High Voltage IGBT with Diode
IXGH 20N120BD1
IXGT 20N120BD1
Preliminary Data Sheet
V
CES
I
C25
V
CE(sat)
t
fi(typ)
= 1200
= 40
= 3.4
= 160
V
A
V
ns
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C110
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
M
d
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 110°C
T
C
= 25°C, 1 ms
V
GE
= 15 V, T
J
= 125°C, R
G
= 10
Ω
Clamped inductive load
T
C
= 25°C
Maximum Ratings
1200
1200
±20
±30
40
20
100
I
CM
= 80
@0.8 V
CES
190
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
W
°C
°C
°C
TO-247AD
(IXGH)
G
C
TAB
E
TO-268
(IXGT)
G
E
C (TAB)
G = Gate
E = Emitter
C = Collector
TAB = Collector
Mounting torque
(TO-247)
1.13/10 Nm/lb.in.
300
260
°C
°C
g
Features
International standard packages:
JEDEC TO-247AD & TO-268
IGBT and anti-parallel FRED for
resonant power supplies
- Induction heating
- Rice cookers
MOS Gate turn-on
- drive simplicity
Fast Recovery Expitaxial Diode (FRED)
- soft recovery with low I
RM
Advantages
Saves space (two devices in one
package)
Easy to mount with 1 screw
(isolated mounting screw hole)
Reduces assembly time and cost
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature
soldering SMD devices for 10s
Weight
TO-247AD/TO-268
6/4
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
1200
2.5
T
J
= 25°C
T
J
= 125°C
50
±100
T
J
=125°C
2.9
2.8
3.4
5.0
150
V
V
µA
µA
nA
V
V
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 1
µA,
V
GE
= 0 V
= 250
µA,
V
CE
= V
GE
V
CE
= V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
±20
V
I
C
= 20A
,
V
GE
= 15 V
Note 2
© 2003 IXYS All rights reserved
DS98985E(07/03)
IXGH 20N120BD1
IXGT 20N120BD1
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
12
18
1700
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
105
39
72
I
C
= 20A, V
GE
= 15 V, V
CE
= 0.5 V
CES
Inductive load, T
J
= 25°C
°
I
C
= 20 A; V
GE
= 15 V
V
CE
= 0.8 V
CES
; R
G
= R
off
= 10
Ω
Note 1.
12
27
25
15
150
160
2.1
25
18
1.9
270
360
3.5
(TO-247)
0.25
280
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
320 n s
3.5 mJ
ns
ns
mJ
ns
ns
mJ
0.65 K/W
K/W
TO-268 Outline
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
TO-247 AD Outline
g
fs
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
ri
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCK
I
C
= 20A; V
CE
= 10 V,
Note 2.
Inductive load, T
J
= 125°C
°
I
C
= 20A; V
GE
= 15 V
V
CE
= 0.8 V
CES
; R
G
= R
off
= 10
Ω
Note 1
Reverse Diode (FRED)
Symbol
V
F
I
F
I
RM
t
rr
t
rr
R
thJC
Test Conditions
I
F
= 10 A, V
GE
= 0 V
T
C
= 90°C
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
3.3
10
14
120
40
V
A
A
ns
ns
2.5 K/W
Dim.
A
A
1
A
2
b
b
2
C
D
E
E
1
e
H
L
L1
L2
L3
L4
Millimeter
Min.
Max.
4.9
5.1
2.7
2.9
.02
.25
1.15
1.45
1.9
2.1
.4
.65
13.80 14.00
15.85 16.05
13.3
13.6
5.45 BSC
18.70 19.10
2.40
2.70
1.20
1.40
1.00
1.15
0.25 BSC
3.80
4.10
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75
.83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
.039 .045
.010 BSC
.150 .161
I
F
= 10 A; -di
F
/dt = 400 A/µs, V
R
= 600 V
V
GE
= 0 V; T
J
= 125°C
I
F
= 1 A; -di
F
/dt = 100 A/µs; V
R
= 30 V, V
GE
= 0 V
Notes:
1.
2.
Switching times may increase for V
CE
(Clamp) > 0.8 • V
CES
,
higher T
J
or increased R
G
.
