datasheet
EEWORLDEEWORLDEEWORLD
Datasheet
Part Number

Keyword

Search
Keyword

Part Number

Search
Datasheet> All Categories > storage> storage> V53C8258HP35
PDF
Preview

V53C8258HP35

Description
EDO DRAM, 256KX8, 35ns, CMOS, PDIP24, 0.300 INCH, PLASTIC, DIP-24
Categorystorage    storage   
File Size217KB，18 Pages
ManufacturerMosel Vitelic Corporation ( MVC )
Websitehttp://www.moselvitelic.com
Download Datasheet Parametric View All

V53C8258HP35 Overview

EDO DRAM, 256KX8, 35ns, CMOS, PDIP24, 0.300 INCH, PLASTIC, DIP-24

V53C8258HP35 Parametric

Parameter NameAttribute value
MakerMosel Vitelic Corporation ( MVC )
Parts packaging codeDIP
package instructionDIP, DIP24,.3
Contacts24
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFAST PAGE WITH EDO
Maximum access time35 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O typeCOMMON
JESD-30 codeR-PDIP-T24
memory density2097152 bit
Memory IC TypeEDO DRAM
memory width8
Number of functions1
Number of ports1
Number of terminals24
word count262144 words
character code256000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize256KX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeDIP
Encapsulate equivalent codeDIP24,.3
Package shapeRECTANGULAR
Package formIN-LINE
power supply5 V
Certification statusNot Qualified
refresh cycle512
Maximum seat height4.572 mm
Maximum standby current0.001 A
Maximum slew rate0.16 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
width7.62 mm

