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WED8L24514V12BC

Description
SRAM Module, 512KX24, 12ns, CMOS, PBGA119, BGA-119
Categorystorage    storage   
File Size113KB,5 Pages
ManufacturerWhite Microelectronics
Download Datasheet Parametric Compare View All

WED8L24514V12BC Overview

SRAM Module, 512KX24, 12ns, CMOS, PBGA119, BGA-119

WED8L24514V12BC Parametric

Parameter NameAttribute value
MakerWhite Microelectronics
package instructionBGA-119
Reach Compliance Codeunknown
Maximum access time12 ns
JESD-30 codeR-PBGA-B119
memory density12582912 bit
Memory IC TypeSRAM MODULE
memory width24
Number of functions1
Number of terminals119
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize512KX24
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formGRID ARRAY
Parallel/SerialPARALLEL
Certification statusNot Qualified
Maximum supply voltage (Vsup)3.465 V
Minimum supply voltage (Vsup)3.135 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formBALL
Terminal locationBOTTOM
WED8L24514V
Asynchronous SRAM, 3.3V, 512Kx24
FEATURES
512Kx24 bit CMOS Static
Random Access Memory Array
• Fast Access Times: 10, 12, and 15ns
• Master Output Enable and Write Control
• Three Chip Enables for Byte Control
• TTL Compatible Inputs and Outputs
• Fully Static, No Clocks
Surface Mount Package
• 119 Lead BGA (JEDEC MO-163), No. 391
• Small Footprint, 14mmx22mm
• Multiple Ground Pins for Maximum Noise Immunity
Single +3.3V (±5%) Supply Operation
DSP Memory Solution
• Motorola DSP5630x
• Analog Devices SHARC
TM
The JEDEC Standard 119 lead BGA provides a 61% space savings
over using three 512Kx8, 400 mil wide SOJs and the BGA package
has a maximum height of 110 mils compared to 148 mils for the SOJ
packages.
The single or dual chip memory solutions offer improved system
performance by reducing the length of board traces and the number
of board connections compared to using multiple monolithic devices.
DESCRIPTION
The WED8L24514VxxBC is a 3.3V, twelve megabit SRAM con-
structed with three 512Kx8 die mounted on a multi-layer laminate
substrate. With 10 to 15ns access times, x24 width and a 3.3V
operating voltage, the WED8L24514V is ideal for creating a single chip
memory solution for the Motorola DSP5630x or a two chip solution
for the Analog Devices SHARC
TM
DSP.
FIG. 1
PIN CONFIGURATION
PIN SYMBOLS
1
2
AO
A5
NC
VCC
GND
VCC
GND
VCC
GND
VCC
GND
VCC
GND
VCC
A18
A9
A13
3
A1
A6
E2
GND
VCC
GND
VCC
GND
VCC
GND
VCC
GND
VCC
GND
NC
A10
A14
4
A2
E0
NC
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
NC
W
G
5
A3
A7
E3
GND
VCC
GND
VCC
GND
VCC
GND
VCC
GND
VCC
GND
NC
A11
A15
6
A4
A8
NC
VCC
GND
VCC
GND
VCC
GND
VCC
GND
VCC
GND
VCC
A17
A12
A16
7
NC
NC
I/00
I/01
I/02
I/03
I/04
I/05
NC
I/06
I/07
I/08
I/09
I/010
I/011
NC
NC
A
0-18
E
W
G
DQ
0-23
VCC
GND
NC
PIN NAMES
Address Inputs
Chip Enable
Master Write Enable
Master Output Enable
Common Data Input/Output
Power (3.3V
±5%)
Ground
No Connection
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
NC
NC
I/012
I/013
I/014
I/015
I/016
I/017
NC
I/018
I/019
I/020
I/021
I/022
I/023
NC
NC
BLOCK DIAGRAM
A
0
-A
18
G
W
E
0
E
2
E
3
19
512K x 24
Memory
Array
DQ
0
-
7
DQ
8-15
DQ
16-23
May 2000 Rev. 1
ECO #12800
1
White Electronic Designs Corporation • (508) 366-5151 • www.whiteedc.com

WED8L24514V12BC Related Products

WED8L24514V12BC WED8L24514V15BI WED8L24514V12BI WED8L24514V15BC WED8L24514V10BC
Description SRAM Module, 512KX24, 12ns, CMOS, PBGA119, BGA-119 SRAM Module, 512KX24, 15ns, CMOS, PBGA119, BGA-119 SRAM Module, 512KX24, 12ns, CMOS, PBGA119, BGA-119 SRAM Module, 512KX24, 15ns, CMOS, PBGA119, BGA-119 SRAM Module, 512KX24, 10ns, CMOS, PBGA119, BGA-119
Maker White Microelectronics White Microelectronics White Microelectronics White Microelectronics White Microelectronics
package instruction BGA-119 BGA-119 BGA-119 BGA-119 BGA-119
Reach Compliance Code unknown unknown unknown unknown unknown
Maximum access time 12 ns 15 ns 12 ns 15 ns 10 ns
JESD-30 code R-PBGA-B119 R-PBGA-B119 R-PBGA-B119 R-PBGA-B119 R-PBGA-B119
memory density 12582912 bit 12582912 bit 12582912 bit 12582912 bit 12582912 bit
Memory IC Type SRAM MODULE SRAM MODULE SRAM MODULE SRAM MODULE SRAM MODULE
memory width 24 24 24 24 24
Number of functions 1 1 1 1 1
Number of terminals 119 119 119 119 119
word count 524288 words 524288 words 524288 words 524288 words 524288 words
character code 512000 512000 512000 512000 512000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 70 °C 85 °C 85 °C 70 °C 70 °C
organize 512KX24 512KX24 512KX24 512KX24 512KX24
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum supply voltage (Vsup) 3.465 V 3.465 V 3.465 V 3.465 V 3.465 V
Minimum supply voltage (Vsup) 3.135 V 3.135 V 3.135 V 3.135 V 3.135 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
surface mount YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL INDUSTRIAL INDUSTRIAL COMMERCIAL COMMERCIAL
Terminal form BALL BALL BALL BALL BALL
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM

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