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343
IXGH 20N120BD1
IXGT 20N120BD1
Fig. 1. Output Characteristics
@ 25 Deg. C
40
35
30
V
G E
= 15V
13V
11V
1
60
1
40
9V
1
20
Fig. 2. Extended Output Characteristics
@ 25 deg. C
V
G E
= 15V
1
3V
11
V
I
C
- Amperes
25
20
1
5
1
0
5
0
1
1
.5
2
2.5
3
3.5
4
4.5
5
5V
7V
I
C
- Amperes
1
00
80
60
40
20
0
0
2
4
6
8
1
0
1
2
1
4
1
6
1
8
7V
9V
5V
V
CE
- Volts
V
CE
- Volts
Fig. 3. Output Characteristics
@ 125 Deg. C
40
35
30
V
G E
= 15V
13V
11V
9V
25
20
1
5
1
0
5V
5
0
0.5
1
1
.5
2
2.5
3
3.5
4
4.5
5
7V
Fig. 4. Temperature Dependence of V
CE(sat)
1
.4
V
G E
= 15V
1
.3
I
C
= 40A
V
CE (sat)
- Normalized
I
C
- Amperes
1
.2
1
.1
1
I
C
= 20A
0.9
0.8
0.7
-50
-25
0
25
50
75
1
00
1
25
1
50
I
C
= 10A
V
CE
- Volts
T
J
- Degrees Centigrade
Fig. 5. Input Admittance
80
70
60
27
24
21
Fig. 6. Transconductance
T
J
= -40ºC
25ºC
125ºC
G
f s
- Siemens
5
6
7
8
9
1
0
I
C
- Amperes
50
40
30
20
1
0
0
3
4
T
J
= -40ºC
25ºC
125ºC
1
8
1
5
1
2
9
6
3
0
0
1
0
20
30
40
50
60
70
80
V
GE
- Volts
I
C
- Amperes
© 2003 IXYS All rights reserved
IXGH 20N120BD1
IXGT 20N120BD1
Fig. 7. Dependence of E
off
on R
G
1
4
1
2
I
C
= 40A
T
J
= 125ºC
V
G E
= 15V
V
C E
= 960V
1
4
1
2
T
J
= 125ºC
V
G E
= 15V
V
C E
= 960V
Fig. 8. Dependence of E
off
on I
C
E
off
- milliJoules
E
off
- milliJoules
1
0
8
6
4
2
0
0
1
0
8
6
4
2
R
G
= 56 Ohms
R
G
= 5 Ohms
I
C
= 20A
I
C
= 10A
1
0
20
30
40
50
60
1
0
1
5
20
25
30
35
40
R
G
- Ohms
I
C
- Amperes
Fig. 9. Dependence of E
off
on Temperature
1
6
1
4
So lid lines - R
G
= 56 Ohms
Dashed lines - R
G
= 5 Ohms
V
G E
= 15V
V
C E
= 960V
1
5
Fig. 10. Gate Charge
E
off
- milliJoules
1
2
1
0
8
1
2
I
C
= 40A
I
C
= 20A
V
C E
= 600V
I
C
= 20A
I
G
= 10mA
V
G E
- Volts
9
6
4
2
0
0
25
50
75
1
00
1
25
1
50
I
C
= 10A
6
3
0
0
1
0
20
30
40
50
60
70
80
T
J
- Degrees Centigrade
Q
G
- nanoCoulombs
Fig. 11. Reverse-Bias Safe Operating Area
90
80
70
T
J
= 125
º
C
R
G
= 10 Ohms
dV/dT < 10V/ns
Fig. 12. Maximum Transient Thermal Resistance
1
60
50
40
30
20
1
0
0
1
00
300
500
700
900
1 00
1
1
300
R
(th) J C
- (ºC/W)
0.1
1
1
0
1
00
1
000
I
C
- Amperes
V
CE
- Volts
Pulse Width - milliseconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343
IXGH 20N120BD1
IXGT 20N120BD1
70
A
60
I
F
50
Q
r
5
µC
4
T
VJ
= 100°C
V
R
= 600V
I
RM
60
A
50
40
T
VJ
= 100°C
V
R
= 600V
T
VJ
=150°C
40
T
VJ
=100°C
T
VJ
= 25°C
30
20
3
2
I
F
= 60A
I
F
= 30A
I
F
= 15A
30
20
I
F
= 60A
I
F
= 30A
I
F
= 15A
1
10
0
0
1
2
3
V
F
V
4
0
100
10
0
A/µs 1000
-di
F
/dt
0
200
400
600 A/µs 1000
800
-di
F
/dt
Fig. 13. Forward current I
F
versus V
F
Fig. 14. Reverse recovery charge Q
r
versus -di
F
/dt
220
ns
200
Fig. 15. Peak reverse current I
RM
versus -di
F
/dt
120
V
V
FR
80
1.2
2.0
T
VJ
= 100°C
V
R
= 600V
T
VJ
= 100°C
I
F
= 30A
t
fr
µs
t
fr
0.8
1.5
K
f
1.0
t
rr
180
I
RM
160
I
F
= 60A
I
F
= 30A
I
F
= 15A
40
V
FR
0.4
0.5
Q
r
0.0
0
40
80
120 °C 160
T
VJ
140
120
0
200
400
600
-di
F
/dt
800
A/µs 1000
0
0
200
400
0.0
600 A/µs 1000
800
di
F
/dt
Fig. 16. Dynamic parameters Q
r
, I
RM
versus T
VJ
1
K/W
Fig. 17. Recovery time t
rr
versus -di
F
/dt
Fig. 18. Peak forward voltage V
FR
and
t
fr
versus di
F
/dt
Constants for Z
thJC
calculation:
i
1
2
3
R
thi
(K/W)
0.465
0.179
0.256
t
i
(s)
0.0052
0.0003
0.0397
0.1
Z
thJC
0.01
0.001
0.00001
DSEP 30-12A/DSEC 60-12A
0.0001
0.001
0.01
0.1
t
s
1
Fig. 19. Transient thermal resistance junction to case
© 2003 IXYS All rights reserved
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