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JANS2N3867

Description
Small Signal Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, SIMILAR TO TO-5, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size448KB,5 Pages
ManufacturerVPT Inc
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JANS2N3867 Overview

Small Signal Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, SIMILAR TO TO-5, 3 PIN

JANS2N3867 Parametric

Parameter NameAttribute value
MakerVPT Inc
package instructionCYLINDRICAL, O-MBCY-W3
Reach Compliance Codecompliant
Shell connectionCOLLECTOR
Maximum collector current (IC)3 A
Collector-emitter maximum voltage40 V
ConfigurationSINGLE
Minimum DC current gain (hFE)25
JEDEC-95 codeTO-5
JESD-30 codeO-MBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusQualified
GuidelineMILITARY STANDARD (USA)
surface mountNO
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)600 ns
Maximum opening time (tons)100 ns
2N3867, 2N3867S & 2N3868, 2N3868S
PNP Silicon Low Power Transistor
Rev. V3
Features
Available in JAN, JANTX, JANTXV per MIL-PRF-19500/350
TO-5 Package: 2N3867, 2N3868
TO-39 Package: 2N3867S, 2N3868S
Designed for High Speed Switching and Amplifier Applications
Electrical Characteristics (T
A
= 25
o
C unless otherwise noted)
Parameter
Test Conditions
V
CB
=
-40V
2N3867, 2N3867S
V
CB
=
-60V
2N3868, 2N3868S
I
C
=
-20
mA dc, 2N3867, 2N3867S
I
C
=
-20
mA dc, 2N3868, 2N3868S
V
EB
= +2.0 V dc, V
CE
=
-40
Vdc,
2N3867, 2N3867S
V
EB
= +2.0 V dc, V
CE
=
-60
Vdc,
2N3868, 2N3868S
V
EB
=
-4.0
Vdc
V
CE
=
-1.0
V dc, I
C
=
-500
mA dc
2N3867, 2N3867S
2N3868, 2N3868S
V
CE
=
-2.0
Vdc, I
C
=
-1.5
A dc
2N3867, 2N3867S
2N3868, 2N3868S
V
CE
=
-3.0
V dc, I
C
=
-2.5
A dc
2N3867, 2N3867S
2N3868, 2N3868S
V
CE
=
-5.0
V dc, I
C
=
-3.0
mA dc
All Types
I
C
=
-500
mA dc, I
B
=
-50
mA dc
I
C
=
-1.5
A dc, I
B
=
-150
mA dc
I
C
=
-2.5
A dc, I
B
=
-250
mA dc
Symbol Units
Min.
Max.
Collector
-
Base Breakdown Voltage
Collector
-
Emitter Breakdown Voltage
I
CBO1
µA dc
-40
-60
-100
-1.0
-1.0
V
(BR)CEO
V dc
Collector
-
Emitter Cutoff Current
I
CEX1
µA dc
Emitter
-
Base Cutoff Current
I
EBO1
µA dc
-100
50
35
h
FE
-
40
30
25
20
20
V
CE(sat)1
V
CE(sat)2
V dc
V
CE(sat)3
200
150
-0.5
-0.75
-1.5
Forward Current Transfer Ratio
Collector
-
Emitter Saturation Voltage
Base
-
Emitter Saturation Voltage
I
C
=
-500
mA dc, I
B
=
-50
mA dc
I
C
=
-1.5
A dc, I
B
=
-150
mA dc
I
C
=
-2.5
A, I
B
=
-250
mA dc
V
BE(sat)1
V
BE(sat)2
V dc
V
BE(sat)3
-0.9
-1.0
-1.4
-2.0
1
(Continued next page)
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com

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Description Small Signal Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, SIMILAR TO TO-5, 3 PIN Small Signal Bipolar Transistor, Small Signal Bipolar Transistor, Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, SIMILAR TO TO-5, 3 PIN Small Signal Bipolar Transistor,
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