ZMZ20
MAGNETIC FIELD SENSORS
DESCRIPTION
The ZMZ20 is an extremely sensitive magnetic field sensor in a 4 pin
E-Line package employing the magneto-resistive effects of thin film
Permalloy. It allows the measurement of magnetic fields or the detection
of metallic parts. The sensor consists of a chip covered with Permalloy
stripes which form a Wheatstone bridge, whose output voltage is
proportional to the magnetic field component Hy. A perpendicular field
Hx is necessary to suppress the hysteresis and this can be provided by
using a small permanent magnet.
FEATURES
•
Output voltage proportional to magnetic field Hy
•
Adjustment of sensitivity and suppression of
hysteresis by the auxiliary magnetic field Hx
effective
E-LINE
•
Magnetic fields vertical to the chip level are not
APPLICATIONS
•
Linear position sensors for process control, door
•
Scalar measurement for compassing
•
Automotive - door switches, engine position and
speed sensing
interlocks, proximity detectors, machine tool sensing
•
Metering of fluids by sensing rotation of impeller
•
Traffic counting and vehicle-type sensing
•
Measurement of current in a conductor without
connection
PINOUT
ORDERING INFORMATION
DEVICE
ZMZ20
BOX
Bulk in box (2,000 components per box)
DEVICE MARKING
•
M20
SIDE VIEW
ISSUE 2 - JANUARY 2004
1
SEMICONDUCTORS
ZMZ20
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Supply voltage
Total power dissipation
Operating temperature range
SYMBOL
V
B
P
TOT
T
amb
LIMIT
12
120
-40 to +150
UNIT
V
mW
°C
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C and Hx=3kA/m unless otherwise stated)
PARAMETER
Bridge resistance
Output voltage range
Open circuit sensitivity
Hysteresis of output voltage
Offset voltage
Operating frequency
Temperature coefficient of offset
voltages
Temperature coefficient of bridge
resistance
Temperature coefficient of open
circuit sensitivity
V
B
=5V
Temperature coefficient of open
circuit sensitivity
I
B
=3mA
TCS
I
-
-0.1
-
%/K
T
amb
= -25 to +125°C
SYMBO
R
br
V
O
/V
B
S
V
OH
/V
B
V
off
/V
B
f
max
TCV
off
TCR
br
TCS
V
MIN.
1.2
16
3.7
-
-1.0
0
-3
0.25
-0.25
TYP.
1.7
20
4.7
-
-
-
-
0.3
-0.3
0.35
-0.35
%/K
%/K
MAX.
2.2
24
5.7
50
+1.0
1
+3
UNIT
k
mV/V
(mV/V)/(kA/m) No disturbing field H
d
allowed
µV/V
mV/V
MHz
(µV/V)/K
T
amb
= -25 to +125°C
T
amb
= -25 to +125°C
T
amb
= -25 to +125°C
Hy = 2kA/m
CONDITIONS
ISSUE 2 - JANUARY 2004
SEMICONDUCTORS
2
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