White Electronic Designs
W3EG64255S-JD3
ADVANCED*
2GB – 2x128Mx64 DDR SDRAM REGISTERED, w/PLL
FEATURES
Double-data-rate architecture
DDR200, DDR266 and DDR333;
• JEDEC design specifications
Bi-directional data strobes (DQS)
Differential clock inputs (CK & CK#)
Programmable Read Latency 2,2.5 (clock)
Programmable Burst Length (2,4,8)
Programmable Burst type (sequential & interleave)
Edge aligned data output, center aligned data input.
Auto and self refresh
Serial presence detect
Dual Rank
Power supply: V
CC
2.5V ± 0.2V
JEDEC standard 184 pin DIMM package
• JD3: 30.48 (1.20")
NOTE: Consult factory for availability of:
• RoHS compliant products
• Vendor source control options
• Industrial temperature option
* This product is under development, is not qualified or characterized and is subject to
change or cancellation without notice.
DESCRIPTION
The W3EG64255S is a 2x128Mx64 Double Data Rate
SDRAM memory module based on 512Mb DDR SDRAM
component. The module consists of sixteen 256Mx4
stacks, in 66 pin TSOP packages mounted on a 184 pin
FR4 substrate.
Synchronous design allows precise cycle control with the
use of system clock. Data I/O transactions are possible on
both edges and Burst Lengths allow the same device to be
useful for a variety of high bandwidth, high performance
memory system applications.
OPERATING FREQUENCIES
DDR333 @CL=2.5
Clock Speed
CL-t
RCD
-t
RP
166MHz
2.5-3-3
DDR266 @CL=2
133MHz
2-2-2
DDR266 @CL=2
133MHz
2-3-3
DDR266 @CL=2.5
133MHz
2.5-3-3
DDR200 @CL=2
100MHz
2-2-2
April 2005
Rev. 3
1
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
White Electronic Designs
PIN CONFIGURATION
PIN
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
SYMBOL
V
REF
DQ0
V
SS
DQ1
DQS0
DQ2
V
CC
DQ3
NC
RESET#
V
SS
DQ8
DQ9
DQS1
V
CCQ
*CK1
*CK1#
V
SS
DQ10
DQ11
CKE0
V
CCQ
DQ16
DQ17
DQS2
V
SS
A9
DQ18
A7
V
CCQ
DQ19
A5
DQ24
V
SS
DQ25
DQS3
A4
V
CC
DQ26
DQ27
A2
V
SS
A1
DNU
DNU
V
CC
PIN
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
85
86
87
88
89
90
91
92
SYMBOL
DNU
A0
DNU
V
SS
DNU
BA1
DQ32
V
CCQ
DQ33
DQS4
DQ34
V
SS
BA0
DQ35
DQ40
V
CCQ
WE#
DQ41
CAS#
V
SS
DQS5
DQ42
DQ43
V
CC
NC
DQ48
DQ49
V
SS
CK2#
CK2
V
CCQ
DQS6
DQ50
DQ51
V
SS
V
CCID
DQ56
DQ57
V
CC
DQS7
DQ58
DQ59
V
SS
NC
SDA
SCL
PIN
93
94
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
113
114
115
116
117
118
119
120
121
122
123
124
125
126
127
128
129
130
131
132
133
134
135
136
137
138
SYMBOL
V
SS
DQ4
DQ5
V
CCQ
DM0
DQ6
DQ7
V
SS
NC
NC
NC
V
CCQ
DQ12
DQ13
DM1
V
CC
DQ14
DQ15
CKE1
V
CCQ
NC
DQ20
A12
V
SS
DQ21
