Advance Technical Information
HiPerFAST
TM
IGBT
Optimized for 10-20 KHz hard
switching and up to 100 KHz
resonant switching
IXGH15N120B2D1
IXGT15N120B2D1
V
CES
I
C25
V
CE(sat)
t
fi(typ)
=1200 V
= 30 A
= 3.3 V
= 137 ns
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
M
d
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 90°C
T
C
= 25°C, 1 ms
V
GE
= 15 V, T
VJ
= 125°C, R
G
= 10
Ω
Clamped inductive load
T
C
= 25°C
Maximum Ratings
1200
1200
±20
±30
30
15
60
I
CM
= 40
@ 0.8 V
CES
192
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
Features
International standard packages:
JEDEC TO-247AD & TO-268
IGBT and anti-parallel FRED in one
package
MOS Gate turn-on
- drive simplicity
Fast Recovery Expitaxial Diode (FRED)
- soft recovery with low I
RM
Applications
G = Gate
E = Emitter
C = Collector
TAB = Collector
V
V
V
V
A
A
A
A
G
E
C (TAB)
G
TAB
E
TO-247AD
(IXGH)
C
TO-268
(IXGT)
Mounting torque (TO-247)
1.13/10 Nm/lb.in.
300
260
TO-247AD / TO-268
6/4
°C
°C
g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature
soldering SMD devices for 10s
Weight
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
BV
CES
V
GE(th)
I
CES
I
C
= 250
μA,
V
GE
= 0 V
I
C
= 250
μA,
V
CE
= V
GE
V
CE
= V
CES
V
GE
= 0 V
I
GES
V
CE(sat)
V
CE
= 0 V, V
GE
=
±20
V
I
C
= I
CE90
, V
GE
= 15
Characteristic Values
Min.
Typ.
Max.
1200
2.5
T
J
= 25°C
T
J
= 125°C
5.0
100
3.5
±100
3.3
T
J
= 125°C
2.7
V
V
μA
mA
nA
V
V
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Advantages
Saves space (two devices in one
package)
Easy to mount with 1 screw
(isolated mounting screw hole)
Reduces assembly time and cost
DS99492(09/05)
© 2005 IXYS All rights reserved
IXGH 15N120B2D1
IXGT 15N120B2D1
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
g
fs
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
ri
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCK
Inductive load, T
J
= 25°C
°
I
C
= I
C90
, V
GE
= 15 V
V
CE
= 960 V, R
G
= R
off
= 10
Ω
Remarks: Switching times may
increase for V
CE
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
Inductive load, T
J
= 125°C
°
I
C
= I
C90
, V
GE
= 15 V
V
CE
= 960 V, R
G
= R
off
= 10
Ω
Remarks: Switching times may
increase for V
CE
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
TO-247
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
I
C
= I
C90
; V
CE
= 10 V,
Pulse test, t
≤
300
μs,
duty cycle
≤
2 %
1700
95
38
86
13
26
25
15
165
137
1.4
25
18
0.60
260
305
2.8
0.25
240
255
2.3
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
0.65 K/W
K/W
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
Characteristic Values
Min. Typ. Max.
12
15
S
TO-247 AD Outline
TO-268 Outline
Reverse Diode (FRED)
Symbol
I
F
V
F
I
RM
t
rr
R
thJC
Test Conditions
T
C
= 100°C
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
15
2.8
2.1
6
165
A
V
V
A
ns
1.6 K/W
Dim.
A
A
1
A
2
b
b
2
C
D
E
E
1
e
H
L
L1
L2
L3
L4
Millimeter
Min.
Max.
4.9
5.1
2.7
2.9
.02
.25
1.15
1.45
1.9
2.1
.4
.65
13.80 14.00
15.85 16.05
13.3
13.6
5.45 BSC
18.70 19.10
2.40
2.70
1.20
1.40
1.00
1.15
0.25 BSC
3.80
4.10
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75
.83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
.039 .045
.010 BSC
.150 .161
I
F
= 15 A, V
GE
= 0 V
I
F
= 15 A, V
GE
= 0 V, T
J
= 125°C
I
F
= 25 A; -di
F
/dt = 100 A/μs, V
R
= 100 V
V
GE
= 0 V; T
J
= 100°C
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,850,072
4,835,592
4,931,844
4,881,106
5,034,796
5,017,508
5,063,307
5,049,961
5,237,481
5,187,117
5,381,025
5,486,715
6,404,065B1
6,306,728B1
6,162,665
6,534,343
6,583,505
6,259,123B1 6,306,728B1 6,683,344
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evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications.Read complete Disclaimer Notice at
www.littelfuse.com/disclaimer-electronics.
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