PD -94064
IRF7726
HEXFET
®
Power MOSFET
l
l
l
l
l
Ultra Low On-Resistance
P-Channel MOSFET
Very Small SOIC Package
Low Profile (< 1.2mm)
Available in Tape & Reel
V
DSS
-30V
R
DS(on)
max
0.026@V
GS
= -10V
0.040@V
GS
= -4.5V
I
D
-
7.0A
-
6.0A
Description
HEXFET
®
Power MOSFETs from International Recti-
fier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the ruggedized device design,
that International Rectifier is well known for, provides
the designer with an extremely efficient and reliable
device for battery and load management.
The new Micro8 package, with half the footprint area
of the standard SO-8, provides the smallest footprint
available in an SOIC outline. This makes the Micro8
an ideal device for applications where printed circuit
board space is at a premium. The low profile (<1.2mm)
of the Micro8 will allow it to fit easily into extremely thin
application environments such as portable electronics
and PCMCIA cards.
S
1
8
7
A
D
D
D
D
S
S
G
2
3
6
4
5
T op V ie w
MICRO-8
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
V
GS
T
J
, T
STG
Drain-Source Voltage
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-30
-7.0
-5.7
-28
1.79
1.14
0.01
±20
-55 to +150
Units
V
A
W
W
W/°C
V
°C
Thermal Resistance
Parameter
R
θJA
Maximum Junction-to-Ambient
Max.
70
Units
°C/W
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1
12/21/00
IRF7726
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Min.
-30
–––
–––
–––
-1.0
10
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.016
–––
–––
–––
–––
–––
–––
–––
–––
46
8.0
8.1
15
25
227
107
2204
341
220
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= -250µA
––– V/°C Reference to 25°C, I
D
= -1mA
0.026
V
GS
= -10V, I
D
= -7.0A
Ω
0.040
V
GS
= -4.5V, I
D
= -6.0A
-2.5
V
V
DS
= V
GS
, I
D
= -250µA
–––
S
V
DS
= -10V, I
D
= -7.0A
-15
V
DS
= -24V, V
GS
= 0V
µA
-25
V
DS
= -24V, V
GS
= 0V, T
J
= 70°C
-100
V
GS
= -20V
nA
100
V
GS
= 20V
69
I
D
= -7.0A
–––
nC
V
DS
= -15V
–––
V
GS
= -10V
23
V
DD
= -15V, V
GS
= -10V
38
I
D
= -1.0A
ns
341
R
G
= 6.0Ω
161
R
D
= 15Ω
–––
V
GS
= 0V
–––
pF
V
DS
= -25V
–––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
35
32
-1.8
A
-28
-1.2
53
48
V
ns
µC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -1.8A, V
GS
= 0V
T
J
= 25°C, I
F
= -1.8A
di/dt = -100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
When mounted on 1 inch square copper board, t < 10 sec.
Pulse width
≤
400µs; duty cycle
≤
2%.
2
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IRF7726
100
VGS
TOP
-10.0V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
BOTTOM -2.5V
100
VGS
-10.0V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
BOTTOM -2.5V
TOP
-ID, Drain-to-Source Current (A)
10
-ID, Drain-to-Source Current (A)
10
1
-2.5V
0.1
-2.5V
1
20µs PULSE WIDTH
Tj = 25°C
0.01
0.1
1
10
100
0.1
0.1
1
20µs PULSE WIDTH
Tj = 150°C
10
100
-VDS, Drain-to-Source Voltage (V)
-VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= -7.0A
-I
D
, Drain-to-Source Current (A)
10
T
J
= 150
°
C
1.5
1.0
1
T
J
= 25
°
C
0.5
0.1
2.0
V DS = -15V
20µs PULSE WIDTH
5.0
3.0
4.0
6.0
0.0
-60 -40 -20
V
GS
= -10V
0
20
40
60
80 100 120 140 160
-V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRF7726
3200
2800
-V
GS
, Gate-to-Source Voltage (V)
C, Capacitance (pF)
2400
2000
1600
1200
800
400
0
1
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
16
14
12
10
8
6
4
2
0
I
D
=
-7.0A
V
DS
=-24V
V
DS
=-15V
C
iss
C
oss
C
rss
10
100
0
10
20
30
40
50
60
-V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
-I
SD
, Reverse Drain Current (A)
T
J
= 25
°
C
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
-I
D
, Drain Current (A)
I
T
J
= 150
°
C
100us
10
1
1ms
0.1
0.0
V
GS
= 0 V
1.5
3.0
4.5
6.0
1
0.1
T
C
= 25 °C
T
J
= 150 °C
Single Pulse
1
10
10ms
100
-V
SD
,Source-to-Drain Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF7726
8.0
V
DS
V
GS
R
D
-I
D
, Drain Current (A)
6.0
D.U.T.
+
4.0
V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
2.0
t
d(on)
t
r
t
d(off)
t
f
V
GS
0.0
25
50
75
100
125
150
10%
T
C
, Case Temperature ( ° C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
90%
V
DS
Fig 10b.
Switching Time Waveforms
100
Thermal Response (Z
thJA
)
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
10
100
1000
P
DM
t
1
t
2
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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R
G
V
DD
5
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