A11
DM2
V
CC
DQ22
A8
DQ23
V
SS
A6
DQ28
DQ29
V
CCQ
DM3
A3
DQ30
V
SS
DQ31
DNU
DNU
V
CCQ
CK0
CK0#
PIN
139
140
141
142
143
144
145
146
147
148
149
150
151
152
153
154
155
156
157
158
159
160
161
162
163
164
165
166
167
168
169
170
171
172
173
174
175
176
177
178
179
180
181
182
183
184
SYMBOL
V
SS
DNU
A10
DNU
V
CCQ
DNU
V
SS
DQ36
DQ37
V
CC
DM4
DQ38
DQ39
V
SS
DQ44
RAS#
DQ45
V
CCQ
S0#
S1#
DM5
V
SS
DQ46
DQ47
NC
V
CCQ
DQ52
DQ53
A13
W3EG64255S-JD3
ADVANCED
PIN NAMES
A0-A13
BA0-BA1
DQ0-DQ63
CB0-CB7
DQS0-DQS7
CK0-CK2
CK0#-CK2#
CKE0, CKE1
S0#, S1#
RAS#
CAS#
WE#
V
CC
V
CCQ
V
SS
V
REF
V
CCSPD
SDA
SCL
SA0-SA2
V
CCID
NC/DNU
RESET#
* Not used
Address input (Multiplexed)
Bank Select Address
Data Input/Output
Check bits
Data Strobe Input/Output
Clock Input
Clock Input
Clock Enable input
Chip Select Input
Row Address Strobe
Column Address Strobe
Write Enable
Power Supply (2.5V)
Power Supply for DQS (2.5V)
Ground
Power Supply for Reference
Serial EEPROM Power Supply
(2.3V to 3.6V)
Serial data I/O
Serial clock
Address in EEPROM
V
CC
Indentification Flag
No Connect
Reset Enable
V
CC
DM6
DQ54
DQ55
V
CCQ
NC
DQ60
DQ61
V
SS
DM7
DQ62
DQ63
V
CCQ
SA0
SA1
SA2
V
CCSPD
April 2005
Rev. 3
2
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
White Electronic Designs
FUNCTIONAL BLOCK DIAGRAM
V
SS
S1#
S0#
DQS0
DQ0
DQ1
DQ2
DQ3
DQS1
DQ8
DQ9
DQ10
DQ11
DQS2
DQ16
DQ17
DQ18
DQ19
DQS3
DQ24
DQ25
DQ26
DQ27
DQS4
DQ32
DQ33
DQ34
DQ35
DQS5
DQ40
DQ41
DQ42
DQ43
DQS6
DQ48
DQ49
DQ50
DQ51
DQS7
DQ56
DQ57
DQ58
DQ59
DQS
I/O 3
I/O 2
I/O 1
I/O 0
CS#
DM
DQS
I/O 3
I/O 2
I/O 1
I/O 0
CS#
DM
DQ60
DQ61
DQ62
DQ63
DQS
I/O 3
I/O 2
I/O 1
I/O 0
CS#
DM
DQS
I/O 3
I/O 2
I/O 1
I/O 0
CS#
DM
DQ52
DQ53
DQ54
DQ55
DQS15
DQS
I/O 3
I/O 2
I/O 1
I/O 0
CS#
DQS
I/O 3
I/O 2
I/O 1
I/O 0
CS# DM
DQS
I/O 3
I/O 2
I/O 1
I/O 0
CS#
DM
DQ44
DQ45
DQ46
DQ47
DQS14
DQS
I/O 3
I/O 2
I/O 1
I/O 0
CS#
DQS
I/O 3
I/O 2
I/O 1
I/O 0
CS#
DM
DQS
I/O 3
I/O 2
I/O 1
I/O 0
CS#
DM
DQ36
DQ37
DQ38
DQ39
DQS13
DQS
I/O 3
I/O 2
I/O 1
I/O 0
CS#
DQS
I/O 3
I/O 2
I/O 1
I/O 0
CS#
DM
DQS
I/O 3
I/O 2
I/O 1
I/O 0
CS#
DM
DQ28
DQ29
DQ30
DQ31
DQS12
DQS
I/O 3
I/O 2
I/O 1
I/O 0
CS#
DQS
I/O 3
I/O 2
I/O 1
I/O 0
CS#
DM
DQS
I/O 3
I/O 2
I/O 1
I/O 0
CS#
DM
DQ20
DQ21
DQ22
DQ2
DQ23
DQS11
DQS
I/O 3
I/O 2
I/O 1
I/O 0
CS#
DQS
I/O 3
I/O 2
I/O 1
I/O 0
CS#
DM
DQS
I/O 3
I/O 2
I/O 1
I/O 0
CS#
DM
DQ12
DQ1
DQ13
DQ14
DQ15
DQS10
DQS
I/O 3
I/O 2
I/O 1
I/O 0
CS#
DQS
I/O 3
I/O 2
I/O 1
I/O 0
CS# DM
DQS
I/O 3
I/O 2
I/O 1
I/O 0
CS#
DM
DQ4
DQ5
DQ6
DQ7
DQS9
DQS
I/O 3
I/O 2
I/O 1
I/O 0
CS#
DQS8
DQS
I/O 3
I/O 2
I/O 1
