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IXGT30N60C2D1

Description
Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-268AA, TO-268, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size163KB,6 Pages
ManufacturerIXYS
Environmental Compliance  
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IXGT30N60C2D1 Overview

Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-268AA, TO-268, 3 PIN

IXGT30N60C2D1 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerIXYS
Parts packaging codeTO-268AA
package instructionTO-268, 3 PIN
Contacts4
Reach Compliance Codecompliant
Shell connectionCOLLECTOR
Maximum collector current (IC)70 A
Collector-emitter maximum voltage600 V
ConfigurationSINGLE WITH BUILT-IN DIODE
JEDEC-95 codeTO-268AA
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsMOTOR CONTROL
Transistor component materialsSILICON
Nominal off time (toff)210 ns
Nominal on time (ton)30 ns
HiPerFAST
TM
IGBT
with Diode
C2-Class High Speed IGBTs
IXGH 30N60C2D1 V
CES
IXGT 30N60C2D1 I
C25
V
CE(sat)
t
fi
typ
= 600 V
= 70 A
= 2.7 V
= 32 ns
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C110
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 MΩ
Continuous
Transient
T
C
= 25°C (limited by leads)
T
C
= 110°C
T
C
= 25°C, 1 ms
V
GE
= 15 V, T
VJ
= 125°C, R
G
= 10
Clamped inductive load @
600 V
T
C
= 25°C
Maximum Ratings
600
600
±20
±30
70
30
150
I
CM
= 60
190
-55 ... +150
150
-55 ... +150
300
250
V
V
V
V
A
A
A
A
W
°C
°C
°C
°C
°C
g
g
TO-247 AD (IXGH)
C (TAB)
G
C
E
TO-268 (IXGT)
G
E
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10s
M
d
Weight
Mounting torque (TO-247)
TO-247
TO-268
Test Conditions
Features
Very high frequency IGBT
Square RBSOA
High current handling capability
MOS Gate turn-on
- drive simplicity
Applications
PFC circuits
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
Advantages
High power density
Very fast switching speed for high
frequency aaplications
High power surface mountable
package
1.13/10Nm/lb.in.
6
4
Symbol
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
2.5
T
J
= 25°C
T
J
= 125°C
5.0
200
3
±100
T
J
= 25°C
T
J
= 125°C
2.7
1.8
V
µA
mA
nA
V
V
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
= 250
µA,
V
CE
= V
GE
V
CE
= V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
±20
V
I
C
= 24 A, V
GE
= 15 V
© 2005 IXYS All rights reserved
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