Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating. These features
combine to make this design an extremely efficient and reliable device
for use in Automotive applications and wide variety of other applications.
c
100A
Applications
l
l
l
l
l
G
S
S
G
Electric Power Steering (EPS)
Battery Switch
Start/Stop Micro Hybrid
Heavy Loads
DC-DC Converter
Standard Pack
Form
Tube
Tape and Reel
Tape and Reel Left
Tape and Reel Right
Tube
D-Pak
AUIRFR8405
S
D
G
I-Pak
AUIRFU8405
G
D
S
Gate
Quantity
75
2000
3000
3000
75
Drain
Source
Ordering Information
Base part
Package Type
AUIRFR8405
DPak
Complete Part Number
AUIRFR8405
AUIRFR8405TR
AUIRFR8405TRL
AUIRFR8405TRR
AUIRFU8405
AUIRFU8405
IPak
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional
operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions
for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions. Ambient temperature (T
A
) is 25°C, unless otherwise specified.
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
211
150
100
804
163
1.1
± 20
-55 to + 175
Units
A
d
l
W
W/°C
V
°C
300
208
256
See Fig. 14, 15, 24a, 24b
Avalanche Characteristics
E
AS (Thermally limited)
E
AS (tested)
I
AR
E
AR
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
e
Ãd
e
mJ
A
mJ
Thermal Resistance
Symbol
R
θJC
R
θJA
R
θ
JA
d
j
Parameter
Junction-to-Case
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
kl
Typ.
–––
–––
–––
Max.
0.92
50
110
Units
°C/W
HEXFET
®
is a registered trademark of International Rectifier.
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