I/O 0
CS#
W3EG64255S-JD3
ADVANCED
DM
DQS
I/O 3
I/O 2
I/O 1
I/O 0
DQS
I/O 3
I/O 2
I/O 1
I/O 0
DQS
I/O 3
I/O 2
I/O 1
I/O 0
DQS
I/O 3
I/O 2
I/O 1
I/O 0
DQS
I/O 3
I/O 2
I/O 1
I/O 0
DQS
I/O 3
I/O 2
I/O 1
I/O 0
DQS
I/O 3
I/O 2
I/O 1
I/O 0
DQS
I/O 3
I/O 2
I/O 1
I/O 0
CS#
DM
DM
CS#
DM
DM
CS#
DM
DM
CS#
DM
DM
CS#
DM
DM
CS#
DM
DM
CS#
DM
DM
CS#
DM
V
CCSPD
CK0
PLL
CK0#
REGISTER
SDRAM
V
CC
/V
CCQ
V
REF
V
SS
BA0,BA1: DDR SDRAMs
A0-A13: DDR SDRAMs
RAS#: DDR SDRAMs
CAS#: DDR SDRAMs
CKE: DDR SDRAMs
CKE: DDR SDRAMs
WE#: DDR SDRAMs
SERIAL PD
SCL
WP
SPD
DDR SDRAMs
DDR SDRAMs
DDR SDRAMs
S0#
S1#
BA0,BA1
A0-A13
RAS#
CAS#
CKE0
CKE1
WE#
R
E
G
I
S
T
E
R
RS0#
RS1#
RBA0,RBA1
RA0-RA13
RRAS#
RCAS#
RCKE0
RCKE1
RWE#
SDA
A0
SA0
A1
SA1
A2
SA2
PCK
PCK#
RESET#
NOTE: All resistor values are 22 ohms unless otherwise specified
Notes:
1.
DQ-to-I/O wiring is shown as recommended but may be changed.
2.
DQ/DQS/DM/CKE/S relationships must be maintained as shown.
April 2005
Rev. 3
3
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
White Electronic Designs
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to V
SS
Voltage on V
CC
supply relative to V
SS
Storage Temperature
Power Dissipation
Short Circuit Current
Symbol
V
IN
, V
OUT
V
CC
, V
CCQ
T
STG
P
D
I
0S
W3EG64255S-JD3
ADVANCED
Value
-0.5 - 3.6
-1.0 - 3.6
-55 - +150
27
50
Units
V
V
°C
W
mA
Note: Permanent device damage may occur if ‘ABSOLUTE MAXIMUM RATINGS’ are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability
DC CHARACTERISTICS
0°C
T
A
70°C, V
CC
= 2.5V ± 0.2V
Parameter
Supply Voltage
Supply Voltage
Reference Voltage
Termination Voltage
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
Symbol
V
CC
V
CCQ
V
REF
V
TT
V
IH
V
IL
V
OH
V
OL
Min
2.3
2.3
0.49 x V
CCQ
V
REF
- 0.04
V
REF
+ 0.15
-0.3
V
TT
+ 0.76
—
Max
2.7
2.7
0.51 x V
CCQ
V
REF
+ 0.04
V
CC
+ 0.3
V
REF
- 0.15
—
V
TT
- 0.76
Unit
V
V
V
V
V
V
V
V
CAPACITANCE
TA = 25°C, f = 1MHz, V
CC
= 2.5V ± 0.2V
Parameter
Input Capacitance (A0-A13)
Input Capacitance (RAS#, CAS#, WE#)
Input Capacitance (CKE0)
Input Capacitance (CK0,CK0#)
Input Capacitance (S0#)
Input Capacitance (DQM0-DQM8)
Input Capacitance (BA0-BA1)
Data input/output capacitance (DQ0-DQ63)(DQS)
Data input/output capacitance (CB0-CB7)
Symbol
C
IN1
C
IN2
C
IN3
C
IN4
C
IN5
C
IN6
C
IN7
C
OUT
C
OUT
Max
6.5
6.5
6.5
5.5
6.5
13.0
6.5
13.0
13.0
Unit
pF
pF
pF
pF
pF
pF
pF
pF
pF
April 2005
Rev. 3
4
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
White Electronic Designs
0°C
T
A
+70°C, V
CCQ
= 2.5V ± 0.2V, V
CC
= 2.5V ± 0.2V.