V53C8258HP35 Preview

MOSEL VITELIC
V53C8258H
HIGH PERFORMANCE
256K X 8 EDO PAGE MODE
CMOS DYNAMIC RAM
V53C8258H
PRELIMINARY
HIGH PERFORMANCE
Max.
RAS
Access Time, (t
RAC
)
Max. Column Address Access Time, (t
CAA
)
Min. Extended Data Out Page Mode Cycle Time, (t
PC
)
Min. Read/Write Cycle Time, (t
RC
)
35
35 ns
18 ns
14 ns
70 ns
40
40 ns
20 ns
15 ns
75 ns
45
45 ns
22 ns
17 ns
80 ns
50
50 ns
24 ns
19 ns
90 ns
Features
s
256K x 8-bit organization
s
EDO Page Mode for a sustained data rate
of 71 MHz
s
RAS
access time: 35, 40, 45, 50 ns
s
Low power dissipation
s
Read-Modify-Write,
RAS-Only
Refresh,
CAS-Before-RAS
Refresh capability
s
Refresh Interval: 512 cycles/8 ms
s
Available in 24 pin 300 mil Plastic DIP,
26/24 pin 300 mil SOJ and 28-pin 300 mil
TSOP-I packages
s
Single 5V±10% Power Supply
s
TTL Interface
Description
The V53C8258H is a high speed 262,144 x 8 bit
CMOS dynamic random access memory.
The V53C8258H offers a combination of features:
Page Mode with Extended Data Output for high
data bandwidth, and Low CMOS standby current.
All inputs and outputs are TTL compatible. Input
and output capacitances are significantly lowered to
allow increased system performance. Page Mode
with Extended Data Output operation allows
random access of up to 512 (x8) bits within a row
with cycle times as fast as 14 ns. Because of static
circuitry, the
CAS
clock is not in the critical timing
path. The flow-through column address latches
allow address pipelining while relaxing many critical
system timing requirements. The V53C8258H is
ideally suited for graphics, digital signal processing
and high-performance computing systems.
Device Usage Chart
Operating
Temperature
Range
0°C to 70
°C
Package Outline
P
K
T
35
Access Time (ns)
40
45
50
Power
Std.
Temperature
Mark
Blank
•
•
•
•
•
1
•
•
•
V53C8258H Rev. 1.4 February 1997
MOSEL VITELIC
V
5
3
C
8
2
5
8
H
V53C8258H
FAMILY
DEVICE
P (PLASTIC DIP)
K (SOJ)
T (TSOP-I)
PKG
Description
Plastic DIP
SOJ
TSOP-I
Pkg.
P
K
T
Pin Count
24
26/24
28
SPEED
( t
RAC
)
TEMP.
PWR.
BLANK (0°C to 70°C)
BLANK (NORMAL)
35ns
40ns
45ns
50ns
8258H-01
26/24 Lead SOJ
PIN CONFIGURATION
Top View
V
SS
I/O
1
I/O
2
I/O
3
I/O
4
WE
RAS
A
0
A
1
A
2
A
3
V
CC
1
2
3
4
5
6
8
9
10
11
12
13
26
25
24
23
22
21
19
18
16
16
15
14
V
SS
I/O
8
I/O
7
I/O
6
I/O
5
CAS
OE
A
8
A
7
A
6
A
5
A
4
24 Lead Plastic DIP
PIN CONFIGURATION
Top View
V
SS
I/O
1
I/O
2
I/O
3
I/O
4
WE
RAS
A
0
A
1
A
2
A
3
V
CC
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
V
SS
I/O
8
I/O
7
I/O
6
I/O
5
CAS
OE
A
8
A
7
A
6
A
5
A
4
300 mil
8258H-02
28 Lead TSOP-I
PIN CONFIGURATION
Top View
CAS
I/O5
I/O6
I/O7
I/O8
VSS
VSS
NC
I/O1
I/O2
I/O3
I/O4
NC
WE
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
8258H-04
Pin Names
A
0
–A
8
RAS
OE
A8
A7
A6
A5
A4
NC
VCC
NC
A3
A2
A1
A0
RAS
Address Inputs
Row Address Strobe
Column Address Strobe
Write Enable
Output Enable
Data Input, Output
+5V Supply
0V Supply
No Connect
CAS
WE
OE
I/O
1
–I/O
8
V
CC
V
SS
NC
Absolute Maximum Ratings*
Ambient Temperature
Under Bias ............................. –10°C to +80°C
Storage Temperature (plastic) ... –55°C to +125°C
Voltage Relative to V
SS ....................
–1.0 V to +7.0 V
Data Output Current .................................... 50 mA
Power Dissipation ........................................ 1.0 W
*Note: Operation above Absolute Maximum Ratings can
adversely affect device reliability.
Capacitance*
T
A
= 25°C, V
CC
= 5 V
±
10%, V
SS
= 0 V
Symbol
C
IN1
C
IN2
C
OUT
Parameter
Address Input
RAS, CAS, OE, WE
Data Input/Output
Typ. Max.
3
4
5
4
5
7
Unit
pF
pF
pF
* Note: Capacitance is sampled and not 100% tested
