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VP0550N3P001

Description
Small Signal Field-Effect Transistor, 0.07A I(D), 500V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
CategoryDiscrete semiconductor    The transistor   
File Size121KB,4 Pages
ManufacturerSupertex
Download Datasheet Parametric View All

VP0550N3P001 Overview

Small Signal Field-Effect Transistor, 0.07A I(D), 500V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92

VP0550N3P001 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSupertex
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage500 V
Maximum drain current (ID)0.07 A
Maximum drain-source on-resistance125 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)10 pF
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Maximum power consumption environment1 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
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