2N3867, 2N3867S & 2N3868, 2N3868S
PNP Silicon Low Power Transistor
Rev. V3
Features
•
•
•
•
Available in JAN, JANTX, JANTXV per MIL-PRF-19500/350
TO-5 Package: 2N3867, 2N3868
TO-39 Package: 2N3867S, 2N3868S
Designed for High Speed Switching and Amplifier Applications
Electrical Characteristics (T
A
= 25
o
C unless otherwise noted)
Parameter
Test Conditions
V
CB
=
-40V
2N3867, 2N3867S
V
CB
=
-60V
2N3868, 2N3868S
I
C
=
-20
mA dc, 2N3867, 2N3867S
I
C
=
-20
mA dc, 2N3868, 2N3868S
V
EB
= +2.0 V dc, V
CE
=
-40
Vdc,
2N3867, 2N3867S
V
EB
= +2.0 V dc, V
CE
=
-60
Vdc,
2N3868, 2N3868S
V
EB
=
-4.0
Vdc
V
CE
=
-1.0
V dc, I
C
=
-500
mA dc
2N3867, 2N3867S
2N3868, 2N3868S
V
CE
=
-2.0
Vdc, I
C
=
-1.5
A dc
2N3867, 2N3867S
2N3868, 2N3868S
V
CE
=
-3.0
V dc, I
C
=
-2.5
A dc
2N3867, 2N3867S
2N3868, 2N3868S
V
CE
=
-5.0
V dc, I
C
=
-3.0
mA dc
All Types
I
C
=
-500
mA dc, I
B
=
-50
mA dc
I
C
=
-1.5
A dc, I
B
=
-150
mA dc
I
C
=
-2.5
A dc, I
B
=
-250
mA dc
Symbol Units
Min.
Max.
Collector
-
Base Breakdown Voltage
Collector
-
Emitter Breakdown Voltage
I
CBO1
µA dc
-40
-60
—
-100
—
-1.0
-1.0
V
(BR)CEO
V dc
Collector
-
Emitter Cutoff Current
I
CEX1
µA dc
Emitter
-
Base Cutoff Current
I
EBO1
µA dc
—
-100
50
35
h
FE
-
40
30
25
20
20
V
CE(sat)1
V
CE(sat)2
V dc
V
CE(sat)3
—
—
—
200
150
—
—
—
-0.5
-0.75
-1.5
Forward Current Transfer Ratio
Collector
-
Emitter Saturation Voltage
Base
-
Emitter Saturation Voltage
I
C
=
-500
mA dc, I
B
=
-50
mA dc
I
C
=
-1.5
A dc, I
B
=
-150
mA dc
I
C
=
-2.5
A, I
B
=
-250
mA dc
V
BE(sat)1
V
BE(sat)2
V dc
V
BE(sat)3
-0.9
-1.0
-1.4
-2.0
1
(Continued next page)
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Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
2N3867, 2N3867S & 2N3868, 2N3868S
PNP Silicon Low Power Transistor
Rev. V3
Electrical Characteristics (T
A
= +25
o
C unless otherwise noted)
Parameter
Test Conditions
T
A
= +150
o
C
V
EB
= +2.0 V dc, V
CE
=
-40
Vdc,
2N3867, 2N3867S
V
EB
= +2.0 V dc, V
CE
=
-60
Vdc,
2N3868, 2N3868S
T
A
=
-55
o
C
V
CE
=
-1.0
V dc, I
C
=
-500
mA dc
2N3867, 2N3867S
2N3868, 2N3868S
Symbol Units
Min.
Max.
