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BUK76528-55

Description
TRANSISTOR 40 A, 55 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
CategoryDiscrete semiconductor    The transistor   
File Size185KB,8 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

BUK76528-55 Overview

TRANSISTOR 40 A, 55 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power

BUK76528-55 Parametric

Parameter NameAttribute value
MakerNXP
package instructionSMALL OUTLINE, R-PSSO-G2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresESD PROTECTED
Avalanche Energy Efficiency Rating (Eas)70 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage55 V
Maximum drain current (ID)40 A
Maximum drain-source on-resistance0.028 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)160 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
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