTICS
Characteristic
CASE 221A–06
TO–220AB
Symbol
R
θJC
Max
Unit
Thermal Resistance, Junction to Case
1.78
_
C/W
80
60
40
20
0
0
20
40
60
80
100
120
TC, CASE TEMPERATURE (°C)
140
160
Figure 1. Power Derating
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 7
Motorola Bipolar Power Transistor Device Data
3–217
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