WEDPS512K32V-XBX
512Kx32 SRAM 3.3V MULTI-CHIP PACKAGE
FEATURES
Access Times of 12, 15, 17, 20ns
Packaging
• 143 PBGA, 16mm x 18mm, 288mm
2
Organized as 512Kx32; User Configurable as 1Mx16 or
2Mx8
Commercial, Industrial and Military Temperature Ranges
Low Voltage Operation:
• 3.3V ± 10% Power Supply
This product is subject to change without notice.
Low Power Data Retention 'L' Option
TTL Compatible Inputs and Outputs
Fully Static Operation:
• No clock or refresh required.
Three State Output.
PIN CONFIGURATION FOR WEDPS512K32V-XBX
Top View
1
A
B
C
D
E
F
G
H
J
K
L
M
-
CS2#
D9
D10
WE2#
GND
V
CC
CS1#
D1
D2
WE1#
GND
2
A2
A3
D8
D11
GND
GND
V
CC
V
CC
D0
D3
A6
A7
3
A1
A4
NC
GND
GND
GND
V
CC
V
CC
V
CC
NC
A5
A8
4
A0
D14
D12
GND
GND
GND
V
CC
V
CC
V
CC
D7
D6
A9
5
GND
D15
D13
GND
GND
GND
V
CC
V
CC
V
CC
D5
D4
V
CC
6
GND
NC
GND
GND
GND
GND
V
CC
V
CC
V
CC
V
CC
NC
V
CC
7
V
CC
CS4#
V
CC
V
CC
V
CC
V
CC
GND
GND
GND
GND
WE3#
GND
8
V
CC
D24
D26
V
CC
V
CC
V
CC
GND
GND
GND
D17
D19
GND
9
A18
D25
D27
V
CC
V
CC
V
CC
GND
GND
GND
D16
D18
A10
10
A17
OE#
WE4#
V
CC
V
CC
V
CC
GND
GND
GND
CS3#
A14
A11
11
A16
A15
D31
D28
V
CC
V
CC
GND
GND
D23
D20
A13
A12
12
GND
NC
D30
D29
NC
V
CC
GND
NC
D22
D21
NC
V
CC
Pin Description
I/O
0-31
A
0-18
WE
1-4
#
CS
1-4
#
OE#
V
CC
GND
NC
Data Inputs/Outputs
Address Inputs
Write Enables
Chip Selects
Output Enable
Power Supply
Ground
Not Connected
8
512K X 8
OE#
A
0-18
WE
1
# CS
1
#
Block Diagram
WE
2
# CS
2
#
WE
3
# CS
3
#
WE
4
# CS
4
#
512K X 8
512K X 8
512K X 8
8
8
8
I/O
0 - 7
I/O
8 - 15
I/O
16 - 23
I/O
24 - 31
Microsemi Corporation reserves the right to change products or specifications without notice.
May 2011
Rev. 6
© 2011 Microsemi Corporation. All rights reserved.
1
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WEDPS512K32V-XBX
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Temperature
Storage Temperature
Signal Voltage Relative to GND
Junction Temperature
Supply Voltage
Symbol
T
A
T
STG
V
G
T
J
V
CC
Min
-55
-65
-0.5
-0.5
Max
+125
+150
4.6
150
4.6
Unit
°C
°C
V
°C
V
CS#
H
L
L
L
OE#
X
L
X
H
TRUTH TABLE
WE#
X
H
L
H
Mode
Standby
Read
Write
Out Disable
Data I/O
High Z
Data Out
Data In
High Z
Power
Standby
Active
Active
Active
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
IH
V
IL
Min
3.0
2.2
-0.3
Max
3.6
V
CC
+ 0.3
+0.8
Unit
V
V
V
Parameter
BGA THERMAL RESISTANCE
Junction to Ambient (No Airflow)
Junction to Ball
Junction to Case (Top)
Symbol
Theta JA
Theta JB
Theta JC
Max
16.9
11.3
9.8
Unit
°C/W
°C/W
°C/W
Note
1
1
1
NOTE: Refer to Application Note "PBGA Thermal Resistance Correlation" at
www.whiteedc.com in the application notes section for modeling conditions.
CAPACITANCE
Ta = +25°C
Parameter
OE# capacitance
WE
1-4
# capacitance
CS
1-4
# capacitance
Data I/O capacitance
Address input capacitance
This parameter is guaranteed by design but not tested.
Symbol
C
OE
C
WE
C
CS
C
I/O
C
AD
Conditions
V
IN
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
V
I/O
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
Max
30
10
10
10
30
Unit
pF
pF
pF
pF
pF
DC CHARACTERISTICS
V
CC
= 3.3V ± 0.3V, -55°C
≤
T
A
≤
+125°C
Parameter
Input Leakage Current
Output Leakage Current
Operating Supply Current (x 32 Mode)
Standby Current
Output Low Voltage
Output High Voltage
NOTE: DC test conditions: V
IH
= V
CC
-0.3V, V
IL
= 0.3V.
Contact factory for low power option.
