Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating. These features
combine to make this design an extremely efficient and reliable device
for use in Automotive applications and wide variety of other applications.
c
100A
Applications
l
l
l
l
l
G
S
S
G
Electric Power Steering (EPS)
Battery Switch
Start/Stop Micro Hybrid
Heavy Loads
DC-DC Converter
Standard Pack
Form
Tube
Tape and Reel
Tape and Reel Left
Tape and Reel Right
Tube
D-Pak
AUIRFR8405
S
D
G
I-Pak
AUIRFU8405
G
D
S
Gate
Quantity
75
2000
3000
3000
75
Drain
Source
Ordering Information
Base part
Package Type
AUIRFR8405
DPak
Complete Part Number
AUIRFR8405
AUIRFR8405TR
AUIRFR8405TRL
AUIRFR8405TRR
AUIRFU8405
AUIRFU8405
IPak
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional
operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions
for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions. Ambient temperature (T
A
) is 25°C, unless otherwise specified.
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
211
150
100
804
163
1.1
± 20
-55 to + 175
Units
A
d
l
W
W/°C
V
°C
300
208
256
See Fig. 14, 15, 24a, 24b
Avalanche Characteristics
E
AS (Thermally limited)
E
AS (tested)
I
AR
E
AR
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
e
Ãd
e
mJ
A
mJ
Thermal Resistance
Symbol
R
θJC
R
θJA
R
θ
JA
d
j
Parameter
Junction-to-Case
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
kl
Typ.
–––
–––
–––
Max.
0.92
50
110
Units
°C/W
HEXFET
®
is a registered trademark of International Rectifier.
When looking at the datasheet, I saw this paragraph about the GPIO: [size=4]When using the GPxDAT register to change the level of an output pin, you should be cautious not to[/size] [size=4]accidental...
volatile char tmp = 0;for (tmp = 0; tmp4; tmp++){recbuf[tmp] = resp[tmp + 1];}The following warning is given during compilation:
Warning[Pa082]: undefined behavior: the order of volatile accesses is u...
fet140(149), when I enter c-spy, it prompts "target not found". It was working fine yesterday, and the parallel port was fine too. Is the emulation tool damaged? Can any expert give me some advice? Th...
Smart meter with Bluetooth wireless reading based on State Grid DL645 protocol (demonstration by netizen KW41) : https://training.eeworld.com.cn/course/4225...
Senior Software Engineer Qualifications: 1. Bachelor degree or above in software, computer, communication and other related majors, more than two years of development experience. 2. Proficient in C/C+...
Recently, the results of the 2018 German Red Dot Design Award were announced. GoodWe, a company located in Suzhou High-tech Zone, stood out among thousands of outstanding design products from 5...[Details]
ZTE was punished, and Hou Weigui, who had already retired, had to come out of retirement again and run around to mediate. Let's follow the embedded editor to learn about the relevant content.
...[Details]
At present, in the world,
the construction of
smart cities
is in the process of gradually landing from concept, and technology giants and investment giants are important participants in this...[Details]
In the Huaxing Optoelectronics LCD panel
factory
located in Guangming New District, Shenzhen
, apart from a few people repairing machines, it is often difficult to see other people. Here, ev...[Details]
This program is used in the development board to generate sounds of different frequencies. The overall program is relatively simple, mainly using two timers. The code and my comments are as follows. ...[Details]
Different from 51, AVR and other single-chip microcomputers, the clock signal sources of msp430 include LFXT1, XT2 and DCO. 1. LFXT1: It can connect high-speed and low-speed crystal oscillators. In l...[Details]
On the eve of 5G
commercialization,
ZTE
has established and adhered to
the
5G
pioneer strategy, focusing on
5G
end-to-end solutions, and investing in standard setting, ...[Details]
In mid-to-late 2016, a girl from Hubei came to Beijing alone, full of curiosity about
cloud computing
. The girl left the deepest impression on me was her lovely smile. She told me that if ...[Details]
T1 or T2 are two timers/counters of MCS-51 microcontroller. The first method can use two timers/counters to generate rectangular waves. In order to save interface resources, the second method is used...[Details]
#include reg52.h //Include the header file. Generally, no modification is required. The header file contains the definition of special function registers. /*-------------...[Details]
;Question: The 80C51 single-chip microcomputer has a fosc = 6MHz. It is required to use the T1 timer working mode 1 to perform a timing of 40ms. And P1.7 periodically outputs a rectangular wave with ...[Details]
Try to design a subroutine, whose function is to rearrange the 6 single-byte positive integers in the internal RAM pointed to by (R0) in ascending order. ;========================================== ...[Details]
I read the description of I/O ports in the M16 manual, which says that you can use the internal pull-up resistor by setting DDXn=0, PORTn=1, PUD=0. Since this can be used, when using the key circuit,...[Details]
The program of this instrument mainly consists of keyboard, display program, AT24C01A reading and writing program, signal generating program and other parts. The following is an analysis of so...[Details]
EUV
lithography technology will be introduced to 10nm and
7nm
process nodes in the next few years. However, according to the analysis released at the ISS 2018 held in California, the ...[Details]
DSP and ARM Processors
京公网安备 11010802033920号
EEWORLD
