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PCF8594C-2P

Description
IC 512 X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8, 0.300 INCH, EIAJ, PLASTIC, MO-001, SC-504-8, SOT-97-1, DIP-8, Programmable ROM
Categorystorage    storage   
File Size377KB,20 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance  
Download Datasheet Parametric Compare View All

PCF8594C-2P Overview

IC 512 X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8, 0.300 INCH, EIAJ, PLASTIC, MO-001, SC-504-8, SOT-97-1, DIP-8, Programmable ROM

PCF8594C-2P Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeMO-001
package instruction0.300 INCH, EIAJ, PLASTIC, MO-001, SC-504-8, SOT-97-1, DIP-8
Contacts8
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresDATA RETENTION = 40 YEARS; WIRE I2C INTERFACE
Maximum clock frequency (fCLK)0.1 MHz
Data retention time - minimum40
Durability100000 Write/Erase Cycles
JESD-30 codeR-PDIP-T8
JESD-609 codee4
length9.5 mm
memory density4096 bit
Memory IC TypeEEPROM
memory width8
Number of functions1
Number of terminals8
word count512 words
character code512
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize512X8
Output characteristicsOPEN-DRAIN
Package body materialPLASTIC/EPOXY
encapsulated codeDIP
Encapsulate equivalent codeDIP8,.3
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialSERIAL
Peak Reflow Temperature (Celsius)250
power supply3/5 V
Certification statusNot Qualified
Maximum seat height4.2 mm
Serial bus typeI2C
Maximum standby current0.0000035 A
Maximum slew rate0.0008 mA
Maximum supply voltage (Vsup)6 V
Minimum supply voltage (Vsup)2.5 V
Nominal supply voltage (Vsup)3.3 V
surface mountNO
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceNickel/Palladium/Gold (Ni/Pd/Au)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperature40
width7.62 mm
Maximum write cycle time (tWC)10 ms
write protectHARDWARE
PCF8594C-2
512
×
8-bit CMOS EEPROM with I
2
C-bus interface
Rev. 01 — 09 May 2002
Product data
1. Description
The PCF8594C-2 is a floating gate Electrically Erasable Programmable Read Only
Memory (EEPROM) with 4 kbits (512
×
8-bit) non-volatile storage. By using an
internal redundant storage code, it is fault tolerant to single bit errors. This feature
dramatically increases the reliability compared to conventional EEPROMs. Power
consumption is low due to the full CMOS technology used. The programming voltage
is generated on-chip, using a voltage multiplier.
Data bytes are received and transmitted via the serial I
2
C-bus. Up to four
PCF8594C-2 devices may be connected to the I
2
C-bus. Chip select is accomplished
by two address inputs (A1 and A2).
Timing of the E/W cycle is carried out internally, thus no external components are
required. Programming Time Control (PTC), Pin 7, must be connected to either V
DD
or left open-circuit. There is an option of using an external clock for timing the length
of an E/W cycle.
2. Features
s
Low power CMOS:
x
2.0 mA maximum operating current
x
maximum standby current 10
µA
(at 6.0 V), typical 4
µA
s
Non-volatile storage of 4 kbits organized as 512
×
8-bit
s
Single supply with full operation down to 2.5 V
s
On-chip voltage multiplier
s
Serial input/output I
2
C-bus
s
Write operations:
x
byte write mode
x
8-byte page write mode (minimizes total write time per byte)
s
Read operations:
x
sequential read
x
random read
s
Internal timer for writing (no external components)
s
Internal power-on reset
s
0 to 100 kHz clock frequency
s
High reliability by using a redundant storage code
s
Endurance: 1,000,000 Erase/Write (E/W) cycles at T
amb
= 22
°C
s
10 years non-volatile data retention time

PCF8594C-2P Related Products

PCF8594C-2P PCF8594C-2T
Description IC 512 X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8, 0.300 INCH, EIAJ, PLASTIC, MO-001, SC-504-8, SOT-97-1, DIP-8, Programmable ROM IC 512 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8, 3.90 MM, PLASTIC, MS-012, SOT-96-1, SOP-8, Programmable ROM
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Maker NXP NXP
Parts packaging code MO-001 SOIC
package instruction 0.300 INCH, EIAJ, PLASTIC, MO-001, SC-504-8, SOT-97-1, DIP-8 3.90 MM, PLASTIC, MS-012, SOT-96-1, SOP-8
Contacts 8 8
Reach Compliance Code compliant compli
ECCN code EAR99 EAR99
Other features DATA RETENTION = 40 YEARS; WIRE I2C INTERFACE DATA RETENTION = 40 YEARS; WIRE I2C INTERFACE
Maximum clock frequency (fCLK) 0.1 MHz 0.1 MHz
Data retention time - minimum 40 40
Durability 100000 Write/Erase Cycles 100000 Write/Erase Cycles
JESD-30 code R-PDIP-T8 R-PDSO-G8
JESD-609 code e4 e4
length 9.5 mm 4.9 mm
memory density 4096 bit 4096 bi
Memory IC Type EEPROM EEPROM
memory width 8 8
Number of functions 1 1
Number of terminals 8 8
word count 512 words 512 words
character code 512 512
Operating mode SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 85 °C 85 °C
Minimum operating temperature -40 °C -40 °C
organize 512X8 512X8
Output characteristics OPEN-DRAIN OPEN-DRAIN
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code DIP SOP
Encapsulate equivalent code DIP8,.3 SOP8,.4
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE SMALL OUTLINE
Parallel/Serial SERIAL SERIAL
Peak Reflow Temperature (Celsius) 250 260
power supply 3/5 V 3/5 V
Certification status Not Qualified Not Qualified
Maximum seat height 4.2 mm 1.75 mm
Serial bus type I2C I2C
Maximum standby current 0.0000035 A 0.0000035 A
Maximum slew rate 0.0008 mA 0.0008 mA
Maximum supply voltage (Vsup) 6 V 6 V
Minimum supply voltage (Vsup) 2.5 V 2.5 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V
surface mount NO YES
technology CMOS CMOS
Temperature level INDUSTRIAL INDUSTRIAL
Terminal surface Nickel/Palladium/Gold (Ni/Pd/Au) Nickel/Palladium/Gold (Ni/Pd/Au)
Terminal form THROUGH-HOLE GULL WING
Terminal pitch 2.54 mm 1.27 mm
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 40 40
width 7.62 mm 3.9 mm
Maximum write cycle time (tWC) 10 ms 10 ms
write protect HARDWARE HARDWARE

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