Bulletin PD-20740 rev. A 01/01
80EBU02
Ultrafast Soft Recovery Diode
Features
• Ultrafast Recovery
• 175°C Operating Junction Temperature
Benefits
• Reduced RFI and EMI
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count
t
rr
= 35ns
I
F(AV)
= 80Amp
V
R
= 200V
Description/ Applications
These diodes are optimized to reduce losses and EMI/ RFI in high frequency power conditioning systems.
The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited
for HF welding, power converters and other applications where switching losses are not significant portion of the total
losses.
Absolute Maximum Ratings
Parameters
V
R
I
F(AV)
I
FSM
I
FRM
!
T
J
, T
STG
Cathode to Anode Voltage
Continuous Forward Current, T
C
= 112°C
Single Pulse Forward Current, T
C
= 25°C
Maximum Repetitive Forward Current
Operating Junction and Storage Temperatures
Max
200
80
800
160
- 55 to 175
Units
V
A
°C
!
"Square
Wave, 20kHz
Case Styles
PowIRtab
1
80EBU02
Bulletin PD-20740 rev. A 01/01
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameters
V
BR
, V
r
V
F
Breakdown Voltage,
Blocking Voltage
Forward Voltage
Min Typ Max Units Test Conditions
200
-
-
-
-
V
V
V
µA
mA
pF
nH
I
R
= 50µA
I
F
= 80A
I
F
= 80A, T
J
= 175°C
V
R
= V
R
Rated
T
J
= 150°C, V
R
= V
R
Rated
V
R
= 200V
Measured lead to lead 5mm from package body
0.98 1.13
0.79 0.92
-
-
89
3.5
50
2
-
-
I
R
Reverse Leakage Current
-
-
C
T
L
S
Junction Capacitance
Series Inductance
-
-
Dynamic Recovery Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameters
t
rr
Reverse Recovery Time
Min Typ Max Units Test Conditions
-
-
-
-
32
52
4.4
8.8
70
240
35
-
-
-
-
-
-
ns
I
F
= 1.0A, di
F
/dt = 200A/µs, V
R
= 30V
T
J
= 25°C
T
J
= 125°C
I
F
= 80A
V
R
= 160V
di
F
/dt = 200A/µs
I
RRM
Peak Recovery Current
-
-
A
T
J
= 25°C
T
J
= 125°C
Q
rr
Reverse Recovery Charge
-
-
nC
T
J
= 25°C
T
J
= 125°C
Thermal - Mechanical Characteristics
Parameters
R
thJC
R
thCS
#
Wt
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Heatsink
Weight
0.18
T
Mounting Torque
1.2
10
#"Mounting
Surface, Flat, Smooth and Greased
Min
Typ
0.2
Max
0.70
Units
K/W
5.02
g
(oz)
2.4
20
N*m
lbf.in
2
80EBU02
Bulletin PD-20740 rev. A 01/01
1000
Reverse Current - I
R
(µA)
1000
100
T
J
= 175˚C
125˚C
10
1
25˚C
0.1
0.01
0.001
0
50
100
150
200
Reverse Voltage - V
R
(V)
Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage
Instantaneous Forward Current - I
F
(A)
100
T = 175˚C
J
J
J
T = 125˚C
T = 25˚C
10000
10
Junction Capacitance - C
T
(pF)
T
J
= 25˚C
1000
100
1
0
0.5
1
1.5
2
2.5
Forward Voltage Drop - V
FM
(V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
10
1
10
100
1000
Reverse Voltage - V
R
(V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
1
Thermal Impedance Z
thJC
(°C/W)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Single Pulse
(Thermal Resistance)
P
DM
0.1
t1
t2
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
0.01
0.00001
0.0001
0.001
0.01
0.1
t
1
, Rectangular Pulse Duration (Seconds)
1
10
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics
3
80EBU02
Bulletin PD-20740 rev. A 01/01
180
Allowable Case Temperature (°C)
Average Power Loss ( Watts )
120
RMS Limit
160
140
120
100
80
see note (3)
Square wave (D = 0.50)
80% Rated Vr applied
100
80
60
40
20
0
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
DC
60
0
20
40
60
80
100
120
Average Forward Current - I
F
(AV)
(A)
Fig. 5 - Max. Allowable Case Temperature
Vs. Average Forward Current
0
20
40
60
80
100
120
Average Forward Current - I
F
(AV)
(A)
Fig. 6 - Forward Power Loss Characteristics
70
IF = 160A
IF = 80A
IF = 40A
1200
Vr = 160V
Tj = 125˚C
Tj = 25˚C
60
1000
50
Qrr ( nC )
trr ( ns )
800
IF = 160A
IF = 80A
IF = 40A
40
600
30
400
20
Vr = 160V
Tj = 125˚C
Tj = 25˚C
200
10
100
di
F
/dt (A/µs )
1000
0
100
di
F
/dt (A/µs )
1000
Fig. 7 - Typical Reverse Recovery time vs. di
F
/dt
Fig. 8 - Typical Stored Charge vs. di
F
/dt
(3)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward Power Loss = I
F(AV)
x V
FM
@ (I
F(AV)
/
D) (see Fig. 6);
Pd
REV
= Inverse Power Loss = V
R1
x I
R
(1 - D); I
R
@ V
R1
= 80% rated V
R
4
80EBU02
Bulletin PD-20740 rev. A 01/01
Reverse Recovery Circuit
V
R
= 200V
0.01
Ω
L = 70µH
D.U.T.
di
F
/dt
dif/dt
ADJUST
D
G
IRFP250
S
Fig. 9- Reverse Recovery Parameter Test Circuit
3
I
F
0
t
rr
t
a
t
b
4
2
Q
rr
I
RRM
0.5 I
RRM
di(rec)M/dt
0.75 I
RRM
5
1
/dt
di
f
F
/dt
1. di
F
/dt - Rate of change of current through zero
crossing
2. I
RRM
- Peak reverse recovery current
3. t
rr
- Reverse recovery time measured from zero
crossing point of negative going I
F
to point where
a line passing through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current
4. Q
rr
- Area under curve defined by t
rr
and I
RRM
t
rr
x I
RRM
Q
rr
=
2
5. di
(rec) M
/ dt - Peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
5
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