Philips Semiconductors
Product specification
2.5V/3.3V 1-to-4 address driver (3-State)
74ALVT16344
FEATURES
•
Multiple V
CC
and GND pins minimize switching noise
•
5V I/O Compatible
•
Live insertion/extraction permitted
•
3-State output buffers
•
Power-up 3-State
•
Output capability: +64mA/-32mA
•
Latch-up protection exceeds 500mA per Jedec JC40.2 Std 17
•
ESD protection exceeds 2000 V per MIL STD 883 Method 3015
and 200 V per Machine Model
DESCRIPTION
The 74ALVT16344 high-performance BiCMOS device combines
low static and dynamic power dissipation with high speed and high
output drive. It is designed for V
CC
operation at 2.5V or 3.3V with I/O
compatibility to 5V.
The 74ALVT16344 is a 1-to-4 address driver used in applications
where four separate memory locations must be addressed by a
single address.
QUICK REFERENCE DATA
SYMBOL
t
PLH
t
PHL
C
IN
C
Out
I
CCZ
PARAMETER
Propagation delay
nAx to nBx or nBx to nAx
Input capacitance DIR, OE
Output capacitance
Total supply current
CONDITIONS
T
amb
= 25°C
C
L
= 50pF
V
I
= 0V or V
CC
V
I/O
= 0V or V
CC
Outputs disabled
TYPICAL
UNIT
2.5V
2.5
1.9
3
9
40
3.3V
1.9
1.6
3
9
70
ns
pF
pF
µA
ORDERING INFORMATION
PACKAGES
56-Pin Plastic SSOP Type III
56-Pin Plastic TSSOP Type II
TEMPERATURE RANGE
–40°C to +85°C
–40°C to +85°C
OUTSIDE NORTH AMERICA
74ALVT16344 DL
74ALVT16344 DGG
NORTH AMERICA
AV16344 DL
AV16344 DGG
DWG NUMBER
SOT371-1
SOT364-1
PIN DESCRIPTION
PIN NUMBER
8, 14, 15, 21, 36, 42, 43, 49
2, 3, 5, 6, 9, 10, 12, 13, 16, 17, 19, 20, 23,
24, 26, 27, 30,31, 33, 34, 37, 38, 40, 44, 45,
47, 48, 51, 52, 54, 55,
1, 28, 29, 56
4, 11, 18, 25, 32, 39, 46, 53
7, 22, 35, 50
SYMBOL
nA
nY
X
OE
GND
V
CC
Data inputs
Data outputs
Output enable inputs (active-Low)
Ground (0V)
Positive supply voltage
FUNCTION
1998 Jun 30
2
853-2088 19651
Philips Semiconductors
Product specification
2.5V/3.3V 1-to-4 address driver (3-State)
74ALVT16344
ABSOLUTE MAXIMUM RATINGS
1, 2
SYMBOL
V
CC
I
IK
V
I
I
OK
V
OUT
I
OUT
T
stg
PARAMETER
DC supply voltage
DC input diode current
DC input
voltage
3
V
O
< 0
Output in Off or High state
Output in Low state
Output in High state
voltage
3
DC output diode current
DC output
V
I
< 0
CONDITIONS
RATING
-0.5 to +4.6
-50
-0.5 to +7.0
-50
-0.5 to +7.0
128
-64
-65 to +150
UNIT
V
mA
V
mA
V
mA
°C
DC output current
out ut
Storage temperature range
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.
3. The input and output negative voltage ratings may be exceeded if the input and output clamp current ratings are observed.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
V
CC
V
I
V
IH
V
IL
I
OH
I
OL
∆t/∆v
T
amb
DC supply voltage
Input voltage
High-level input voltage
Input voltage
High-level output current
Low-level output current
Low-level output current; current duty cycle
≤
50%; f
≥
1kHz
Input transition rise or fall rate; Outputs enabled
Operating free-air temperature range
–40
PARAMETER
2.5V RANGE LIMITS
MIN
2.3
0
1.7
0.7
–8
8
24
10
+85
–40
MAX
2.7
5.5
3.3V RANGE LIMITS
MIN
3.0
0
2.0
0.8
–32
32
64
10
+85
MAX
3.6
5.5
UNIT
V
V
V
V
mA
mA
ns/V
°C
1998 Jun 30
5
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