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M29W640GB7AZA6E

Description
Flash, 4MX16, 70ns, PBGA48, 6 X 8 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-48
Categorystorage    storage   
File Size2MB,90 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Environmental Compliance  
Download Datasheet Parametric View All

M29W640GB7AZA6E Overview

Flash, 4MX16, 70ns, PBGA48, 6 X 8 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-48

M29W640GB7AZA6E Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerNumonyx ( Micron )
Parts packaging codeBGA
package instructionTFBGA, BGA48,6X8,32
Contacts48
Reach Compliance Codeunknown
ECCN code3A991.B.1.A
Maximum access time70 ns
Other featuresBOTTOM BOOT BLOCK
Spare memory width8
startup blockBOTTOM
command user interfaceYES
Universal Flash InterfaceYES
Data pollingYES
JESD-30 codeR-PBGA-B48
length8 mm
memory density67108864 bit
Memory IC TypeFLASH
memory width16
Number of functions1
Number of departments/size8,127
Number of terminals48
word count4194304 words
character code4000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize4MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Encapsulate equivalent codeBGA48,6X8,32
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
page size4/8 words
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3/3.3 V
Programming voltage3 V
Certification statusNot Qualified
ready/busyYES
Maximum seat height1.2 mm
Department size8K,64K
Maximum standby current0.0001 A
Maximum slew rate0.01 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitYES
typeNOR TYPE
width6 mm
M29W640GH M29W640GL
M29W640GT M29W640GB
64-Mbit (8 Mbit x8 or 4 Mbit x16, uniform block or boot block)
3 V supply flash memory
Feature
Supply voltage
– V
CC
= 2.7 to 3.6 V for program/erase/read
– V
PP
=12 V for fast program (optional)
Asynchronous random/page read
– Page width: 4 words
– Page access: 25 ns
– Random access: 60 ns, 70 ns, 90 ns
Fast program commands
– 2-word/4-byte program (without V
PP
=12 V)
– 4-word/8-byte program (with V
PP
=12 V)
– 16-word/32-byte write buffer
Programming time
– 10
μs
per byte/word typical
– Chip program time: 10 s (4-word program)
Memory organization
– M29W640GH/L:
128 main blocks, 64 Kbytes each
– M29W640GT/B
Eight 8-Kbyte boot blocks (top or bottom)
127 main blocks, 64 Kbytes each
Program/erase controller
– Embedded byte/word program algorithms
Program/erase suspend and resume
– Read from any block during program
suspend
– Read and program another block during
erase suspend
Table 1.
Device summary
Root part number
M29W640GH: uniform, last block protected by V
PP
/WP
M29W640GL: uniform, first block protected by V
PP
/WP
M29W640GT: top boot blocks
M29W640GB: bottom boot blocks
Device code
227Eh + 220Ch + 2201h
227Eh + 220Ch + 2200h
227Eh + 2210h + 2201h
227Eh + 2210h + 2200h
TSOP48 (NA)
12 x 20 mm
FBGA
TSOP56 (NB)
14 x 20 mm(1)
BGA
FBGA
TFBGA48 (ZA)
6 x 8 mm
FBGA64 (ZS)
11 x 13 mm
TBGA64 (ZF)
10 x 13 mm(1)
1. Packages only available upon request.
RoHS compliant packages
128-word extended memory block
Low power consumption:standby and
automatic standby
Unlock Bypass Program command
– Faster production/batch programming
Common flash interface: 64-bit security code
V
PP
/WP pin for fast program and write protect
Temporary block unprotection mode
100,000 program/erase cycles per block
Electronic signature
– Manufacturer code: 0020h
– Device code (see
Table 1)
Automotive Certified Parts Available
October 2009
Rev 11
1/90
www.numonyx.com
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