V53C8258H Rev. 1.4 February 1997
2
300 mil
8258H-03
MOSEL VITELIC
Block Diagram
256K x 8
OE
WE
CAS
RAS
V53C8258H
RAS CLOCK
GENERATOR
CAS CLOCK
GENERATOR
WE CLOCK
GENERATOR
OE CLOCK
GENERATOR
VCC
VSS
DATA I/O BUS
COLUMN DECODERS
Y0–Y8
I/O 1
I/O2
I/O3
I/O
BUFFER
I/O4
I/O 5
I/O6
I/O7
I/O8
SENSE AMPLIFIERS
REFRESH
COUNTER
512 x 8
9
A0
A1
•
•
•
A7
A8
ADDRESS BUFFERS
AND PREDECODERS
X0–X8
ROW
DECODERS
512
MEMORY
ARRAY
8258H-05
V53C8258H Rev. 1.4 February 1997
3
MOSEL VITELIC
DC and Operating Characteristics
(1-2)
T
A
= 0°C to 70°C, V
CC
= 5 V
±
10%, V
SS
= 0 V, unless otherwise specified.
Symbol
Parameter
V53C8258H
Access
Time Min. Typ. Max..
–10
10
V53C8258H
Unit
µA
Test Conditions
V
SS
≤
V
IN
≤
V
CC
Notes
I
LI
Input Leakage Current
(any input pin)
Output Leakage Current
(for High-Z State)
35
I
LO
–10
10
µA
V
SS
≤
V
OUT
≤
V
CC
RAS, CAS
at V
IH
160
150
145
135
RAS, CAS
at V
IH
other inputs
≥
V
SS
mA
t
RC
= t
RC
(min.)
1, 2
I
CC1
V
CC
Supply Current,
Operating
40
45
50
I
CC2
V
CC
Supply Current,
TTL Standby
V
CC
Supply Current,
RAS-Only
Refresh
35
40
45
50
2
160
150
145
135
95
90
85
80
2.0
mA
I
CC3
mA
t
RC
= t
RC
(min.)
2
I
CC4
V
CC
Supply Current,
EDO Page Mode
Operation
35
40
45
50
mA
Minimum cycle
1, 2
I
CC5
V
CC
Supply Current,
Standby, Output Enabled
V
CC
Supply Current,
CMOS Standby
mA
RAS=V
IH
,
CAS=V
IL
other inputs
≥
V
SS
RAS
≥
V
CC
– 0.2 V,
CAS
≥
V
CC
– 0.2 V,
All other inputs
≥
V
SS
1
I
CC6
1.0
mA
V
IL
V
IH
V
OL
V
OH
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
–1
2.0
0.8
V
CC
+1
0.4
V
V
V
V
I
OL
= 4.2 mA
I
OH
= –5 mA
3
3
2.4
V53C8258H Rev. 1.4 February 1997
4
MOSEL VITELIC
AC Characteristics
T
A
= 0°C to 70°C, V
CC
= 5 V
±10%,
V
SS
= 0V unless otherwise noted
AC Test conditions, input pulse levels 0 to 3V
JEDEC
Symbol
t
RL1RH1
t
RL2RL2
t
RH2RL2
t
RL1CH1
t
CL1CH1
t
RL1CL1
t
WH2CL2
t
AVRL2
t
RL1AX
t
AVCL2
t
CL1AX
35
Symbol
t
RAS
t
RC
t
RP
t
CSH
t
CAS
t
RCD
t
RCS
t
ASR
t
RAH
t
ASC
t
CAH
Parameter
RAS
Pulse Width
Read or Write Cycle Time
RAS
Precharge Time
CAS
Hold Time
CAS
Pulse Width
RAS
to
CAS
Delay
Read Command Setup Time
Row Address Setup Time
Row Address Hold Time
Column Address Setup Time
Column Address Hold Time
RAS
Hold Time (Read Cycle)
CAS
to
RAS
Precharge Time
Read Command Hold Time
Referenced to
CAS
Read Command Hold Time
Referenced to
RAS
RAS
Hold Time
Referenced to
OE
Access Time from
OE
Access Time from
CAS
(EDO)
Access Time from
RAS
Access Time from Column
Address
CAS
to Low-Z Output
Output buffer turn-off delay time
Column Address Hold Time
from
RAS
24
t
RL1AV
t
RAD
RAS
to Column Address
Delay Time
25
t
CL1RH1(W)
t
RSH (W)
RAS
or
CAS
Hold Time
in Write Cycle
Write Command to
CAS
Lead Time
12
12
13
14
11
17
12
20
13
23
14
26
0
0
28
6
40
45
50
V53C8258H
#
1
2
3
4
5
6
7
8
9
10
11
12
13
14
Min. Max. Min. Max. Min. Max. Min. Max. Unit
35
70
25
35
7
16
0
0
6
0
4
12
5
0
23
75K
40
75
25
40
8
17
0
0
7
0
5
12
5
0
28
75K
45
80
25
45
9
18
0
0
8
0
6
13
5
0
32
75K
50
90
30
50
9
19
0
0
9
0
7
14
5
0
36
75K
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
4
t
CL1RH1(R)
t
RSH (R)
t
CH2RL2
t
CH2WX
t
CRP
t
RCH
5
15
t
RH2WX
t
RRH
0
0
0
0
ns
5
16
t
OEL1RH2
t
ROH
8
8
9
10
ns
17
18
19
20
t
GL1QV
t
CL1QV
t
RL1QV
t
AVQV
t
OAC
t
CAC
t
RAC
t
CAA
12
12
35
18
12
12
40
20
13
13
45
22
14
14
50
24
ns
ns
ns
ns
6, 7
6, 8, 9
6, 7, 10
21
22
23
t
CL1QX
t
CH2QZ
t
RL1AX
t
LZ
t
HZ
t
AR
0
0
30
6
0
0
35
7
0
0
40
8
ns
ns
ns
16
16
ns
11
ns
26
t
WL1CH1
t
CWL
12
12
13
14
ns
V53C8258H Rev. 1.4 February 1997
5
More (Only the first 5 pages are displayed. Please Download Datasheet to view the full content.) >