Includes DDR SDRAM components only
DDR333@CL=2.5
Max
4140
DDR266:@CL=2, 2.5
Max
4140
W3EG64255S-JD3
ADVANCED
I
DD
SPECIFICATIONS AND TEST CONDITIONS
Parameter
Operating Current
Symbol
I
DD0
Rank 1
Conditions
One device bank; Active - Precharge;
t
RC
= t
RC
(MIN); t
CK
= t
CK
(MIN); DQ,DM
and DQS inputs changing once per
clock cycle; Address and control inputs
changing once every two cycles.
One device bank; Active-Read-
Precharge Burst = 2; t
RC
= t
RC
(MIN);
t
CK
= t
CK
(MIN); l
OUT
= 0mA; Address
and control inputs changing once per
clock cycle.
All device banks idle; Power-down
mode; t
CK
= t
CK
(MIN); CKE = (low)
CS# = High; All device banks idle;
t
CK
= t
CK
(MIN); CKE = High; Address
and other control inputs changing once
per clock cycle. V
IN
= V
REF
for DQ,
DQS and DM.
One device bank active; Power-Down
mode; t
CK
(MIN); CKE = (low)
CS# = High; CKE = High; One device
bank; Active-Precharge;t
RC
= t
RAS
(MAX); t
CK
= t
CK
(MIN); DQ, DM and
DQS inputs changing twice per clock
cycle; Address and other control inputs
changing once per clock cycle.
Burst = 2; Reads; Continuous burst;
One device bank active; Address and
control inputs changing once per clock
cycle; t
CK
= t
CK
(MIN); l
OUT
= 0mA.
Burst = 2; Writes; Continuous burst;
One device bank active; Address and
control inputs changing once per clock
cycle; t
CK
= t
CK
(MIN); DQ,DM and DQS
inputs changing once per clock cycle.
t
RC
= t
RC
(MIN)
CKE
0.2V
DDR200@CL=2
Max
3690
Units
mA
Rank 2
Standby
State
I
DD3N
Operating Current
I
DD1
4680
4680
4230
mA
I
DD3N
Precharge Power-
Down Standby Current
Idle Standby Current
I
DD2P
I
DD2F
180
1620
180
1620
180
1440
rnA
mA
I
DD2P
I
DD2F
Active Power-Down
Standby Current
Active Standby Current
I
DD3P
I
DD3N
1260
1800
1260
1800
1080
1620
mA
mA
I
DD3P
I
DD3N
Operating Current
I
DD4R
4770
4770
4230
mA
I
DD3N
Operating Current
I
DD4W
4590
4590
4050
rnA
I
DD3N
Auto Refresh Current
Self Refresh Current
Operating Current
I
DD5
I
DD6
I
DD7A
7020
180
9090
7020
180
9000
6660
180
7920
mA
mA
mA
I
DD3N
I
DD6
I
DD3N
Four bank interleaving Reads (BL=4)
with auto precharge with t
RC
=t
RC
(MIN);
t
CK
=t
CK
(MIN); Address and control
inputs change only during Active Read
or Write commands.
April 2005
Rev. 3
5
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
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