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BF720TA

Description
Power Bipolar Transistor, 0.05A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
CategoryDiscrete semiconductor    The transistor   
File Size47KB,1 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
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BF720TA Overview

Power Bipolar Transistor, 0.05A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin

BF720TA Parametric

Parameter NameAttribute value
MakerZetex Semiconductors
package instructionSMALL OUTLINE, R-PDSO-G4
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)0.05 A
Collector-based maximum capacity3 pF
Collector-emitter maximum voltage300 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
VCEsat-Max0.6 V

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Description Power Bipolar Transistor, 0.05A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin Power Bipolar Transistor, 0.05A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin Power Bipolar Transistor, 0.05A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin Power Bipolar Transistor, 0.05A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin Power Bipolar Transistor, 0.05A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
Maker Zetex Semiconductors Zetex Semiconductors Zetex Semiconductors Zetex Semiconductors Zetex Semiconductors
package instruction SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Shell connection COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 0.05 A 0.05 A 0.05 A 0.05 A 0.05 A
Collector-emitter maximum voltage 300 V 250 V 300 V 250 V 250 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 50 50 50 50 50
JESD-30 code R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4
Number of components 1 1 1 1 1
Number of terminals 4 4 4 4 4
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz
VCEsat-Max 0.6 V - 0.6 V 0.6 V 0.6 V
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