BF722 datasheet, PDF - EEWORLD Datasheet

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BF722: DescriptionPower Bipolar Transistor, 0.05A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin; CategoryDiscrete semiconductor The transistor; File Size47KB，1 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/

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BF722 Overview

Power Bipolar Transistor, 0.05A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin

BF722 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Zetex Semiconductors
package instruction	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	0.05 A
Collector-emitter maximum voltage	250 V
Configuration	SINGLE
Minimum DC current gain (hFE)	50
JESD-30 code	R-PDSO-G4
JESD-609 code	e0
Humidity sensitivity level	1
Number of components	1
Number of terminals	4
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Maximum power consumption environment	1.5 W
Maximum power dissipation(Abs)	1.5 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz

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BF722 Related Products

	BF722	BF720TC	BF722TC	BF722TA	BF720TA
Description	Power Bipolar Transistor, 0.05A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin	Power Bipolar Transistor, 0.05A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin	Power Bipolar Transistor, 0.05A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin	Power Bipolar Transistor, 0.05A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin	Power Bipolar Transistor, 0.05A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
Maker	Zetex Semiconductors	Zetex Semiconductors	Zetex Semiconductors	Zetex Semiconductors	Zetex Semiconductors
package instruction	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	0.05 A	0.05 A	0.05 A	0.05 A	0.05 A
Collector-emitter maximum voltage	250 V	300 V	250 V	250 V	300 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	50	50	50	50	50
JESD-30 code	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4
Number of components	1	1	1	1	1
Number of terminals	4	4	4	4	4
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz
VCEsat-Max	-	0.6 V	0.6 V	0.6 V	0.6 V

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