Collector
-
Emitter Cutoff Current
I
CEX2
µA dc
—
-50
-50
Forward-Current Transfer Ratio
Dynamic Characteristics
Magnitude of Common Emitter Small-Signal
Short-Circuit Forward Current Transfer Ratio
Open Circuit Output Capacitance
Input Capacitance
Switching Characteristics
Delay Time
Rise Time
Storage Time
Fall Time
h
FE5
V dc
25
17
V
CE
=
-5.0
V dc, I
C
=
-100
mA dc,
f = 20 MHz
V
CB
= 10 Vdc, I
E
= 0, 100 kHz ≤ f ≤ 1 MHz
V
CB
=
-3
Vdc, I
C
= 0, 100 kHz ≤ f ≤ 1 MHz
| h
fe
|
C
obo
C
ibo
-
pF
pF
3
—
—
12
120
800
V
CC
=
-30
V dc, V
EB
= 0, I
C
=
-1.5
A dc,
I
B1
=
-150
mA dc
V
CC
=
-30
V dc, V
EB
= 0 V dc,
I
C
=
-1.5
A dc, I
B1
=
-150
mA dc
V
CC
=
-30
V dc, V
EB
= 0 V dc,
I
C
=
-1.5
A dc, I
B1
= I
B2
=
-150
mA dc
V
CC
=
-30
V dc, V
EB
= 0V dc,
I
C
=
-1.5
A dc, I
B1
= I
B2
=
-150
mA dc
t
d
t
r
t
s
t
f
ns
ns
ns
ns
—
—
—
—
35
65
500
100
2
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
2N3867, 2N3867S & 2N3868, 2N3868S
PNP Silicon Low Power Transistor
Rev. V3
Absolute Maximum Ratings (T
A
= +25
o
C unless otherwise noted)
Ratings
Collector
-
Emitter Voltage
2N3867, 2N3867S
2N3868, 2N3868S
Collector
-
Base Voltage
2N3867, 2N3867S
2N3868, 2N3868S
Emitter
-
Base Voltage
Collector Current
Total Power Dissipation
@ T
A
= +25°C
(1)
@ T
C
= +25°C
(2)
Operating & Storage Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
T
J
, T
STG
Value
-40
V dc
-60
V dc
-40
V dc
-60
V dc
-4.0
V dc
-3.0
A dc
1.0 W
10 W
-65°C
to +200°C
(1) For derating, see figures 5, 6, 7 and 8 of MIL-PRF-19500/350.
(2) For thermal curves, see figures 9, 10, 11 and 12 of MIL-PRF-19500/350.
Thermal Characteristics
Characteristics
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max. Value
17.5°C/W
Safe Operating Area
DC Tests:
Test 1:
Test 2:
Test 3:
T
C
= +25°C, I Cycle, t = 1.0 s (see figure 15 of MIL-PRF-19500/350
V
CE
=
-3.33
V dc, I
C
=
-3
A dc
V
CE
=
-40
V dc, I
C
=
-160
mA dc, 2N3867, 2N3867S
V
CE
=
-60
V dc, I
C
=
-80
mA dc, 2N3868, 2N3868S
3
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
2N3867, 2N3867S & 2N3868, 2N3868S
PNP Silicon Low Power Transistor
Rev. V3
Outline Drawings (TO-5, TO-39)
4
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
2N3867, 2N3867S & 2N3868, 2N3868S
PNP Silicon Low Power Transistor
Rev. V3
VPT COMPONENTS. ALL RIGHTS RESERVED.
Information in this document is provided in connection with VPT Components products. These materials are provided by VPT
Components as a service to its customers and may be used for informational purposes only. Except as provided in VPT
Components Terms and Conditions of Sale for such products or in any separate agreement related to this document, VPT
Components assumes no liability whatsoever. VPT Components assumes no responsibility for errors or omissions in these
materials. VPT Components may make changes to specifications and product descriptions at any time, without notice. VPT
Components makes no commitment to update the information and shall have no responsibility whatsoever for conflicts or
incompatibilities arising from future changes to its specifications and product descriptions. No license, express or implied, by
estoppels or otherwise, to any intellectual property rights is granted by this document.
THESE MATERIALS ARE PROVIDED "AS IS" WITHOUT WARRANTY OF ANY KIND, EITHER EXPRESS OR IMPLIED,
RELATING TO SALE AND/OR USE OF VPT COMPONENTS PRODUCTS INCLUDING LIABILITY OR WARRANTIES RE-
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COMPONENTS FURTHER DOES NOT WARRANT THE ACCURACY OR COMPLETENESS OF THE INFORMATION,
TEXT, GRAPHICS OR OTHER ITEMS CON-TAINED WITHIN THESE MATERIALS. VPT COMPONENTS SHALL NOT BE
LIABLE FOR ANY SPECIAL, IN-DIRECT, INCIDENTAL, OR CONSEQUENTIAL DAMAGES, INCLUDING WITHOUT LIMI-
TATION, LOST REVE-NUES OR LOST PROFITS, WHICH MAY RESULT FROM THE USE OF THESE MATERIALS.
VPT Components products are not intended for use in medical, lifesaving or life sustaining applications. VPT Components
customers using or selling VPT Components products for use in such applications do so at their own risk and agree to fully
indemnify VPT Components for any damages resulting from such improper use or sale.
5
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
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