TRANSISTOR 11 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | NXP |
| package instruction | FLANGE MOUNT, R-PSFM-T3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Avalanche Energy Efficiency Rating (Eas) | 35 mJ |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 100 V |
| Maximum drain current (Abs) (ID) | 11 A |
| Maximum drain current (ID) | 11 A |
| Maximum drain-source on-resistance | 0.25 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| Maximum feedback capacitance (Crss) | 50 pF |
| JEDEC-95 code | TO-220AB |
| JESD-30 code | R-PSFM-T3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 175 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Polarity/channel type | N-CHANNEL |
| Maximum power consumption environment | 60 W |
| Maximum power dissipation(Abs) | 60 W |
| Maximum pulsed drain current (IDM) | 44 A |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Maximum off time (toff) | 85 ns |
| Maximum opening time (tons) | 54 ns |
| BUK452-100A | BUK452-100A127 | BUK452-100B | BUK452-100B127 | BUK452-100B,127 | |
|---|---|---|---|---|---|
| Description | TRANSISTOR 11 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | TRANSISTOR 11 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | TRANSISTOR 10 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | TRANSISTOR 10 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | 10A, 100V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| Maker | NXP | NXP | NXP | NXP | NXP |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Avalanche Energy Efficiency Rating (Eas) | 35 mJ | 35 mJ | 35 mJ | 35 mJ | 35 mJ |
| Shell connection | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 100 V | 100 V | 100 V | 100 V | 100 V |
| Maximum drain current (ID) | 11 A | 11 A | 10 A | 10 A | 10 A |
| Maximum drain-source on-resistance | 0.25 Ω | 0.25 Ω | 0.3 Ω | 0.3 Ω | 0.3 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-220AB | TO-220AB | TO-220AB | TO-220AB | TO-220AB |
| JESD-30 code | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
| Number of components | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 | 3 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 44 A | 44 A | 40 A | 40 A | 40 A |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO | NO |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal location | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON |
| package instruction | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | - | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
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