Symbol
I
LI
I
LO
I
CC
x 32
I
SB
V
OL
V
OH
Conditions
V
IN
= GND to V
CC
CS# = V
IH
, OE# = V
IH
, V
OUT
= GND to V
CC
CS# = V
IL
, OE# = V
IH
, f = 5MHz, V
CC
= 3.6V
CS# = V
IH
, OE# = V
IH
, f = 5MHz, V
CC
= 3.6V
I
OL
= 4.0mA
I
OH
= -4.0mA
Min
Max
10
10
400
120
0.4
2.4
Units
μA
μA
mA
mA
V
V
DATA RETENTION CHARACTERISTICS (WEDPS512K32LV-XBX only)
-55°C
≤
T
A
≤
+125°C
Parameter
Data Retention Voltage
Data Retention Current
Symbol
V
CC
I
CCDR
Conditions
V
CC
= 2.19V
CS = V
CC
- 0.2V
Min
2.19
8.0
Max
Units
V
mA
Microsemi Corporation reserves the right to change products or specifications without notice.
May 2011
Rev. 6
© 2011 Microsemi Corporation. All rights reserved.
2
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WEDPS512K32V-XBX
AC CHARACTERISTICS
V
CC
= 3.3V, -55°C
≤
T
A
≤
+125°C
Parameter
Read Cycle
Read Cycle Time
Address Access Time
Output Hold from Address Change
Chip Select Access Time
Output Enable to Output Valid
Chip Select to Output in Low Z
Output Enable to Output in Low Z
Chip Disable to Output in High Z
Output Disable to Output in High Z
1. This parameter is guaranteed by design but not tested.
Symbol
t
RC
t
AA
t
OH
t
ACS
t
OE
t
CLZ
1
t
OLZ
1
t
CHZ
1
t
OHZ
1
-12
Min
12
0
12
7
1
0
7
7
1
0
Max
12
0
Min
15
-15
Max
15
0
15
8
1
0
8
8
Min
17
-17
Max
17
0
17
8
1
0
8
8
Min
20
-20
Max
20
20
10
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
10
10
AC CHARACTERISTICS
V
CC
= 3.3V, -55°C
≤
T
A
≤
+125°C
Parameter
Write Cycle
Write Cycle Time
Chip Select to End of Write
Address Valid to End of Write
Data Valid to End of Write
Write Pulse Width
Address Setup Time
Address Hold Time
Output Active from End of Write
Write Enable to Output in High Z
Data Hold Time
1. This parameter is guaranteed by design but not tested.
Symbol
t
WC
t
CW
t
AW
t
DW
t
WP
t
AS
t
AH
t
OW
1
t
WHZ
1
t
DH
-12
Min
12
10
10
8
10
0
0
2
7
0
0
Max
Min
15
12
12
9
12
0
0
2
-15
Max
Min
17
12
12
9
14
0
0
3
8
0
-17
Max
Min
20
14
14
10
14
0
0
3
8
0
-20
Max
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
9
FIGURE 4 – AC TEST CIRCUIT
AC Test Conditions
Parameter
Input Pulse Levels
Input Rise and Fall
Input and Output Reference Level
Output Timing Reference Level
Typ
V
IL
= 0, V
IH
= 3.0
5
1.5
1.5
Unit
V
ns
V
V
I
OL
Current Source
D.U.T.
C
eff
= 50 pf
V
Z
»
1.5V
(Bipolar Supply)
NOTES:
V
Z
is programmable from -2V to +7V.
I
OL
& I
OH
programmable from 0 to 16mA.
Tester Impedance Z0 = 75
Ω.
V
Z
is typically the midpoint of V
OH
and V
OL
.
I
OL
& I
OH
are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
I
OH
Current Source
Microsemi Corporation reserves the right to change products or specifications without notice.
May 2011
Rev. 6
© 2011 Microsemi Corporation. All rights reserved.
3
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WEDPS512K32V-XBX
TIMING WAVEFORM – READ CYCLE
CS#
OE#
READ CYCLE 2, (CS# = OE# = V
IL
, WE# = V
IH
)
READ CYCLE 2 (WE# = V
IH
)
WRITE CYCLE – WE# CONTROLLED
CS#
WE#
WRITE CYCLE 1, WE# CONTROLLED
WRITE CYCLE – CS# CONTROLLED
CS#
WE#
WRITE CYCLE 2, CS# CONTROLLED
Microsemi Corporation reserves the right to change products or specifications without notice.
May 2011
Rev. 6
© 2011 Microsemi Corporation. All rights reserved.
4
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WEDPS512K32V-XBX
PACKAGE 756: 143 BALL GRID ARRAY
BOTTOM VIEW
12 11 10 9
8
7
6
5 4
3
2
1
A
B
C
D
E
F
G
H
J
K
L
M
16.25 (0.640)
MAX
13.97 (0.550)
BSC
1.27
(0.050)
BSC
1.27 (0.050) BSC
13.97 (0.550)
BSC
18.25 (0.719)
MAX
1.93 (0.076)
MAX
0.61 (0.024)
BSC
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
Microsemi Corporation reserves the right to change products or specifications without notice.
May 2011
Rev. 6
© 2011 Microsemi Corporation. All rights reserved.
5
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
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