TN2540, TXN625
TYN625, TYN825, TYN1225
Standard 25 A SCRs
Features
A
■
■
■
■
On-state rms current, I
T(RMS)
25 A
Repetitive peak off-state voltage, V
DRM
/V
RRM
600 to 1200 V
Triggering gate current, I
GT
40 mA
Insulated package TO-220AB ins
– Insulating voltage 2500 V rms
– UL1557 certified (file ref. E81734)
K A
G
K
A
G
A
G
K
A
Description
These standard 25 A SCRs are suitable for
general purpose applications.
Using clip assembly technology, they provide a
superior performance in surge current
capabilities.
TXN625RG is packaged in TO-220AB ins.
D
2
PAK
(TN2540-x00G)
TO-220AB
(TYNx25RG)
G
K
A
TO-220AB ins
(TXN625RG)
Table 1.
Device summary
Voltage V
DRM
/V
RRM
Order code
600 V
800 V
1200 V
40 mA
Y
Y
Y
Y
Y
40 mA
40 mA
40 mA
40 mA
40 mA
D
2
PAK
D
2
PAK
TO-220AB ins
TO-220AB
TO-220AB
TO-220AB
Sensitivity I
GT
Y
Package
TN2540-600G-TR
TN2540-800G-TR
TXN625RG
TYN625RG
TYN825RG
TYN1225RG
February 2012
Doc ID 7478 Rev 8
1/10
www.st.com
10
Characteristics
TN2540, TXN625, TYN625, TYN825, TYN1225
1
Table 2.
Symbol
Characteristics
Absolute ratings (limiting values)
Parameter
TO-220AB,
D
2
PAK
T
c
= 100 °C
Value
Unit
I
T(RMS)
I
T(AV)
I
TSM
I
2
t
dI/dt
I
GM
P
G(AV)
T
stg
T
j
V
RGM
On-state rms current (180 °Conduction angle)
25
A
TO-220AB ins T
c
= 83 °C
Average on-state current (180 °Conduction angle)
Non repetitive surge peak on-state current
I
2
t Value for fusing
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, t
r
≤
100 ns
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
Maximum peak reverse gate voltage
t
p
= 8.3 ms
t
p
= 10 ms
t
p
= 10 ms
F = 60 Hz
t
p
= 20 µs
T
c
= 100 °C
T
j
= 25 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
16
314
A
300
450
50
4
1
- 40 to + 150
- 40 to + 125
5
A
2
S
A/µs
A
W
°C
V
A
Table 3.
Symbol
I
GT
V
GT
V
GD
I
H
I
L
dV/dt
V
TM
V
t0
R
d
I
DRM
I
RRM
Electrical Characteristics (T
j
= 25 °C, unless otherwise specified)
Test conditions
MIN.
V
D
= 12 V
R
L
= 33
Ω
MAX.
MAX.
V
D
= V
DRM
I
T
= 500 mA
I
G
= 1.2 x I
GT
V
D
= 67% V
DRM
Gate open
I
TM
= 50 A
tp = 380 µs
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
R
L
= 3.3 kΩ
Gate open
T
j
= 125 °C
MIN.
MAX.
MAX.
MIN.
MAX.
MAX.
MAX.
MAX.
4
mA
Value
4
mA
40
1.3
0.2
50
90
1500
1.6
0.77
14
5
V
V
mA
mA
V/µs
V
V
mΩ
µA
Unit
Threshold voltage
Dynamic resistance
V
DRM
= V
RRM
2/10
Doc ID 7478 Rev 8
TN2540, TXN625, TYN625, TYN825, TYN1225
Table 4.
Symbol
R
th(j-c)
Junction to case (DC)
S
(1)
= 1 cm
2
R
th(j-a)
Junction to ambient (DC)
TO-220AB, TO-220AB ins
Characteristics
Thermal resistances
Parameter
D
2
PAK, TO-220AB
TO-220AB ins
D
2
PAK
Value
1.0
°C/W
2.0
45
°C/W
60
Unit
1. S = Copper surface under tab.
Figure 1.
Maximum average power
dissipation versus average
on-state current
Figure 2.
