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RD4.7UJN-T1

Description
Zener Diode, 4.7V V(Z), 5.59%, 0.15W, Silicon, Unidirectional, ULTRA SUPER MINIMOLD PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size42KB,8 Pages
ManufacturerNEC Electronics
Download Datasheet Parametric View All

RD4.7UJN-T1 Overview

Zener Diode, 4.7V V(Z), 5.59%, 0.15W, Silicon, Unidirectional, ULTRA SUPER MINIMOLD PACKAGE-2

RD4.7UJN-T1 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerNEC Electronics
package instructionR-PDSO-G2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOW NOISE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JESD-30 codeR-PDSO-G2
JESD-609 codee0
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation0.15 W
Certification statusNot Qualified
Nominal reference voltage4.7 V
surface mountYES
technologyZENER
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Maximum voltage tolerance5.59%
Working test current0.5 mA
DATA SHEET
ZENER DIODES
RD4.7UJ to RD39UJ
LOW NOISE SHARP BREAKDOWN CHARACTERISTICS
ZENER DIODES
2PIN ULTRA SUPER MINI MOLD
DESCRIPTION
Type RD4.7UJ to RD39UJ Series are 2PIN Ultra Super Mini
Mold Package zener diodes possessing an allowable power
dissipation of 150 mW featuring low noise and sharp break-
down characteristic. They are intended for use in audio equip-
0.3±0.05
0.8±0.1
0.15
0.11+0.05
–0.01
0±0.05
PACKAGE DIMENSIONS
(Unit: mm)
ment, instrument equipment.
2.1±0.1
1.3±0.1
FEATURES
• Low Noise
• Sharp Breakdown characteristics
• V
z
; Applied E24 standard
APPLICATIONS
Circuits for Constant Voltage, Constant Current, Waveform
clipper, Surge absorber, etc.
Cathode
Indication
MAXIMUM RATINGS (T
A
= 25
°
C)
Power Dissipation
Forward Current
Reverse Surge Power
P
I
F
P
RSM
150 mW
100 mA
2.2 W
(at t = 10
µ
s/1 pulse)
Show Fig. 6
Junction Temperature
Storage Temperature
T
j
T
stg
150
°C
–55 to +150
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability
and additional information.
Document No. D13938EJ3V0DS00 (3rd edition)
(Previous No. DC-2135)
Date Published March 1999 N CP(K)
Printed in Japan
©
0.7±0.1
1993

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