UBSR43 datasheet, PDF - EEWORLD Datasheet

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UBSR43: DescriptionSmall Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size34KB，1 Pages; ManufacturerDiodes Incorporated; Environmental Compliance

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UBSR43 Overview

Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89, 3 PIN

UBSR43 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Diodes Incorporated
Parts packaging code	SOT-89
package instruction	SMALL OUTLINE, R-PSSO-F3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	80 V
Configuration	SINGLE
Minimum DC current gain (hFE)	50
JESD-30 code	R-PSSO-F3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	FLAT
Terminal location	SINGLE
Maximum time at peak reflow temperature	10
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
Maximum off time (toff)	1000 ns
Maximum opening time (tons)	250 ns

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SOT89 NPN SILICON PLANAR

MEDIUM POWER TRANSISTOR

ISSUE 4 – MARCH 2001

COMPLEMENTARY TYPES –

✪

BSR33

BSR43

C

PARTMARKING DETAIL –

AR4

E

C

B

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Base Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

I

B

P

TOT

T

j

:T

stg

VALUE

90

80

5

2

1

100

1

-65 to +150

SOT89

UNIT

V

A

mA

W

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Collector-Base

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base Breakdown

Voltage

Collector Cut-Off Current

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

Static Forward

Current Transfer Ratio

Output Capacitance

Input Capacitance

Transition Frequency

Turn-On Time

Turn-Off Time

SYMBOL

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

V

CE(sat)

V

BE(sat)

h

FE

30

100

50

MIN.

90

80

5

100

50

0.25

0.5

1.0

1.2

300

12

90

100

250

1000

pF

MHz

ns

MAX.

UNIT

V

nA

µ

A

V

CONDITIONS.

I

C

=100

µ

A

I

C

=10mA

I

E

=10

µ

A

V

CB

=60V

V

CB

=60V, Tamb =125°C

I

C

=150mA, I

B

=15mA

I

C

=500mA, I

B

=50mA

I

C

=150mA, I

B

=15mA

I

C

=500mA, I

B

=50mA

I

C

=100

µ

A, V

CE

=5V

I

C

=100mA, V

CE

=5V

I

C

=500mA, V

CE

=5V

V

CB

=10V, f=1MHz

V

EB

=0.5V, f=1MHz

I

C

=50mA, V

CE

=10V

f =35MHz

V

CC

=20V, I

C

=100mA

I

B1

=I

B2

=5mA

*

C

obo

C

ibo

f

T

on

T

off

*Measured under pulsed conditions.

For typical characteristics graphs see FMMT493 datasheet.

TBA

UBSR43 Related Products

	UBSR43	BSR43TC
Description	Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89, 3 PIN	Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89, 3 PIN
Parts packaging code	SOT-89	SOT-89
package instruction	SMALL OUTLINE, R-PSSO-F3	SMALL OUTLINE, R-PSSO-F3
Contacts	3	3
Reach Compliance Code	compliant	unknown
ECCN code	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR
Maximum collector current (IC)	1 A	1 A
Collector-emitter maximum voltage	80 V	80 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	50	50
JESD-30 code	R-PSSO-F3	R-PSSO-F3
JESD-609 code	e3	e3
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	NPN	NPN
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	Matte Tin (Sn)	MATTE TIN
Terminal form	FLAT	FLAT
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	10	40
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	100 MHz
Maximum off time (toff)	1000 ns	1000 ns
Maximum opening time (tons)	250 ns	250 ns

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