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SDF4NA100SXHVN

Description
Power Field-Effect Transistor, 4.4A I(D), 1000V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size59KB,1 Pages
ManufacturerSolitron Devices Inc.
Download Datasheet Parametric View All

SDF4NA100SXHVN Overview

Power Field-Effect Transistor, 4.4A I(D), 1000V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, 3 PIN

SDF4NA100SXHVN Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerSolitron Devices Inc.
Parts packaging codeTO-3-3L
package instructionFLANGE MOUNT, O-MBFM-P2
Contacts3
Reach Compliance Codeunknown
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage1000 V
Maximum drain current (ID)4.4 A
Maximum drain-source on-resistance4 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeO-MBFM-P2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power consumption environment150 W
Maximum pulsed drain current (IDM)17.6 A
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Maximum off time (toff)77 ns
Maximum opening time (tons)43 ns
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