Average and DC on-state current
versus case temperature
P(W)
22
20
18
16
14
12
10
8
6
4
2
0
0
2
4
6
8
10
12
14
16
360°
I
T(AV)
(A)
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
0
D
2
PAK
DC
TO-220ABins
TO-220AB
α
= 180°
I
T(AV)
(A)
α
T
case
(°C)
25
50
75
100
125
Figure 3.
Average and DC on-state current
versus ambient temperature
Figure 4.
Relative variation of thermal
impedance versus pulse duration
(D
2
PAK, and TO-220AB)
I
T(AV)
(A)
3,5
DC
K=[Z
th
/R
th
]
1.00
3,0
2,5
2,0
1,5
1,0
α
= 180°
Z
th(j-c)
D
2
PAK
TO-220AB
0.10
Z
th(j-a)
TO-220ABins
0,5
T
amb
(°C)
0,0
0
25
50
75
100
125
t
p
(s)
0.01
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
Doc ID 7478 Rev 8
3/10
Characteristics
TN2540, TXN625, TYN625, TYN825, TYN1225
Figure 5.
Relative variation of thermal
impedance versus pulse duration
(TO-220AB ins)
Figure 6.
Relative variation of gate trigger,
holding, and latching currents
versus junction temperature
K=[Z
th
/R
th
]
1,0E+00
I
GT
,I
H
,I
L
[T
j
] / I
GT
,I
H
,I
L
[T
j
=25°C]
2.5
Z
th(j-c)
2.0
1.5
1,0E-01
Z
th(j-a)
I
GT
1.0
I
H
& I
L
0.5
t
p
(s)
1,0E-02
1,0E-03
1,0E-02
1,0E-01
1,0E+00
1,0E+01
1,0E+02
1,0E+03
0.0
-40
-20
0
20
T
j
(°C)
40
60
80
100
120
140
Figure 7.
Surge peak on-state current versus Figure 8.
number of cycles
Non-repetitive surge peak on-state
current, and corresponding values
of I
2
t
T
j
initial = 25°C
I
TSM
(A)
350
300
t
p
=10ms
I
TSM
(A), I
2
t (A
2
s)
2000
1000
I
TSM
250
200
150
Non repetitive
T
j
initial=25 °C
One cycle
I
2
t
dI/dt limitation
100
50
0
1
10
100
1000
Repetitive
T
C
=83°C
Number of cycles
100
0.01
0.10
Sinusoidal pulse width t
p
(ms)
1.00
10.00
Figure 9.
On-state characteristics (maximum Figure 10. Thermal resistance junction to
values)
ambient versus copper surface
under tab (D
2
PAK)
R
th(j-a)
(°C/W)
80
70
60
I
TM
(A)
1000
Epoxy printed circuit board FR4,
copper thickness = 35 µm
100
50
40
30
10
20
T
j
max :
V
to
= 0.77V
R
d
= 14m˜
10
1
0.0
0.5
1.0
1.5
V
TM
(V)
2.0
2.5
3.0
S(cm²)
0
4.0
3.5
0
4
8
12
16
20
24
28
32
36
40
4/10
Doc ID 7478 Rev 8
TN2540, TXN625, TYN625, TYN825, TYN1225
Ordering information schemes
2
Ordering information schemes
Figure 11. TN2540-x00G ordering information scheme
TN 25 40 - 600 G -TR
Standard SCR series
Current
25 = 25 A
Sensitivity
40 = 40 mA
Voltage
600 = 600 V
800 = 800 V
Package
G = D2PAK
Packing mode
-TR = Tape and reel
Figure 12. TXN625RG ordering information scheme
TXN
6
25
RG
Standard SCR series in TO-220AB ins
Voltage
6 = 600 V
8 = 800 V
Current
25 = 25 A
Packing mode
RG = Tube
Figure 13. TYNx25RG ordering information scheme
TYN
6
25
RG
Standard SCR series in TO-220AB
Voltage
6 = 600 V
8 = 800 V
12 =1200 V
Current
25 = 25 A
Packing mode
RG = Tube
Doc ID 7478 Rev 8
5/10
京公网安备 11010802033920号
EEWORLD