Recommended Resources

square wave signal generator

Internal circuit structure diagram of LM3914

Automatic light control lighting circuit one a

STK4142II audio IC circuit diagram

Simple high voltage power supply (1)

Bridge voltage stabilizing circuit using voltage regulator tube

After minicom is started, it stops at Uncompressing Linux... and then stops moving. Why?
The virtual machine has added a serial port device, and the minicom settings have also been set. The serial port is set to /dev/ttyS0, and the BPS is set to: 1152008N1. Hardware Flow Control: No. When...
gili Linux and Android
EVC compilation error, mainly error LNK2019, experts please come in and get points easily
ps2keybd.obj : error LNK2019: unresolved external symbol "int __cdecl KernelIoControl(unsigned long,void *,unsigned long,void *,unsigned long,unsigned long *)" (?KernelIoControl@@YAHKPAXK0KPAK@Z) refe...
y.yan Embedded System
When powered by a 3.7V lithium battery, do I need a power chip to get 2.5V, 2.8V, or 3.3V output?
I am making an MP3 player and want to use a 3.7V lithium battery to power it. Do I need a power chip to get 2.5V, 2.8V, or 3.3V output? Can I use a series resistor or diode to reduce the voltage?...
zhenhuzh Embedded System
nRF24LE1 Programming
I recently made an nRF24Le1 programmer and encountered some problems. I used stm32 to simulate spi to operate nrf24le1. When I sent a read status register command, the read output was all 0, and somet...
suse110 51mcu
Will Ultra-Wideband (UWB) really be popular in the future?
According to the report "Ultra-Wideband Market Analysis 2021" by market analysis agency Techno Systems Research, the UWB market we often discuss today consists of four main application categories: rea...
alan000345 RF/Wirelessly
【Perf-V Evaluation】+ Construction and basic use of development environment (2)
[i=s]This post was last edited by jinglixixi on 2021-1-22 18:08[/i]2. Basic usage of Windows-IDE 1) Open Perf-V IDE, that is, double-click the iconon the desktop to enter the working interface. 2) To ...
jinglixixi FPGA/CPLD
Shortcut:   S0 S1 S2 S3 S4 S5 S6 S7 S8 S9 SA SB SC SD SE SF SG SH SI SJ SK SL SM SN SO SP SQ SR SS ST SU SV SW SX SY SZ T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 TA TB TC TD TE TF TG TH TI TJ TK TL TM TN TO TP TQ TR TS TT TU TV TW TX TY TZ U0 U1 U2 U3 U4 U6 U7 U8 UA UB UC UD UE UF UG UH UI UJ UK UL UM UN UP UQ UR US UT UU UV UW UX UZ V0 V1 V2 V3 V4 V5 V6 V7 V8 V9 VA VB VC VD VE VF VG VH VI VJ VK VL VM VN VO VP VQ VR VS VT VU VV VW VX VY VZ W0 W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WJ WK WL WM WN WO WP WR WS WT WU WV WW WY X0 X1 X2 X3 X4 X5 X7 X8 X9 XA XB XC XD XE XF XG XH XK XL XM XN XO XP XQ XR XS XT XU XV XW XX XY XZ Y0 Y1 Y2 Y4 Y5 Y6 Y9 YA YB YC YD YE YF YG YH YK YL YM YN YP YQ YR YS YT YX Z0 Z1 Z2 Z3 Z4 Z5 Z6 Z8 ZA ZB ZC ZD ZE ZF ZG ZH ZJ ZL ZM ZN ZP ZR ZS ZT ZU ZV ZW ZX ZY

Popular Components

  1. FSP1084T50A
  2. MS24265R24T57SY-LC
  3. TMM-130-01-L-D-RA-028
  4. PX-4200-EAC-JAXB-FREQ
  5. T649N10TOF
  6. UMA02040E2611AA100
  7. CT16-2841AYM
  8. 0805B823K100PT
  9. P6SMB68A
  10. DI158S_T0_10001
  11. P6SMB27CA_R1_00001
  12. MM32F031K8U6

Popular Articles

  1. About the Noise Floor of Oscilloscopes
  2. Puretech's net profit in the first half of this year increased nearly fourfold, with new orders of 1.72 billion yuan for the overall business
  3. Tong Zixian of Pegatron: The impact of semiconductor price increases is not that serious
  4. The function of ground resistance tester
  5. SAIC and Shanghai Telecom jointly explore IPv6+industrial intelligent cloud network to achieve great integration
  6. Xiaomi Mi 10/Pro/Ultra Commemorative Edition pushes GPU driver update
  7. Tiny4412 bare metal program code relocation first experience
  8. MediaTek and AMD Create AMD RZ600 Series Wi-Fi 6E Modules
  9. BlackBerry 5G phone is not dead, the official said it is still planning to launch
  10. Connected Factory: Industrial Connectivity Promotes Industry 4.0

Technical ResourceMore

  1. Quick and Practical Design of Active Filters_E-book
  2. X-ray diffraction experimental technology training materials
  3. 75N75 pdf
  4. Introduction to the Features of Ethernet Networking Matrix System
  5. Summary of Commonly Used Chip Resistors
  6. Openstack nova source code analysis
  7. Frequency conversion speed regulation device and its commissioning, operation and maintenance
  8. Vehicle Data Collection Kit
  9. Konka P2972S (24c16) EPROM data
  10. MAX19998 Chinese data, pdf, 2300MHz to 4000M

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

About Us Customer Service Contact Information Datasheet Sitemap LatestNews
Index Files: 1472  672  495  1164  181  30  14  10  24  4 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号